BUZ 338 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 338 500 V 13.5 A 0.4 TO-218 AA C67078-S3126-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 C Values Unit A 13.5 Pulsed drain current IDpuls TC = 25 C 54 Avalanche current,limited by Tjmax IAR 13.5 Avalanche energy,periodic limited by Tjmax EAR 18 Avalanche energy, single pulse EAS mJ ID = 13.5 A, VDD = 50 V, RGS = 25 L = 9.18 mH, Tj = 25 C 930 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 W 180 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 0.7 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 07/96 BUZ 338 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 500 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 500 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 500 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 8.5 A Semiconductor Group nA - 2 0.3 0.4 07/96 BUZ 338 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance VDS 2 * ID * RDS(on)max, ID = 8.5 A Input capacitance 8 pF - 2500 3325 - 320 480 - 120 180 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 15 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S gfs td(on) ns VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Rise time - 40 60 - 100 150 - 450 600 - 120 160 tr VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Semiconductor Group 3 07/96 BUZ 338 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 54 V 1.1 1.6 trr ns - 400 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 13.5 - VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 27 A Reverse recovery time ISM TC = 25 C Inverse diode forward voltage A C - 4 6.2 - 07/96 BUZ 338 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 190 14 W A 12 160 ID Ptot 140 11 10 9 120 8 100 7 6 80 5 60 4 3 40 2 20 0 0 20 40 60 80 100 120 C 1 0 0 160 20 40 60 80 100 120 Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 160 TC TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 2 10 0 tp = 6.8s 10 s A K/W ZthJC /I D ID DS 100 s 10 -1 R DS (o n) = V 10 1 1 ms D = 0.50 0.20 10 ms 10 0 10 -2 0.10 0.05 0.02 DC 10 -1 0 10 10 1 10 2 0.01 V 10 10 -3 -7 10 3 VDS Semiconductor Group single pulse -6 -5 10 10 10 -4 10 -3 10 -2 10 -1 tp 5 07/96 s 10 0 BUZ 338 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 30 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 1.3 Ptot = 180Wl j k i hg f A e 26 ID a 4.0 22 b 4.5 RDS (on) d 5.5 18 f 16 1.0 0.8 e 6.0 c c 0.9 c 5.0 20 b 1.1 dVGS [V] 24 a 6.5 0.7 g 7.0 14 0.6 h 7.5 12 10 i 8.0 j 9.0 b e f g h j i k 0.4 k 10.0 8 d 0.5 l 20.0 0.3 6 0.2 V [V] = GS 4 a 2 0 0 a 4.5 4.0 0.1 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 4 8 12 16 20 V 28 0 4 8 12 16 20 A VDS 28 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max VDS2 x ID x RDS(on)max 20 15 A S 13 ID 12 gfs 11 16 14 10 12 9 8 10 7 8 6 5 6 4 4 3 2 1 0 0 2 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 0 0 2 4 6 8 10 A ID 6 07/96 14 BUZ 338 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 8.5 A, VGS = 10 V 1.7 4.6 V 98% 4.0 RDS (on) 1.4 VGS(th) 1.2 3.6 typ 3.2 2.8 1.0 2.4 0.8 2% 2.0 98% 0.6 1.6 typ 1.2 0.4 0.8 0.2 0.4 0.0 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C Typ. capacitances 160 Tj Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A Ciss C IF 10 0 10 1 Coss 10 -1 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2.0 2.4 V VSD VDS Semiconductor Group 10 -1 0.0 7 07/96 3.0 BUZ 338 Avalanche energy EAS = (Tj) parameter: ID = 13.5 A, VDD = 50 V RGS = 25 , L = 9.18 mH Typ. gate charge VGS = (QGate) parameter: ID puls = 20 A 1000 16 mJ EAS V 800 VGS 12 700 10 600 0,2 VDS max 500 0,8 VDS max 8 400 6 300 4 200 2 100 0 20 40 60 80 100 120 C 160 Tj 0 0 20 40 60 80 100 120 140 160 nC 190 QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 600 V 580 V(BR)DSS570 560 550 540 530 520 510 500 490 480 470 460 450 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 338 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96