LESHAN RADIO COMPANY, LTD.
MMBV105GLT–1/2
1
3
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MMBV105GLT1
This device is designed in the surface Mount package for
general frequency control and tuning applications.It provides
solid-state reliability in replacement of mechanical
tuning methods.
• Controlled and Uniform Tuning Ration
Silicon Tuning Diode
3
CATHODE 1
ANODE
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V R30 Vdc
Forward Current I F200 mAdc
Device Dissipation @T A = 25°C P D 225 mW
Derate above 25°C 1.8 mW/°C
Junction Temperature T J+125 °C
Storage Temperature Range T stg –55 to +150 °C
DEVICE MARKING
MMBV105GLT1=M4E
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage V (BR)R 30 — Vdc
( I R=10µAdc)
Reverse Voltage Leakage Current I R— 50 nAdc
( VR =28Vdc)
Min Max Typ Min Max
MMBV105GL T1 1.5 2.8 250 4.0 6.5
Device Type
CT
VR=25Vdc,f =1.0MHz
pF
Q
V R=3.0Vdc
f=50MHz
CR
C3/C25
f=1.0MHz
LESHAN RADIO COMPANY, LTD.
MMBV105GLT–2/2
MMBV105GLT1
C T , DIODE CAP ACITANCE (pF)
Q , FIGURE OF MERIT
1000
100
10 10 100 1000
20
18
16
14
12
10
8.0
6.0
4.0
2.0
00.3 0.5 1.0 2.0 3.0 5.0 10 20 30
f , FREQUENCY ( MHz )
Figure 2. Figure of Merit
V R , REVERSE VOLT AGE (VOLTS)
Figure 1. Diode Capacitance
f
= 1.0MHz
T
A
= 25°C
V
R
=3Vdc
T
A
= 25°C
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96 –75 –50 –25 0 +25 +50 +75 +100 +125
T A , AMBIENT TEMPERA TURE (
°C
)
Figure 3. Diode Capacitance
C
T
, DIODE CAP ACIT ANCE (NORMALIZED)
TYPICAL CHARACTERISTICS
V
R
= 3.0Vdc
f
= 1.0MHz
