ZXMP3A16GTA - DIODES INC - Datasheet.Directory

ZXMP3A16G

Document Number DS33575 Rev. 6 - 2

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30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(on)

max

I

D

max

T

A

= +25°C

(Note 6)

-30V

45mΩ @ V

GS

= -10V -7.5A

70mΩ @ V

GS

= -4.5V -5.9A

Description and Applications

This MOSFET is designed to minimize the on-state resistance and yet

maintain superior switching performance, making it ideal for high-

efficiency power management applications.

• Motor Control

• DC-DC Converters

• Power Management Functions

• Relay and Solenoid Driving

Features and Benefits

• Low On-Resistance

• Fast Switching Speed

• Low Threshold

• Low Gate Drive

• Lead Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.112 grams (Approximate)

Ordering Information

(Note 4)

Product

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

ZXMP3A16GTA ZXMP3A16 7 12 1,000

ZXMP3A16GTC ZXMP3A16 13 12 4,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds. All applicable RoHS

exemptions applied. Further information about Diodes Inc.’s “Green” Policy can be found on our website.

Marking Information

Equivalent Circuit

D

S

G

Top View

SOT223

Pin Out - Top View

ZXMP3A16 = Product Type Marking Code

YWW = Date Code Marking

Y or Y = Last Digit of Year (ex: 5= 2015)

WW or WW = Week Code (01~53)

SOT223

4310

YWW

ZVN

ZXM

P

3A16

Green

ZXMP3A16G

Document Number DS33575 Rev. 6 - 2

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Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage V

DSS

-30 V

Gate-Source Voltage V

GS

±20 V

Continuous Drain Current V

GS

= 10V

(Note 6)

I

D

-7.5

A

T

A

= +70°C (Note 6) -6.0

(Note 5) -5.4

Pulsed Drain Current V

GS

= 10V (Note 7) I

DM

-24.9 A

Continuous Source Current (Body diode) (Note 6) I

S

-3.2 A

Pulsed Source Current (Body diode) (Note 7) I

SM

-24.9 A

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Note 5)

P

D

2.0

16 W

mW/°C

(Note 6) 3.9

31

Thermal Resistance, Junction to Ambient (Note 5) R

θJA

62.5

°C/W

(Note 6) 32.2

Thermal Resistance, Junction to Lead (Note 8) R

θJL

8.51

Operating and Storage Temperature Range T

J

, T

STG

-55 to 150 °C

Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

6. Same as Note (5), except the device is measured at t ≤ 10 sec.

7. Same as Note (5), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

8. Thermal resistance from junction to solder-point (at the end of the drain lead).

ZXMP3A16G

Document Number DS33575 Rev. 6 - 2

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Thermal Characteristics

1 10

10m

100m

1

10

Single Pulse

T

amb

=25°C

R

DS(on)

Limited

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

-I

D

Drain Current (A)

-V

DS

Drain-Source Voltage (V)

0 20 40 60 80 100 120 140 160

0.0

0.4

0.8

1.2

1.6

2.0

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

0

10

20

30

40

50

60

70

T

amb

=25°C

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

100µ 1m 10m 100m 1 10 100 1k

1

10

100

Single Pulse

T

amb

=25°C

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

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Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Charact

eristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BV

DSS

-30   V I

D

= -250µA, V

GS

= 0V

Zero Gate Voltage Drain Current I

DSS

  -1 µA V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage I

GSS

  ±100 nA V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS

Gate Threshold Voltage V

GS(th)

-1.0   V I

D

= -250µA, V

DS

= V

GS

Static Drain-Source On-Resistance (Note 9) R

DS (ON)

  45 mΩ V

GS

= -10V, I

D

= -4.2A

70 V

GS

= -4.5V, I

D

= -3.4A

Forward Transconductance (Notes 9 & 10) g

fs

 9.2  S V

DS

= -15V, I

D

= -4.2A

Diode Forward Voltage (Note 9) V

SD

 -0.85 -0.95 V I

S

= -3.6A, V

GS

= 0V, T

J

= +25°C

Reverse Recovery Time (Note 10) t

rr

21.7  ns I

F

= -2A, di/dt = 100A/µs,

T

J

= +25°C

Reverse Rsecovery Charge (Note 10) Q

rr

 16.1  nC

DYNAMIC CHARACTERISTICS (

Note

10

)

Input Capacitance C

iss

 1,022  pF V

DS

= -15V, V

GS

= 0V

f = 1MHz

Output Capacitance C

oss

 267  pF

Reverse Transfer Capacitance C

rss

 229  pF

Total Gate Charge (Note 11) Q

g

 17.2  nC V

GS

= -5V

V

DS

= -15V

I

D

= -4.2A

Total Gate Charge (Note 11) Q

g

 29.6  nC

V

GS

= -10V

Gate-Source Charge (Note 11) Q

gs

 2.8  nC

Gate-Drain Charge (Note 11) Q

gd

 8.6  nC

Turn-On Delay Time (Note 11) t

D(on)

 3.8  ns

V

DD

= -15V, V

GS

= -10V

I

D

= -1A, R

G

≅ 6.0Ω

Turn-On Rise Time (Note 11) t

r

 6.5  ns

Turn-Off Delay Time (Note 11) t

D(off)

 37.1  ns

Turn-Off Fall Time (Note 11) t

f

 21.4  ns

Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.

10 . For design aid only, not subject to production testing.

11 . Switching characteristics are independent of operating junction temperatures.

ZXMP3A16G

Document Number DS33575 Rev. 6 - 2

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Typical Characteristics

0.1 1 10

0.1

1

10

0.1 1 10

0.01

0.1

1

10

1.5 2.0 2.5 3.0 3.5

0.1

1

10

-50 0 50 100 150

0.6

0.8

1.0

1.2

1.4

1.6

0.1 1 10

0.1

1

0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

5V10V 4V 3.5V

-V

GS

2.5V

2V

3V

Output Characteristics

T = 25°C

-V

GS

-I

D

Drain Current (A)

-V

DS

Drain-Source Voltage (V)

3.5V

3V

2V

1.5V

10V

2.5V

Output Characteristics

T = 150°C

-I

D

Drain Current (A)

-V

DS

Drain-Source Voltage (V)

Typical Transfer Characteristics

-V

DS

= 10V

T = 25°C

T = 150°C

-I

D

Drain Current (A)

-V

GS

Gate-Source Voltage (V)

Normalised Curves v Temperature

R

DS(on)

V

GS

= -10V

I

D

= -5.4A

V

GS(th)

V

GS

= V

DS

I

D

= -250uA

Normalised R

DS(on)

and V

GS(th)

Tj Junction Temperature (°C)

5V

10V

3V

2V

4V

3.5V

2.5V

On-Resistance v Drain Current

T = 25°C

-V

GS

R

DS(on)

Drain-Source On-Resistance (Ω)

-I

D

Drain Current (A)

T = 150°C T = 25°C

Source-Drain Diode Forward Voltage

-V

SD

Source-Drain Voltage (V)

-I

SD

Reverse Drain Current (A)

ZXMP3A16G

Document Number DS33575 Rev. 6 - 2

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A Product Line of

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ZXMP3A16G

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Typical Characteristics

(continued)

0.1 1 10

0

200

400

600

800

1000

1200

1400

1600

1800

C

RSS

C

OSS

C

ISS

V

GS

= 0V

f = 1MHz

C Capacitance (pF)

-V

DS

- Drain - Source Voltage (V)

0 5 10 15 20 25 30

0

2

4

6

8

10

I

D

= -4.2A

V

DS

= -15V

Gate-Source Voltage v Gate Charge

Capacitance v Drain-Source Voltage

Q - Charge (nC)

-V

GS

Gate-Source Voltage (V)

Test Circuits

ZXMP3A16G

Document Number DS33575 Rev. 6 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

A1A

7

°

7°

D

b

e

e1

b1 C

E1

L

0°-10°

Q

E

0.25

Seating

Plane

Gauge

Plane

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X1

Y1

Y

XC

C1 Y2

SOT223

Dim

Min

Max

Typ

A

1.55 1.65 1.60

A1

0.010

0.15 0.05

b

0.60 0.80 0.70

b1

2.90 3.10 3.00

C

0.20 0.30 0.25

D

6.45 6.55 6.50

E

3.45 3.55 3.50

E1

6.90 7.10 7.00

e

- - 4.60

e1

- - 2.30

L

0.85 1.05 0.95

Q

0.84 0.94 0.89

All Dimensions in mm

Dimensions

Value (in mm)

C

2.30

C1

6.40

X

1.20

X1

3.30

Y

1.60

Y1

1.60

Y2

8.00

ZXMP3A16G

Document Number DS33575 Rev. 6 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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