BLV31 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD A DESCRIPTION: 45 C The ASI BLV31 is Designed for use in VHF amplifiers E B E B FEATURES: C D * PG = 16.5 dB Typical at 224 MHz * OmnigoldTM Metallization System J E I F G H K MAXIMUM RATINGS 3A IC 60 V VCB O 48 W @ TC = 25 C PDISS O O O O -65 C to +200 C TJ # 8 -3 2 U N C D IM M I N IM U M in c h e s / m m in c h e s / m m A 1 . 0 1 0 / 2 5 .6 5 1 . 0 5 5 / 2 6 .8 0 B .2 2 0 / 5 .5 9 .2 3 0 / 5 .8 4 C .2 7 0 / 6 .8 6 .2 8 5 / 7 .2 4 D .0 0 3 / 0 .0 8 .0 0 7 / 0 .1 8 E .1 1 7 / 2 .9 7 M A X IM U M .1 3 7 / 3 .4 8 .5 7 2 / 1 4 . 5 3 F .1 3 0 / 3 .3 0 G .2 4 5 / 6 .2 2 .2 5 5 / 6 .4 8 TSTG -65 C to +150 C H JC O J .1 7 5 / 4 .4 5 .2 1 7 / 5 .5 1 3.5 C/W K .2 7 5 / 6 .9 9 .2 8 5 / 7 .2 4 CHARACTERISTICS TEST CONDITIONS BVCEO IC = 100 mA BVCES IC = 25mA BVEBO IE = 10 mA hFE VCE = 25 V COB VCB = 25 V VCE = 25 V F = 224 MHz PG O TC = 25 C SYMBOL POUT .6 4 0 / 1 6 . 2 6 I MINIMUM TYPICAL MAXIMUM VBE = 0 V IC = 800 mA 30 V 60 V 4 V 15 f = 1.0 MHz IC= 800 mA O T= 70 C PIN = 2.5 W UNITS 75 35 5.0 15 7.0* 16.5* 120 --pF W dB O * @ 25 C A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV 0 1/1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Advanced Semiconductor, Inc.: BLV31