CDIL Bcw70 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking PACKAGE OUTLINE DETAILS BCW69 = Fil ALL DIMENSIONS IN mm BCW70 = H2 3.0 2.8 0.48 70.38 [3 2.6 Pin configuration 2.4 1 = BASE 2= EMITTER 1 2 | . 3 COLLECTOR a [1.02 | 3 0.89 0.60 2.00 ' 6.40 1.80 2 ABSOLUTE MAXIMUM RATINGS BCW69 D.C. current gain at Tj = 25 C > 120 -Ic =2 mA;-Vcp ~5V hee < 260 Collector~base voltage (open emitter) -Vcpo max. 50 Collector-emitter voltage (open base) -VcEO max. 45 Collector current (peak value) -IcmMm max. 200 Total power dissipation up to Tamb = 25 C Prot max. 250 Junction temperature Tj max. 150 Transition frequency at f = 35 MHz -Ic = 10 mA; -VcE =5 V fr typ. 150 Noise figure at Rg = 2 kQ -Ic = 200 pA; -Vcg ~5 V; f = 1 kHz; B = 200 Hz F < 10 53 215 500 BCW70 6uE<- MHz CDIL BCW70 BCW70 RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collector-base voitage (open emitter) -VcBOQ max. 50 V Collector-emitter voltage (VBE = 0) -VCES max. 50 V Collector-emitter voltage (open base) -Ic =2mA -VCEQ max. 45 V Emitter-base voltage (open collector) -VEBO max. 5 V Collector current (d.c.) -Ic max. 100 mA Collector current (peak value) -IcM max. 200 mA Total power dissipation up to Tamb = 25 C Prot max. 250 mW Storage temperature Tstg -55 to +150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to ambient Rth jra = 500 K/W CHARACTERISTICS Tj = 25 C unless otherwise specified Collector cut-off current Ig = 0; -Vcp = 20 V -IcBo < 100 nA Tg = 0; -Vcp = 20 V; Tj = 100 C -ICBo < 10 pA Base-emitter voltage -Ic = 2mA;-VckE=5 V -VBE 600 to 750 mV Saturation voltages -Ic = 10 mA; -Ip = 0,5 mA -VcEsat_ typ- 80 mV < 300 mV -VBEsat typ 720 mV -Ic = 50 mA; -Ip = 2,5 mA -VcEsat typ- 150 mV -VBEsat typ 810 mV D.C. current gain Bcwe9 ss xBCW70 -Ic = 10 pA; -Vcg =5V hfe typ. 90 150 -Ic =2mA;-Vcgp=5V > 120 215 hFE < 260 500 Collector capacitance at f: 1 MHz lg = Ie = 0; -Vcp = 10 V Ce typ. 4,5 pF Transition frequency at f = 35 MHz -Ic. 10 mA;-Vcg=5V fT typ. 150 MHz Noise figure at Rg = 2 kQ ~Ic = 200 pA; -Vcg=5V f = 1 kHz; B = 200 Hz F < 10 dB 54