VS-50SQ...G Series, VS-50SQ...G-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 19-Sep-11 1Document Number: 93356
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Schottky Rectifier, 5 A
FEATURES
175 °C TJ operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and
long term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified for commercial level
Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-50SQ...G... axial leaded Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package DO-204AR
IF(AV) 5 A
VR60 V, 80 V, 100 V
VF at IF0.52 V
IRM max. 7.0 mA at 125 °C
TJ max. 175 °C
Diode variation Single die
EAS 7.5 mJ
Cathode Anode
DO-204AR
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 5A
VRRM Range 60 to 100 V
IFSM tp = 5 μs sine 1900 A
VF5 Apk, TJ = 125 °C 0.52 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-50SQ060G
VS-50SQ060G-M3
VS-50SQ080G
VS-50SQ080G-M3
VS-50SQ100G
VS-50SQ100G-M3 UNITS
Maximum DC reverse voltage VR
60 80 100 V
Maximum working peak
reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 119 °C, rectangular waveform 5
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
1900
10 ms sine or 6 ms rect. pulse 290
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, 46 μs square pulse 7.5 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by, TJ maximum VA = 1.5 x VR typical 1.0 A
VS-50SQ...G Series, VS-50SQ...G-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 19-Sep-11 2Document Number: 93356
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
5 A TJ = 25 °C 0.66
V
10 A 0.77
5 A TJ = 125 °C 0.52
10 A 0.62
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.15 mA
TJ = 125 °C 7
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 500 pF
Typical series inductance LSMeasured lead to lead 5 mm from body 10 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to lead RthJL
DC operation; see fig. 4
1/8" lead length 8.0
°C/W
Typical thermal resistance,
junction to air RthJA 44
Approximate weight 1.4 g
0.049 oz.
Marking device Case style DO-204AR (JEDEC)
50SQ060G
50SQ080G
50SQ100G
VS-50SQ...G Series, VS-50SQ...G-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 19-Sep-11 3Document Number: 93356
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJL Characteristics
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
93356_01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
T
J
= 175 °C
T
J
= 125 °C
T = 2 5 ° C
J
0.0001
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100
TJ = 175° C
TJ = 150° C
TJ = 125° C
TJ = 100° C
TJ = 75° C
TJ = 25° C
TJ = 50° C
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
93356_02
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
93356_03
100
1000
0 20 40 60 80 100
TJ = 25 °C
= 1/8 inch
Single pulse
(thermal resistance)
PDM
t2
t1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
D = 0.01
0.01
0.1
10
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
93356_04
VS-50SQ...G Series, VS-50SQ...G-M3 Series
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Revision: 19-Sep-11 4Document Number: 93356
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
93356_05
145
150
155
160
165
170
175
0 2 4 6 8
DC
= 1/8 inch
RthJL (DC) = 8.0 °C/W
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
93356_06
0
0.5
1
1.5
2
2.5
3
3.5
012345678
DC
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS Limit
100
10 100
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
1000
93356_07
1000 10 000
10 000
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-50SQ...G Series, VS-50SQ...G-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 19-Sep-11 5Document Number: 93356
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-50SQ060G 300 300 Bulk
VS-50SQ060GTR 1500 1500 Tape and reel
VS-50SQ060G-M3 300 300 Bulk
VS-50SQ060GTR-M3 1500 1500 Tape and reel
VS-50SQ080G 300 300 Bulk
VS-50SQ080GTR 1500 1500 Tape and reel
VS-50SQ080G-M3 300 300 Bulk
VS-50SQ080GTR-M3 1500 1500 Tape and reel
VS-50SQ100G 300 300 Bulk
VS-50SQ100GTR 1500 1500 Tape and reel
VS-50SQ100G-M3 300 300 Bulk
VS-50SQ100GTR-M3 1500 1500 Tape and reel
1
- Current rating (5 A)
2
- S = DO-204AR package
3
- Q = Schottky Q.. series
4
- Voltage ratings5
- G = Schottky generation
6
- None = Bulk package
TR = Tape and reel package
060 = 60 V
080 = 80 V
100 = 100 V
Device code
6
243 5 7
50 S Q 100 G TRVS-
1
-M3
8
- Vishay Semiconductors product
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
- Environmental digit
7
8
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95243
Part marking information www.vishay.com/doc?95325
Packaging information www.vishay.com/doc?95338
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 1Document Number: 95243
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Axial DO-204AR
DIMENSIONS in millimeters (inches)
6.35 (0.250)
6.10 (0.240)
9.52 (0.375)
9.27 (0.365)
DIA.
6.35 (0.250)
6.10 (0.240)
9.52 (0.375)
9.27 (0.365)
DIA.
1.32 (0.052)
1.22 (0.048)
(2 places)
27.94 (1.10) MIN.
(2 places)
27.94 (1.10) MIN.
(2 places)
2.54 (0.100) MAX.
Flash (2 places)
DIA.
1.32 (0.052)
1.22 (0.048)
(2 places)
DIA.
Cathode band
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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