FR1A – FR1K 1 of 4 © 2006 Won-Top Electronics
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FR1A – FR1K
1.0A SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY DIODE
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly B
! Low Forward Voltage Drop, High Efficiency
! Surge Overload Rating to 30A Peak D
! Low Power Loss A
! Fast Recovery Time F
! Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
! Case: SMB/DO-214AA, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.093 grams (approx.)
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic Symbol FR1A FR1B FR1D FR1G FR1J FR1K Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR50 100 200 400 600 800 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 V
Average Rectified Output Current @TL = 90°C IO1.0 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method) IFSM 30 A
Forward Voltage @IF = 1.0A VFM 1.30 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 125°C IRM 5.0
300 µA
Reverse Recovery Time (Note 1) trr 150 250 500 nS
Typical J unction Capacitance (Note 2) Cj10 pF
Typical Thermal Resis t ance (Not e 3) RJL 30 °C/W
Operating and Storage Temperature Range Tj, TSTG -50 to +150 °C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse volt age of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
WTE
POWER SEMICONDUCTORS
SMB/DO-214AA
Dim Min Max
A3.30 3.94
B4.06 4.70
C1.91 2.11
D0.152 0.305
E5.08 5.59
F2.13 2.44
G0.051 0.203
H0.76 1.27
All Dimensions in mm