AP0603GH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic G RoHS Compliant & Halogen-Free BVDSS 30V RDS(ON) 6m ID 72A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current 72 A ID@TC=100 Continuous Drain Current 45 A 288 A 50 W 2 W 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 3 PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice Value Units 2.5 /W 62.5 /W 1 201006213 AP0603GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=40A - - 6 m VGS=4.5V, ID=30A - - 11 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=30A - 50 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=30A - 10 16 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 3 nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 nC VDS=15V - 7.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=30A - 75 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 17 - ns tf Fall Time RD=0.5 - 5 - ns Ciss Input Capacitance VGS=0V - 980 1570 pF Coss Output Capacitance VDS=25V - 325 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 1.4 2.1 Min. Typ. IS=40A, VGS=0V - - 1.2 V IS=10A, VGS=0V, - 28 - ns dI/dt=100A/s - 23 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP0603GH-HF 100 200 10V 7.0 V 6.0V ID , Drain Current (A) 160 o T C =150 C 5.0 V 120 80 V G = 4.0 V 40 60 V G =4.0V 40 20 0 0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 V DS , Drain-to-Source Voltage (V) 1.0 2.0 3.0 4.0 5.0 6.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 12 I D =30A I D =40A V G =10V Normalized RDS(ON) T C =25 o C 10 RDS(ON) (m) 10V 7 .0V 6.0V 5.0 V 80 ID , Drain Current (A) o T C =25 C 8 1.6 1.2 0.8 6 0.4 4 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 Normalized VGS(th) (V) 30 IS(A) 20 o T j =150 C T j =25 o C 10 1.2 0.8 0.4 0 0.0 0 0.4 0.8 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP0603GH-HF 8 f=1.0MHz 1600 V DS =15V V DS =18V V DS =24V 6 1200 C (pF) VGS , Gate to Source Voltage (V) I D =30A 4 C iss 800 2 400 0 0 C oss C rss 0 4 8 12 1 16 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 1000 ID (A) 100 100us 10 1ms T C =25 o C Single Pulse 10ms 100ms DC 1 0.1 1 10 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 100 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4