R07DS0652EJ0200 Rev.2.00 Page 1 of 6
Aug 24, 2012
Preliminary Datasheet
RJK0601DPN-E0
N-Channel MOS FET
60 V, 110 A, 3.1 m
Features
High speed switching
Low drive current
Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V)
Package TO-220AB
Outline
1. Gate
2. Drain
3. Sourc
e
4. Drain
(Package name:
TO-220AB)
123
4
RENESAS Package code:
PRSS0004AG-A
D
2, 4
G1
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 110 A
Drain peak current ID (pulse) Note1 330 A
Body-drain diode reverse drain current IDR 110 A
Avalanche current IAP Note2 55 A
Avalanche energy EAS Note2 227 mJ
Channel dissipation Pch Note3 200 W
Channel to case thermal impedanc e ch-c 0.63 C/W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L = 100 H, Tch = 25C, Rg 50,
3. T c = 25C
R07DS0652EJ0200
Rev.2.00
Aug 24, 2012
RJK0601DPN-E0 Preliminary
R07DS0652EJ0200 Rev.2.00 Page 2 of 6
Aug 24, 2012
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 A VGS = 20 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 A VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance RDS(on) — 2.5 3.1 m I
D = 55 A, VGS = 10 V Note4
Forward transfer admittance |yfs| — 120 — S ID = 55 A, VD = 10 V Note4
Input capacitance Ciss — 10000 — pF
Output capacitance Coss — 2150 — pF
Reverse transfer capacitance Crss — 500 — pF
VDS = 10 V
VGS = 0
f = 1 MHz
Gate Resistance Rg — 1.6 —
Total gate charge Qg — 141 — nC
Gate to source charge Qgs — 50 — nC
Gate to drain charge Qgd — 25 — nC
VDD= 25 V
VGS = 10 V,
ID = 55 A
Turn-on delay time td(on) — 53 — ns
Rise time tr — 27 — ns
Turn-off delay time td(off) — 100 — ns
Fall time tf — 29 — ns
VGS = 10 V
ID = 55 A
VDD 30 V
Rg = 4.7
Body-drain diode forward voltage VDF — 0.85 1.5 V IF = 110 A, VGS = 0 Note4
Body-drain diode reverse recovery time trr — 65 — ns
IF = 110 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
RJK0601DPN-E0 Preliminary
R07DS0652EJ0200 Rev.2.00 Page 3 of 6
Aug 24, 2012
Main Characteristics
250
200
150
100
50
050 100 150 200
100
80
60
40
20
00.2 0.4 0.6 0.8 1.0
100
80
60
40
20
02468
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
150
100
0
50
4 8 12 16 20 1 10 100 1000
1
10
100
0.1
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS(on)
(mΩ)
Drain to Source on State Resistance
vs. Drain Current
300
250
200
V
GS
= 10 V
Pulse Test
100
10
1
0.1 1 10 100
0.01
0.1
1000
Drain to Source Voltage VDS (V)
Drain Current I
D
(A)
Maximum Safe Operation Area
V
GS
= 4.6 V
Pulse Test
5 V
6 V
7 V 5.4 V
10 V
Tc = 75°C
25°C
−25°C
V
DS
= 10 V
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
I
D
= 10 A
Pulse Test
50 A
25 A
Tc = 25°C
1 shot pulse
Operation in this
area is limited by
R
DS(on)
PW = 10 ms
10
μ
s
100 μs
1 ms
DC Operation
RJK0601DPN-E0 Preliminary
R07DS0652EJ0200 Rev.2.00 Page 4 of 6
Aug 24, 2012
10
8
6
4
2
−25 0 25 50 75 100 125 150
0
Case Temperature Tc (°C)
Drain to Source on State Resistance
R
DS(on)
(mΩ)
Drain to Source on State Resistance
vs. Temperature
0.1 101 100
100000
10000
1000
100
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Pulse Test
V
DS
= 10 V
I
D
= 50 A
00.5 1.0 1.5 2.0
100
40
V
GS
= 0 V
10 V
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
Pulse Test
100
50
150
250
200
25 50 100 15075 125
0
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Energy E
AS
(mJ)
I
AP
= 55 A
V
DD
= 20 V
duty < 0.1%
Rg ≥ 50 Ω
20
60
80
0
20
16
12
8
4
40 80 120 160 200
Gate Charge Qg (nC)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
V
DD
= 10 V
25 V
50 V
I
D
= 55 A
RJK0601DPN-E0 Preliminary
R07DS0652EJ0200 Rev.2.00 Page 5 of 6
Aug 24, 2012
Vin Monitor
D.U.T.
Vin
10 V
RL
VDD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
25 Ω
90%
10%
tf
Switching Time Test Circuit Waveform
0.3
0.1
0.03
0.01
10.0
1
3
100 μ1 m 10 m 100 m 1 10
Pulse Width PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
DM
P
PW
T
D = PW
T
θch – c(t) = γs (t) • θch – c
θch – c = 0.63°C/W, Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
RJK0601DPN-E0 Preliminary
R07DS0652EJ0200 Rev.2.00 Page 6 of 6
Aug 24, 2012
Package Dimensions
Unit: mm
SC-46 2.1g
MASS[Typ.]
TO-220ABSPRSS0004AG-A
RENESAS CodeJEITA Package Code Previous Code
Package Name
TO-220AB
9.9 ± 0.2
4.5 ± 0.2
2.8 ± 0.1
15.7 ± 0.2
9.2 ± 0.2
13.08 ± 0.20
0.80 ± 0.10
2.6 Max
1.62 Max
10.0 ± 0.2
2.54 2.54
(3.00)
φ3.6 ± 0.2 1.30
+ 0.10
– 0.05
0.50
+ 0.10
– 0.05
Ordering Information
Orderable Part Number Quantity Shipping Container
RJK0601DPN-E0-T2 50 pcs Magazine (Tube)
Note: The symbol of 2nd "-" is occasiona lly presented as "#".
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