BAV19W thru BAV21W
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88150 www.vishay.com
14-May-02 1
Small-Signal Diodes
Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Continuous Reverse Voltage BAV19W 100
BAV20W VR150 V
BAV21W 200
Repetitive Peak Reverse Voltage BAV19W 120
BAV20W VRRM 200 V
BAV21W 250
Forward DC Current at Tamb = 25°CI
F250(1) mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load IF(AV) 200(1) mA
at Tamb = 25°C and f ≥50Hz
Repetitive Peak Forward Current IFRM 625(1) mA
at f ≥50Hz, Θ = 180°, Tamb = 25°C
Surge Forward Current at t < 1s, Tj= 25°CI
FSM 1A
Power Dissipation at Tamb = 25°CP
tot 410(1) mW
Thermal Resistance Junction to Ambiant Air RθJA 375(1) °C/W
Junction Temperature Tj150(1) °C
Storage Temperature Range TS–65 to +150(1) °C
Note: (1) Valid provided that leads are kept at ambient temperature.
.022 (0.55)
.112 (2.85)
.152 (3.85)
.067 (1.70)
.053 (1.35)
max.
.010 (0.25)
min.
Cathode Band
.006 (0.15)
max.
Top View
.140 (3.55)
.100 (2.55)
.055 (1.40)
.004 (0.1)
max.
Features
• Silicon Epitaxial Planar Diodes
• For general pur pose
• These diodes are also available in other case
styles including: the DO-35 case with the type
designations BAV19 to BAV21, the MiniMELF
case with the type designations BAV100 to BAV103,
the SOT-23 case with the type designations
BAS19 to BAS21, and the SOD-323 case with
type designations BAV19WS to BAV21WS.
SOD-123
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.01g
Marking BAV19W = A8
Code: BAV20W = A9
BAV21W = AA
Packaging Codes/Options:
D3/10K per 13”reel (8mm tape), 30K/box
D4/3K per 7”reel (8mm tape), 30K/box
Dimensions in inches
and (millimeters)
0.094 (2.40) 0.055 (1.40)
0.055 (1.40)
Mounting Pad Layout
BAV19W thru BAV21W
Vishay Semiconductors
for mer ly General Semiconductor
www.vishay.com Document Number 88150
214-May-02
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
F orward Voltage VFIF = 100mA ——1.00 V
IF = 200mA ——1.25
BAV19W VR = 100V ——100 nA
Leakage Current BAV19W VR = 100V, Tj= 100°C ——15 µA
BAV20W IRVR = 150V ——100 nA
BAV20W VR = 150V, Tj= 100°C ——15 µA
BAV21W VR = 200V ——100 nA
BAV21W VR = 200V, Tj= 100°C——15 µA
Dynamic Forward Resistance rfIF= 10mA —5—Ω
Capacitance Ctot VR= 0, f = 1MHz —1.5 —pF
Reverse Recover y Time trr IF= 30mA, IR = 30mA ——50 ns
Irr = 3mA, RL= 100Ω
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BAV19W thru BAV21W
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88150 www.vishay.com
14-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
Ω
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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