© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C 78 A
IDM TC= 25°C, Pulse Width Limited by TJM 200 A
IATC= 25°C39A
EAS TC= 25°C 1.5 J
PDTC= 25°C 1130 W
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.0 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS= 0V 25 μA
TJ = 125°C 3 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 68 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK78N50P3
IXFX78N50P3
VDSS = 500V
ID25 = 78A
RDS(on) ≤≤
≤≤
≤ 68mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250ns
DS100313(03/11)
Polar3TM HiPerFETTM
Power MOSFET
Features
zDynamic dv/dt Rating
zAvalanche Rated
zFast Intrinsic Diode
zLow QG
zLow RDS(on)
zLow Drain-to-Tab Capacitance
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zUninterrupted Power Supplies
zAC Motor Drives
zHigh Speed Power Switching
Applications
Advance Technical Information
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
G
DS
TO-264 (IXFK)
S
G
D
Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK78N50P3
IXFX78N50P3
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 78 A
ISM Repetitive, Pulse Width Limited by TJM 310 A
VSD IF = IS , VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1.2 μC
IRM 13.0 A
IF = 39A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 40 75 S
Ciss 9.9 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 970 pF
Crss 5.0 pF
RGi Gate Input Resistance 1.1 Ω
td(on) 30 ns
tr 10 ns
td(off) 60 ns
tf 7 ns
Qg(on) 147 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 nC
Qgd 38 nC
RthJC 0.11 °C/W
RthCS 0.15 °C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Terminals: 1 - Gate
2 - Drain
3 - Source
PLUS 247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK78N50P3
IXFX78N50P3
Fi g. 1. O u tp u t C h ar act er i stics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0123456
VDS - V olts
ID - Amperes
VGS
= 10V
7V
5
V
6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25
VDS - Vol ts
ID - Am per es
VGS
= 10V
8V
6
V
5
V
7
V
Fi g . 3. Ou tp u t C h ar ac ter i sti cs @ T
J
= 125º C
0
10
20
30
40
50
60
70
80
0 2 4 6 8 101214
VDS - V olts
ID - Am per es
5
V
6V
4V
VGS
= 10V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 39A Valu e vs.
Junction Tem p erature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Cen tig rade
RDS(on) - Normalized
VGS
= 10V
I D = 78A
I D = 39A
Fig. 5. R
DS(on)
No r mal i z ed to I
D
= 39A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
0 20 40 60 80 100 120 140 160
ID - A mp ere s
RDS(on) - Normalized
VGS
= 10V
TJ = 125ºC
TJ = 25ºC
Fi g. 6. Maximu m D r ai n C u rr en t vs.
Case Temper atu r e
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
ID - Am per es
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK78N50P3
IXFX78N50P3
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Vo lts
I
D
- Amperes
TJ
= 1 25ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 102030405060708090
I
D
- Amp eres
g
f s
- Siemens
TJ
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Vo lts
I
S
- Amperes
TJ
= 125ºC
TJ = 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
VDS
= 250V
I D = 39A
I G = 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1 MHz Ciss
Crss
Coss
Fi g . 12. Fo r war d -B i as Safe Op er ati n g Area
1
10
100
1000
10 100 1,000
V
DS
- V olts
I
D
- Amperes
TJ = 150ºC
TC = 25ºC
Single P ulse
100µs
1ms
RDS(on) Limit
© 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_78N50P3(K8)03-15-11
IXFK78N50P3
IXFX78N50P3
Fi g. 13. Maximu m T r an si en t Th er mal I mpedan ce
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 13. Maximum Transient Ther mal I mpedance
AAAAA
0.2
