General Description
The AAT3174 is a high output current, high effi-
ciency, low noise, low profile charge pump DC/DC
converter. The device is ideal for multi-functional
LED photo-flash applications where solution cost,
size, and efficiency are critical.
The AAT3174 is capable of driving a regulated out-
put current up to 800mA. Output current levels can
be easily programmed in 16 steps through
AnalogicTech's Simple Serial Control™ (S2Cwire™)
interface controlled by a single microcontroller
GPIO line. This allows smooth transitions and flexi-
ble adjustment of brightness in flash or other light-
ing modes. The maximum output current can also
be set with an external RSET resistor.
The tri-mode (1X/1.5X/2X) operation of the internal
charge pump offers excellent power efficiency
throughout the output current range for both flash
and movie modes. Combined with a low external
parts count (two 1µF flying capacitors and two
small bypass capacitors at VIN and OUT), the
AAT3174 is ideally suited for small battery-pow-
ered applications.
The AAT3174 has a thermal management system to
protect the device in the event of a short-circuit con-
dition at the output pin. Built-in soft-start circuitry pre-
vents excessive inrush current during start-up. The
shutdown feature disconnects the load from VIN and
reduces quiescent current to less than 1µA.
The AAT3174 is available in a Pb-free, thermally-
enhanced 12-pin 3x3mm TDFN package and is spec-
ified over the -40°C to +85°C temperature range.
Features
• Up to 800mA Output Current
• Tri-Mode 1X/1.5X/2X in Current Mode
• 16 Current Steps Set by S2Cwire
• External RSET to Set Maximum Current
• <1µA of Shutdown
• Small Application Circuit
• No Inductors
• Automatic Soft Start
• 12-Pin TDFN 3x3mm Package
• -40°C to +85°C Temperature Range
Applications
• Camcorders
• Camera Phones
• Digital Still Cameras
• PDAs and Notebook PCs
• Smart Phones
AAT3174
High Current, High Efficiency Charge Pump
Typical Application
AAT3174
C1
1µF
C2
1µF
C
OUT
2.2µF
C
IN
4.7µF
EN/SET
VIN
C1+ C1- C2+ C2-
OUT
FL
V
IN
(2.7V to 5.5V)
Enable or
S
2
Cwire
Flash
LED
GND
RSET
3174.2006.05.1.2 1
ChargePump™
Pin Descriptions
Pin Configuration
TDFN33-12
(Top View)
VIN
C1+
C1-
1
GND
FL
RSET
VIN
OUT
C2+
C2-
N/C
EN/SE
T
2
3
4
5
6
12
11
10
9
8
7
Pin # Symbol Function
1 VIN Input power supply pin. Requires 4.7µF bypass capacitor to ground.
2 C1+ Flying capacitor C1 positive terminal. Connect a 1µF capacitor between C1+ and C1-.
3 C1- Flying capacitor C1 negative terminal.
4 GND Ground connection.
5 FL Controlled current sink. Connect the flash LED cathode to this pin.
6 RSET Connect resistor here to set maximum output current.
7 EN/SET Charge pump enable / set input control pin. When in the low state, the AAT3174 is
powered down and consumes less than 1µA. When connected to logic high level,
the AAT3174 charge pump is active. This pin should not be left floating.
8 N/C Not connected.
9 C2- Flying capacitor C2 negative terminal.
10 C2+ Flying capacitor C2 positive terminal. Connect a 1µF capacitor between C2+ and C2-.
11 OUT Charge pump output. Requires 2.2µF bypass capacitor to ground. Connect to flash LED
anode to drive the LED.
12 VIN Input power supply pin. Requires 4.7µF bypass capacitor to ground.
EP Exposed paddle (bottom). Connect to GND directly beneath package.
AAT3174
High Current, High Efficiency Charge Pump
23174.2006.05.1.2
Absolute Maximum Ratings1
TA= 25°C, unless otherwise noted.
Thermal Information2
Symbol Description Value Units
θJA Thermal Resistance 50 °C/W
PDMaximum Power Dissipation 2.0 mW
Symbol Description Value Units
VIN Input Voltage -0.3 to 6.0 V
VEN EN to GND Voltage -0.3 to 6.0 V
VEN(MAX) Maximum EN to Input Voltage VIN + 0.3 V
IOUT Maximum Output Current 1000 mA
TJOperating Temperature Range -40 to 150 °C
TSStorage Temperature Range -65 to 150 °C
TLEAD Maximum Soldering Temperature (at leads, 10 sec) 300 °C
AAT3174
High Current, High Efficiency Charge Pump
3174.2006.05.1.2 3
1. Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional operation at condi-
tions other than the operating conditions specified is not implied. Only one Absolute Maximum Rating should be applied at any one time.
2. Mounted on an FR4 board.
Electrical Characteristics1
CIN = 4.7µF, COUT = 2.2µF, C1= C2= 1.0µF; TA= -40°C to +85°C, unless otherwise noted. Typical values are
TA= 25°C, VIN = 3.6V.
Symbol Description Conditions Min Typ Max Units
Power Supply
VIN Input Voltage Range 2.7 5.5 V
1X, No Load Current 300 µA
3.0 ≤VIN ≤5.5, 1.5X Mode, 2.0 4.0
ICC Operating Current No Load Current mA
3.0 ≤VIN ≤5.5, 2X Mode, 3.0 6.0
No Load Current
ISHDN(MAX) VIN Pin Shutdown Current EN = 0 1.0 µA
IOUT(MAX)2Maximum Output Current VF= 3.6V 800 mA
IDX Output Current Accuracy Programmed for 600mA; 540 660 mA
RSET = 187kΩ
TSS Soft-Start Time 200 µs
VRSET RSET Pin Voltage 0.7 V
EN/SET
VEN(L) Enable Threshold Low VIN = 2.7V 0.4 V
VEN(H) Enable Threshold High VIN = 5.5V 1.4 V
TEN/SET LO EN/SET Low Time 0.3 60 µs
TEN/SET HI Minimum EN/SET High Time 50 ns
TEN/SET HI MAX Maximum EN/SET High Time 60 µs
TOFF EN/SET Off Timeout 500 µs
TLAT EN/SET Latch Timeout 500 µs
Input Current EN/SET Input Leakage -1 1 µA
AAT3174
High Current, High Efficiency Charge Pump
43174.2006.05.1.2
1. The AAT3174 is guaranteed to meet performance specifications from 0°C to 70°C. Specification over the -40°C to +85°C operating
temperature range is assured by design, characterization, and correlation with statistical process controls.
2. Mounted on an FR4 board.
Typical Characteristics
VIN = 3.6V, CIN = 4.7µF, COUT = 2.2µF, C1= C2= 1µF, TA= 25°C, unless otherwise noted.
Turn-Off from 1.5X Mode
(V
IN
= 3.2V; I
LED
= 150mA)
Time (200µs/div)
EN
(2V/div)
I
IN
(200mA/div)
V
F
(1V/div)
Turn-On to 2X Mode
(V
IN
= 3.2V; I
LED
= 600mA)
Time (200µs/div)
EN
(2V/div)
V
OUT
(2V/div)
I
IN
(500mA/div)
V
SINK
(1V/div)
Turn-On to 1X Mode
(V
IN
= 4.2V; I
LED
= 600mA)
Time (200µs/div)
EN
(2V/div)
V
OUT
(2V/div)
I
IN
(500mA/div)
V
SINK
(1V/div)
Turn-On to 1.5X Mode
(V
IN
= 3.2V; I
LED
= 150mA)
Time (200µs/div)
EN
(2V/div)
V
OUT
(2V/div)
I
IN
(200mA/div)
V
SINK
(1V/div)
Turn-On to 1X Mode
(V
IN
= 4.2V; I
LED
= 150mA)
Time (200µs/div)
EN
(2V/div)
V
OUT
(2V/div)
I
IN
(200mA/div)
V
SINK
(1V/div)
Efficiency vs. Supply Voltage
Supply Voltage (V)
Efficiency (%)
0
10
20
30
40
50
60
70
80
90
100
2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2
I
LED
= 300mA
I
LED
= 150mA
AAT3174
High Current, High Efficiency Charge Pump
3174.2006.05.1.2 5
Typical Characteristics
VIN = 3.6V, CIN = 4.7µF, COUT = 2.2µF, C1= C2= 1µF, TA= 25°C, unless otherwise noted.
T
OFF
vs. V
IN
Input Voltage (V)
T
OFF
(µs)
0
20
40
60
80
100
120
140
160
180
3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5 5.1 5.3 5.
5
4.7 4.92.7 2.9
-40°C
25°C
85°C
T
LAT
vs. V
IN
Input Voltage (V)
T
LAT
(µs)
0
20
40
60
80
100
120
140
160
2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5 5.1 5.3 5.54.7 4.9
-40°C
25°C
85°C
LED Current vs. R
SET
(Data = 1)
R
SET
(kΩ
Ω
)
I
LED
(mA)
0
100
200
300
400
500
600
700
800
900
1000
100 200 300 400 500 600 700 800 900 1000
Operating Characteristic
(V
IN
= 2.9V; 2X Mode; I
LED
= 300mA)
Time (2µs/div)
V
IN
(100mV/div)
V
SINK
(200mV/div)
V
OUT
(200mV/div)
Operating Characteristic
(V
IN
= 3.3V; 1.5X Mode; I
LED
= 300mA)
Time (2µs/div)
V
IN
(100mV/div)
V
SINK
(200mV/div)
V
OUT
(200mV/div)
AAT3174
High Current, High Efficiency Charge Pump
63174.2006.05.1.2
Typical Characteristics
VIN = 3.6V, CIN = 4.7µF, COUT = 2.2µF, C1= C2= 1µF, TA= 25°C, unless otherwise noted.
V
IL
vs. V
IN
Over Temperature
Input Voltage (V)
V
IL
(V)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5 5.1 5.3 5.54.7 4.92.7 2.9
-40°C
25°C85°C
V
IH
vs. V
IN
Over Temperature
Input Voltage (V)
V
IH
(V)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
3.1 3.3 3.5 3.7 3.92.7 2.9 4.1 4.3 4.5 5.1 5.3 5.54.7 4.9
-40°C
25°C
85°C
AAT3174
High Current, High Efficiency Charge Pump
3174.2006.05.1.2 7
AAT3174
High Current, High Efficiency Charge Pump
83174.2006.05.1.2
Functional Block Diagram
Charge Pump
Section 1
Charge Pump
Section 2
1MHz
Oscillator
Soft-Start
Control
C1+ C1- C2+ C2-
OUT
FL
RSET
GND
EN/SET
VIN
System Control;
S
2
Cwire;
Timing
Functional Description
The AAT3174 is a high efficiency, low noise, dual
stage tri-mode 1X/1.5X/2X charge pump device
intended for photo-flash LED applications. The
device requires only four external components: two
ceramic capacitors for the charge pump flying
capacitors, one ceramic capacitor for CIN, and one
ceramic capacitor for COUT.
The charge pump is designed to deliver regulated
load currents up to 800mA. The dual stage charge
pump section contains soft-start circuitry to pro-
hibit excessive inrush current during start-up.
System efficiency is maximized with a tri-mode,
dual stage charge pump topology. The internal
clock oscillator at 1MHz allows the use of small
external components.
The tri-mode charge pump operation further opti-
mizes power conversion efficiency. Depending
upon the variance of load current (at different
modes), input voltage, and nominal LED forward
voltage, the charge pump will operate in a 1X, 1.5X,
or 2X mode to generate the output voltage required
to power the load for a given controlled constant
current. This results in significant power savings
over voltage doubling architectures, especially
when the LEDs are also operated at lower current
levels in movie, viewing, or flashlight modes.
S2Cwire Serial Interface
The AAT3174 utilizes Analogic Tech's single wire
S2Cwire interface to enable/disable the charge
pump and adjust the output current at 16 current
levels. Each code defines the output current to be
a percentage of the maximum current set by the
resistor at the RSET pin (see Table 1).
AAT3174
High Current, High Efficiency Charge Pump
3174.2006.05.1.2 9
Table 1: Current Level Settings.
The S2Cwire interface records rising edges of the
EN/SET pin and decodes them into 16 individual
current level settings with Code 1 reserved for
maximum current. Once EN/SET has been held in
the logic high state for time TLAT, the programmed
current is seen at the current source outputs and
the internal data register is reset to 0. For subse-
quent current level programming, the number of
rising edges corresponding to the desired code
must be entered on the EN/SET pin.
When EN/SET is held low for an amount of time
greater than TOFF, the AAT3174 enters into shut-
down mode and draws less than 1µA from VIN.
Data and address registers are reset to 0 during
shutdown.
Total Output
Data (% of IMAX)
1 100.0
2 89.1
3 79.4
4 70.8
5 63.1
6 56.2
7 50.1
8 44.7
9 39.8
10 35.5
11 31.6
12 28.2
13 25.1
14 22.4
15 20.0
16 0.0
S2Cwire Serial Interface Timing
1
EN/SET
2n-1 n ≤ 16
Data Reg 0n
0
T
HI
T
LO
T
LAT
T
OFF
Application Information
Flash/Torch Control Using the RSET Pin
An alternative method can be used for flash/torch
control that eliminates the need to use the S2Cwire
single-wire interface. By using any typical digital
I/O port, an additional enable can be created (see
Figure 1).
The I/O port output configuration can be any one of
open-drain NMOS, open-drain PMOS, or push-pull
type. The control will always act as an active-low
flash enable or, equivalently, an active-high torch
enable (see Table 2).
Table 2: Flash/Torch Control Modes.
According to I/O port type, the following equations
can be used to calculate appropriate resistor values.
For an open-drain NMOS I/O port output configu-
ration, the line is pulled low to GND or left floating,
according to state. To calculate the appropriate R1
and R2resistor values, first calculate the R1resis-
tor value needed for the desired torch level LED
current:
Next, choose R2based on the desired flash level
LED current:
The current and resistance values used in the equa-
tions come from the conditions placed on the IDX
parameter of the Electrical Characteristics table.
600mA · 187kΩ
I
LED
(torch)
R
1
=
EN ENFL Mode
0 0 Off
0 1 Off
1 0 Flash
1 1 Torch
AAT3174
High Current, High Efficiency Charge Pump
10 3174.2006.05.1.2
Figure 1: Flash/Torch Control Using the RSET Pin.
AAT3174
EN/SET
VIN
C1+C1-C2+C2-
VOUT
F1
2.7V
to 5.5V
EN
Flash
LED
GND
C
IN
4.7µF
C
1
1µF
C
2
1µF
C
OUT
2.2µF
R1
R2
RSET ENFL
For examples of standard 1% values where the
LED flash current level is targeted for 700mA, see
Table 3.
Table 3: Open-Drain I/O Example
Resistor Values.
If the I/O port must be configured as an open-drain
PMOS type output, the appropriate equations can
be generated from these same concepts. As done
in the previous example, the necessary values can
then be calculated.
As a reference, the equations applicable to the
PMOS case are:
The value to use for VIO must come from the I/O
supply voltage used in the system. 0.7V is the typ-
ical value of the VRSET parameter found in the
Electrical Characteristics.
For a push-pull I/O port output configuration, first
calculate the overall RSET value needed for the
desired flash level LED current:
Next, choose a reasonable value for R1. A value
that is slightly larger than RSET, calculated from
above, is appropriate. Calculate R2and then calcu-
late the torch mode current level that results:
Once again, the current and resistance values used
in the equations come from the conditions placed on
the IDX parameter of the Electrical Characteristics
table. 0.7V is the typical value for the VRSET param-
eter. The value to use for VIO must come from the
I/O supply voltage used in the system.
Example standard 1% values are provided in Table 4.
Table 4: Push-Pull I/O Example
Resistor Values.
In all of the approaches mentioned, the open-drain
NMOS or PMOS type configurations offer the most
flexibility for current level selection.
When configured as an output, if the I/O port is only
push-pull type, then the equivalent open-drain
NMOS can also be realized. To realize this, acti-
vate the port as output only when driving the line
low. Otherwise, to release the line, set the port to
be tri-stated.
R1 R2 ILED ILED
(kΩΩ)(k
ΩΩ) Torch (mA) Flash (mA)
169 1000 95 776
165 1000 111 792
162 1000 124 805
160 1000 132 813
T
600mA · 187kΩ
I
LED
(flash)
R
SET
=
600mA · 187kΩ
I
LED
(flash)
R
1
=
R1 R2 ILED ILED
(kΩΩ)(k
ΩΩ) Torch (mA) Flash (mA)
920 193 122 703
732 205 153 701
649 210 173 707
562 223 200 703
AAT3174
High Current, High Efficiency Charge Pump
3174.2006.05.1.2 11
AAT3174
High Current, High Efficiency Charge Pump
12 3174.2006.05.1.2
Device Power Efficiency
The AAT3174 power conversion efficiency
depends on the charge pump mode. By definition,
device efficiency is expressed as the output power
delivered to the LED divided by the total input
power consumed.
When the input voltage is sufficiently greater than
the LED forward voltage, the device optimizes effi-
ciency by operating in 1X mode. In 1X mode, the
device is working as a bypass switch and passing
the input supply directly to the output. The power
conversion efficiency can be approximated by,
Due to the very low 1X mode quiescent current, the
input current nearly equals the current delivered to
the LED. Further, the low-impedance bypass
switch introduces negligible voltage drop from input
to output.
The AAT3174 further maintains optimized perform-
ance and efficiency by detecting when the input
voltage is not sufficient to sustain LED current. The
device automatically switches to 1.5X mode when
the input voltage drops too low in relation to the
LED forward voltage.
In 1.5X mode, the output voltage can be boosted to
3/2 the input voltage. The 3/2 conversion ratio
introduces a corresponding 1/2 increase in input
current. For ideal conversion, the 1.5X mode effi-
ciency is given by:
Similarly, when the input falls further, such that
1.5X mode can no longer sustain LED current, the
device will automatically switch to 2X mode. In 2X
mode, the output voltage can be boosted to twice
the input voltage. The doubling conversion ratio
introduces a corresponding doubling of the input
current. For ideal conversion, the 2X mode effi-
ciency is given by:
LED Selection
The AAT3174 is designed to drive high-intensity white
LEDs. It is particularly suitable for LEDs with an oper-
ating forward voltage in the range of 4.2V to 1.5V.
The charge pump device can also drive other loads
that have similar characteristics to white LEDs. For
various load types, the AAT3174 provides a high-cur-
rent, programmable ideal constant current source.
Capacitor Selection
Careful selection of the four external capacitors
CIN, C1, C2, and COUT is important because they will
affect turn-on time, output ripple, and transient per-
formance. Optimum performance will be obtained
when low equivalent series resistance (ESR)
ceramic capacitors are used. In general, low ESR
may be defined as less than 100mΩ. A value of
1µF for the flying capacitors is a good starting point
when choosing capacitors. If the LED current sinks
are only programmed for light current levels, then
the capacitor size may be decreased.
Ceramic composition capacitors are highly recom-
mended over all other types of capacitors for use
with the AAT3174. Ceramic capacitors offer many
advantages over their tantalum and aluminum elec-
trolytic counterparts. A ceramic capacitor typically
has very low ESR, is lowest cost, has a smaller
PCB footprint, and is non-polarized. Low ESR
ceramic capacitors help maximize charge pump
transient response. Since ceramic capacitors are
non-polarized, they are not prone to incorrect con-
nection damage.
Equivalent Series Resistance
ESR is an important characteristic to consider
when selecting a capacitor. ESR is a resistance
internal to a capacitor that is caused by the leads,
internal connections, size or area, material compo-
sition, and ambient temperature. Capacitor ESR is
typically measured in milliohms for ceramic capac-
η
η
η
T
itors and can range to more than several ohms for
tantalum or aluminum electrolytic capacitors.
Ceramic Capacitor Materials
Ceramic capacitors less than 0.1µF are typically
made from NPO or C0G materials. NPO and C0G
materials generally have tight tolerance and are
very stable over temperature. Larger capacitor val-
ues are usually composed of X7R, X5R, Z5U, or
Y5V dielectric materials. Large ceramic capacitors
are often available in lower-cost dielectrics, but
capacitors greater than 4.7µF are not typically
required for AAT3174 applications.
Capacitor area is another contributor to ESR.
Capacitors that are physically large will have a lower
ESR when compared to an equivalent material
smaller capacitor. These larger devices can improve
circuit transient response when compared to an
equal value capacitor in a smaller package size.
Thermal Protection
The AAT3174 has a thermal protection circuit that
will shut down the charge pump if the die tempera-
ture rises above the thermal limit, as is the case
during a short-circuit of the OUT pin.
PCB Layout
To achieve adequate electrical and thermal per-
formance, careful attention must be given to the
PCB layout. In the worst-case operating condition,
the chip must dissipate considerable power at full
load. Adequate heat-sinking must be achieved to
ensure intended operation.
Figure 2 illustrates an example of an adequate
PCB layout. The bottom of the package features an
exposed metal paddle. The exposed paddle acts,
thermally, to transfer heat from the chip and, elec-
trically, as a ground connection.
The junction-to-ambient thermal resistance (θJA) for
the package can be significantly reduced by follow-
ing a couple of important PCB design guidelines.
The PCB area directly underneath the package
should be plated so that the exposed paddle can
be mated to the top layer PCB copper during the
re-flow process. This area should also be connect-
ed to the top layer ground pour when available.
Further, multiple copper plated thru-holes should
be used to electrically and thermally connect the
top surface paddle area to additional ground
plane(s) and/or the bottom layer ground pour.
The chip ground is internally connected to both the
paddle and the GND pin. The GND pin conducts
large currents and it is important to minimize any
differences in potential that can result between the
GND pin and exposed paddle. It is good practice to
connect the GND pin to the exposed paddle area
using a trace as shown in Figure 2.
Figure 2: Example PCB Layout.
The flying capacitors C1 and C2 should be con-
nected close to the chip. Trace length should be
kept short to minimize path resistance and potential
coupling. The input and output capacitors should
also be placed as close to the chip as possible.
AAT3174
High Current, High Efficiency Charge Pump
3174.2006.05.1.2 13
AAT3174
High Current, High Efficiency Charge Pump
14 3174.2006.05.1.2
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
Ordering Information
Package Information
TDFN33-12
All dimensions in millimeters.
Top View Bottom View
Detail "B"
Detail "A"
Side View
3.00
±
0.05
Index Area
(D/2 x E/2)
Detail "A"
Detail "B"
1.70
±
0.05
3.00
±
0.05
0.05
±
0.05
0.229
±
0.051
7.5°
±
7.5°
2.40
±
0.05
0.16
Pin 1 Indicator
(optional)
0.375
±
0.125
0.3
±
0.10
0.45
±
0.050.23
±
0.05
0.075
±
0.075
0.1 REF
0.8
+
0.05
-0.20
Option A:
C0.30 (4x) max
Chamfered corner
Option B:
R0.30 (4x) max
Round corner
All AnalogicTech products are offered in Pb-free packaging. The term “Pb-free” means
semiconductor products that are in compliance with current RoHS standards, including
the requirement that lead not exceed 0.1% by weight in homogeneous materials. For more
information, please visit our website at http://www.analogictech.com/pbfree.
Package Marking1Part Number (Tape and Reel)2
TDFN33-12 RSXYY AAT3174IWP-T1
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in BOLD.
© Advanced Analogic Technologies, Inc.
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights,
or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice.
Customers are advised to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold sub-
ject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech
warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality con-
trol techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed.
AnalogicTech and the AnalogicTech logo are trademarks of Advanced Analogic Technologies Incorporated. All other brand and product names appearing in this document are regis-
tered trademarks or trademarks of their respective holders.