Preliminary Datasheet RJK0601DPN-E0 R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 110 A, 3.1 m Features High speed switching Low drive current Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain 1G 1 2 3 S 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID Note1 ID (pulse) IDR Note2 IAP Note2 EAS Pch Note3 ch-c Tch Tstg Ratings 60 20 110 330 110 55 227 200 0.63 150 -55 to +150 Unit V V A A A A mJ W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at L = 100 H, Tch = 25C, Rg 50, 3. Tc = 25C R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 Page 1 of 6 RJK0601DPN-E0 Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) Min 60 -- -- 2.0 -- Typ -- -- -- -- 2.5 Max -- 0.1 1 4.0 3.1 Unit V A A V m Test conditions ID = 10mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 55 A, VGS = 10 V Note4 |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) -- -- -- -- -- -- -- -- -- -- -- 120 10000 2150 500 1.6 141 50 25 53 27 100 -- -- -- -- -- -- -- -- -- -- -- S pF pF pF nC nC nC ns ns ns ID = 55 A, VD = 10 V Note4 tf VDF trr -- -- -- 29 0.85 65 -- 1.5 -- ns V ns VDS = 10 V VGS = 0 f = 1 MHz VDD= 25 V VGS = 10 V, ID = 55 A VGS = 10 V ID = 55 A VDD 30 V Rg = 4.7 IF = 110 A, VGS = 0 Note4 IF = 110 A, VGS = 0 diF/dt = 100 A/s Notes: 4. Pulse test R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 Page 2 of 6 RJK0601DPN-E0 Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 150 100 50 10 0 100 s DC Operation 10 PW = 10 ms Operation in this 1 area is limited by RDS(on) 0.1 Tc = 25C 1 shot pulse 0 50 100 150 0.01 0.1 200 Case Temperature Tc (C) 10 100 Typical Transfer Characteristics 100 100 6V VDS = 10 V Pulse Test 10 V 60 5V 40 20 Drain Current ID (A) 5.4 V 7V 80 1 Drain to Source Voltage VDS (V) Typical Output Characteristics Drain Current ID (A) s m Drain Current ID (A) 200 10 s 1 Channel Dissipation Pch (W) 250 VGS = 4.6 V 80 60 Tc = 75C 40 25C 20 -25C Pulse Test 0.2 0.4 0.6 0.8 0 1.0 2 4 6 8 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source on State Resistance vs. Drain Current 300 Pulse Test 250 200 150 50 A 100 25 A 50 0 ID = 10 A 4 8 12 16 20 Gate to Source Voltage VGS (V) R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 Drain to Source on State Resistance RDS(on) (m) Drain to Source Saturation Voltage VDS(on) (mV) 0 100 VGS = 10 V Pulse Test 10 1 0.1 1 10 100 1000 Drain Current ID (A) Page 3 of 6 RJK0601DPN-E0 Preliminary Typical Capacitance vs. Drain to Source Voltage 10 100000 Capacitance C (pF) Pulse Test VDS = 10 V 8 ID = 50 A 6 4 2 0 -25 25 50 75 Ciss 10000 Coss 1000 Crss 1 10 100 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage 100 ID = 55 A 16 VDD = 10 V 25 V 50 V 12 8 4 0 VGS = 0 f = 1 MHz 100 0.1 100 125 150 IDR (A) 20 0 Reverse Drain Current Gate to Source Voltage VGS (V) Drain to Source on State Resistance RDS(on) (m) Drain to Source on State Resistance vs. Temperature 40 80 120 160 200 Pulse Test 80 10 V 60 VGS = 0 V 40 20 0 0.5 1.0 1.5 2.0 Source to Drain Voltage VSD (V) Gate Charge Qg (nC) Maximum Avalanche Energy vs. Channel Temperature Derating Avalanche Energy EAS (mJ) 250 IAP = 55 A VDD = 20 V duty < 0.1% Rg 50 200 150 100 50 0 25 50 75 100 125 150 Channel Temperature Tch (C) R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 Page 4 of 6 RJK0601DPN-E0 Preliminary Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 10.0 3 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 0.63C/W, Tc = 25C 0.1 0.05 0.02 0.01 0.03 PDM D= PW T PW 1shot pulse T 0.01 100 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL 25 Vin 10 V Vin Vout VDD = 30 V 10% 90% td(on) R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 10% tr 10% 90% td(off) tf Page 5 of 6 RJK0601DPN-E0 Preliminary Package Dimensions RENESAS Code PRSS0004AG-A Previous Code TO-220ABS MASS[Typ.] 2.1g Unit: mm 4.5 0.2 9.9 0.2 + 0.10 3.6 0.2 (3.00) 9.2 0.2 15.7 0.2 1.30 - 0.05 1.62 Max 0.80 0.10 13.08 0.20 JEITA Package Code SC-46 2.8 0.1 Package Name TO-220AB 2.6 Max 2.54 2.54 + 0.10 0.50 - 0.05 10.0 0.2 Ordering Information Orderable Part Number RJK0601DPN-E0-T2 Note: Quantity 50 pcs Shipping Container Magazine (Tube) The symbol of 2nd "-" is occasionally presented as "#". R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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