AML2002
No. A1837-1/4
Features
• V
CEO=200V, IC=0.7A
• Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A
• High-speed switching tf=70ns(typ.)@IC=0.3A
• The plastic-covered heat sink eliminates the need for an insulator when mounting the AML2002
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 220 V
Collector-to-Emitter Voltage VCEO 200 V
Emitter-to-Base Voltage VEBO 8V
Collector Current IC0.7 A
Collector Current (Pulse) ICP 2A
Collector Dissipation PC1.5 W
Tc=25
°C10W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55 to +150 °C
Package Dimensions
unit : mm (typ)
7516A-002
Ordering number : ENA1837
1261 1CB TKIM TC-00002562
SANYO Semiconductors
DATA SHEET
AML2002 NPN Epitaxial Planar Silicon Transistor
LED Back Light
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : TO-126ML
• JEITA, JEDEC : TO-126
• Minimum Packing Quantity : 200 pcs./bag
Marking Electrical Connection
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
0.8
0.75
2.4 4.8
0.8 0.7
8.0 4.0
1.0 1.0
3.6
1.4
1.6
1.5
1.7 7.5
3.0
15.5 11.0
3.3
3.0
123
LOT No.
L2002 3
1
2
AML2002
No. A1837-2/4
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=100V, IE=0A 1 μA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 1 μA
DC Current Gain hFE VCE=5V, IC=100mA 200 560
Gain-Bandwidth Product fTVCE=10V, IC=100mA 120 MHz
Output Capacitance Cob VCB=10V, f=1MHz 9 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=0.35A, IB=35mA 125 220 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=0.35A, IB=35mA 0.82 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 220 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞200 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 8 V
Turn-On Time ton See specifi ed Test Circuit. 50 ns
Storage Time tstg See specifi ed Test Circuit. 2 μs
Fall Time tfSee specifi ed Test Circuit. 70 ns
Switching Time Test Circuit
RB
VCC=100V
IC=10IB1= --10IB2=0.3A
+
50Ω
INPUT
OUTPUT
RL
820μF
PW=50μsIB1
D.C.≤1% IB2
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IC -- VCE
Collector Current, IC -- A
hFE -- IC
IC -- VBE
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A
DC Current Gain, hFE
IT15964
0 1.00.20.1 0.40.3 0.60.5 0.8 0.90.7
0
0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.8
0.9
1.0
IB=0mA
2mA
4mA 6mA 8mA
10mA
20mA
30mA
40mA
50mA
60mA
80mA
IT15965
0101 45678932
0
0.02
0.14
0.12
0.10
0.08
0.06
0.04
0.16
0.18
0.20
IB=0μA
200μA
100μA
300μA
400μA
500μA
100mA
600μA
1mA
900μA800μA
700μA
IT15967
2
10
100
1.0
3
5
7
2
3
5
7
1000
2
3
5
7
0.01 325
0.1 1.0
73257
Ta=75°C
25°C
VCE=5V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00
IT15966
0.40.30.1 0.2 0.90.80.70.60.5 1.0
VCE=5V
25°C
--25
°
C
Ta=75°C
--25°C
AML2002
No. A1837-3/4
Cob -- VCB
VBE(sat) -- IC
VCE(sat) -- IC
VCE(sat) -- IC
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
fT -- IC
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
A S O
IT15956
10
1.0
3
5
7
2
100
3
5
7
2
100
3
5
7
2
0.01 3257 3257
1.00.1
Ta=25°C
VCE=5.0V
0.5V
2.0V
1.0V
0.1 1.0
23 57 2 10 100
357 2357
5
3
2
7
10
5
7
100
1.0
3
2
IT15969
0.10.01 75327532 1.0
IT15970
1.0
0.1
2
3
5
7
IT15972
0.10.01 7532 1.0
7532
0.1
1.0
0.01
2
3
5
7
2
3
5
7
Ta=75
°
C
25°C
--25°C
IC / IB=10
IC / IB=10
Ta= --25°C
75°C
IT15968
0.01 0.1
23 57 23 5 1.0
7
5
3
10
2
7
100
1000
7
5
3
2
VCE=10V
IT15971
0.10.01 7532 1.0
7532
0.1
10
0.01
2
3
5
7
1.0
2
3
5
7
2
3
5
7
Ta=75
°
C
25°C
--25°C
IC / IB=20
f=1MHz
25
°
C
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
A S O
IT16012
0.001
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
10
1.0
1.0
0.01 2
2537
0.1 2537 1000
2537
10 2537
100
537
ICP=2A
IC=0.7A
DC operation
100ms
100
μ
s
1ms
10ms
<10μs
500μs
IT16013
0.001
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
10
1.0
1.0
0.01 2
2537
0.1 2537 1000
2537
10 2537
100
537
ICP=2A
IC=0.7A
DC operation
100
μ
s
1ms
<10μs
500
μ
s
100ms 10ms
Ta=25°C
Single pulse Tc=25°C
Single pulse
AML2002
No. A1837-4/4PS
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
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the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
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Any and all information described or contained herein are subject to change without notice due to
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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Upon using the technical information or products described herein, neither warranty nor license shall be
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This catalog provides information as of January, 2011. Specifi cations and information herein are subject
to change without notice.
PC -- Tc
Collector Dissipation, PC -- W
Case Temperature, Tc -- °C
0
12
6
8
10
4
2
2507550 100 150125 175
IT15975
PC -- Ta
Collector Dissipation, PC -- W
Ambient Temperature, Ta -- °CIT15974
250 50 75 100 150125 175
0
0.6
0.4
0.2
0.8
1.0
1.2
1.4
1.5
1.6
