SbE D MM 7929237 0041935 504 MBSGTH SG S-THOMSON 7T-O3-/7 f SGS-THOMSON Jf MICROELECTRONICS BYT 71-100 A > 800A FAST RECOVERY RECTIFIER DIODES a HIGH VOLTAGE CAPABILITY a FAST AND SOFT RECOVERY Cathode connected to case a THE SPECIFICATIONS AND CURVES EN- ABLE THE DETERMINATION OF tr AND Irm AT 100C UNDER USERS CONDITIONS APPLICATIONS s MOTOR CONTROLS AND CONVERTERS a SWITCHMODE POWER SUPPLIES A DESCRIPTION DO 220 AB . oo ; (Plastic) Fast recovery rectifiers suited for applications in combination with superswitch transistors. ABSOLUTE RATINGS (limiting values) Symbol Paramter Value Unit lerRmM Repetitive Peak Forward Current tp < 20us 90 A le (ams) | RMS Forward Current 12 A lr (ay) Average Forward Current To = 115C 6 A =0.5 lesu Surge non Repetitive Forward Current tp = 10ms 90 A Sinusaidal Prot Power Dissipation To = 90C 15 Ww Tstg Storage and Junction Temperature Range 40 to 150 C qu Symbol P eyx7i- Unit ymio arameter 100A | 200A | 400A] 600A | 800A| - Vraam Repetitive Peak Reverse Voltage 100 200 400 600 800 Vv Vrsm Non Repetitive Peak Reverse Voltage 100 200 400 600 800 Vv THERMAL RESISTANCE Symbol Parameter Value Unit Ring cy | Junction-case 4 C/W July 1989 1/4 519 SBE D MM 79259237 00419396 440 MBSGTH BYT 71-100 A 800 A ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS S G S-THOMSON Symbol Test Conditions Min. Typ. Max. Unit Ir T= 25C Va = Vram 20 yA T, = 100C 1 mA Ve Ty = 25C Ip =6A 14 Vv T, = 100C 13 RECOVERY CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit tr T, = 25C Ip =1A di-/dt = 15A/us 300 ns Va =30V Qi T, = 25C Ip =6A dir/dt = 50A/us 15 wc Vr = 200V To evaluate the conduction losses use the following equations - Ve = 1.2 + 0.025 Ir P = 1.2 x IF(av) + 0.025 Ir*(pMs) PACKAGE MECHANICAL DATA DO 220 AB Plastic 44 45 2.8 98 1,25 29 10,2 1,35 1 | @ 36 ; 37 z ; - i Eh Pe j ' ~ (Tale 3,05 min 5,85 6,3 . Contact area / 118 Noted 1.25 1 Me output O08 | 1,8 max 2,4 2,6 Cooling method by conduction (method C) Marking type number Weight 24g Recommended torque value . 80cm. N Maximum torque value 100cm N 2/4 ir SGS-THOMSON MICROELECTRONICS 520 S5bE D MM 7929237? 0041937 3.6 S-THOMSON =tp/T a 2 4 6 8 TOIELAY)(AD FIGURE 1: Low frequency power losses versus average current (A) aT Tease 1COOC Vreapplhed <9 8 Yano 4=0,5 40 Q 0,01 0,02 0,04 0,06 0,1 0,2 04 06 Tpls) FIGURE 3: Non repetitive peak surge current versus overload duration VF {v} oon 0 10 20 1A) FIGURE 5: Forward voltage drop versus forward current -TH yr SSS cTHOMSON 36? MESGTH BYT 71-100 A 800A oO 0,2 0A 06 08 5 FIGURE 2: Peak current versus form factor K 2th tp. 8) 0.9 08 Rth 0,7 06 0.5 04 03 0,2 0,1 oO 304 2 S ag32 5 1922 5 yp 2 Fay isp FIGURE 4 : Thermal impedance versus pulse width f=1 Teyjy = 25C 0 1 2 4 6 810 20 40 60 VRtv) FIGURE 6: Capacitance vorsus applied reverse voltage 3/4 521 56bE D MM 7929237 0041938 213 MBSGTH BYT 71-100 A 800A S G S-THOMSON o, (uC) ~-T yj) = 26C F yj) = 100C VR=200V Thy) = 25C Thy) = 100C VR v 2 4 6 810 20 40 60 80 100{A/yus) 2 4 6 810 20 40 6030 100(A/ps! FIGURE 7: Recovery charge versus dif/dt FIGURE 8: Recovery time versus dig/dt 9 2 4 6810 20 40 6080100 FIGURE 9: Peak reverse current versus dig/dt 4/4 57 Ses or Soce 522