SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)88 TYPE TE! FREE IA E No. JtoC |AIR @ |x 25C P BD536 SE9563 STP70S 6.6mo im 2N1242A 7.1Amd STC5804 10m $TC5807 10m MM4645t 28m SA0419 34m STC5611 50m $T30100t 55ms STP30S 67 STP60S 67mD 2SA647t 70m m 2SA613 119m 2SA653 120mz STP40P 133m MM4020 142m | 25 @ $TC5204 142m | 25@ STC5207 142m 25 fo MM4547t 143m | 25 $G0403A 160m SE9560 SE9570 SE9573 BD272 SDI445 SDL445 S0P445 BD434C BD436C FT400A RE3845 STC5111/1 STC5114/1 STC5521/I STC5524/| D.A.T.A. 300 250 1.0 500m 10m 250m 150m 50m 10Z| 20m 20m 4.0% |300m 5.00 |500m 200m 10B| 20m 250m 1.0 SYMBOLS AND CODES EXPLAINED IN INTERP IN ORDER OF (1) MIN. DERATING FACTOR fae MAX.| tr SAT. RES. 3.0M 6OM5A 20MA}200 |250m + | 1.OMt 300m 800m 40MA/2.0 1.0MSA 1.0M8A |200m 200mMs4/ 15 |100n@ 20M&A|200 |200m 20M5A|200 250m 70Ms |2.0 # 5.0MSA 20M8Aj}200 300m 800m 30M5A|3.0 5OMSA 50MSA 5OMSA 6OMSA 2.0M RETER STRUC|Y200 |E 0 -TURE s/a_ |AD TO0200/D E Y220b To66 Cg TO5 x3 T1037 T037 TO39 TOS |AD TO5 A TOS TOS TO5 X51b |P To66 Icy TO66 |CZ MD14 MT75a|R TO8 TO8 1037 TO59 A TOE Ico TO3 [Ch TO3 |c@ X120 |BZ Y220a |D Y220a |D 220a )D T0126 T0126 |BZ TOS9 88b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)118 TYPE No. 2N2943 2N1675 D29A10 2N2942 FK3503 BSW92 2N3400 2S5C868 BFY16 2N5242 40451 BCW60A BCW6OD BCW61C 2N706/51 BSY33 2N1962 2N1963 2SC841H BSX97 MM3724 TIStt4 2N5735 TE3905 2N706B/46 2N753/5 1 40222 A3T2907 FT3644 BSS25 BC214LA NS949 2SC479H NS2100 BSW89 BSX81B D.A.T.A. 120MA 120MSA 140M8A 150M8A 150MSA 1BOMSA 1SOMSA 150M8 150M 170MA 175M 180M5 180M5 180M 200M5A 200M5A 200M8A 200M5A 200M8A 200M5A 200M&A 200M5A 200MA 200M8A 200MSA 200MA 200M84 200M5A 200M8A 200M&8A 200M5A 200M8A 200M8A 200M8 200M8A 200MSA DELAY| STORE| FALL TIME | TIME | TIME td ts tf 20n 140n 30n n n 5.0ud 70n 25n 100n@ 200nt 50nt 200n 60n 120n 30n 300n 1.0uf 65n 30n n 75n n 80nt 80nt 80nt 16nt 30nd 40nD 20not 200ndt 50nd n 25n 25n IN FREE AIR @ 25C m 150m 100 m 330m 150m 350m 300mt 150m 200m 600m 500m 1.0 150m* * 150m* * 150m* * 300m 100m 400m 400m 500m 230m* * 300m m MAX. | Cob r'bb Veb hFE SAT. Xx RES. Cob 50 5.0 6.0 |1. 35 25g 36 1.0 @ |. 100 t#A 12 200+ {1.0 5.0 @ |2.0me |170 25 5.0 D |2.0md |500 25 5.0 B |2.0mZ 350 25 10 20 TA | 60 2.0 D Z| 55 1.0 @ 1.0 @ 1.0 @ 10 2.0 2.0 10% {1 10 40 109 750 10Q | 50 754 * SYMBOLS AND CODES EXPLAINED IN INTERPRETER IN ORDER. OF (1) fab, (2) MAX RISE TIME & STRUCTURE) M|MAX. |Y200 P-PNP N-NPN T Ge EO A|TEMP| s/a AD DE T0200 Tog TO032 TO98 TO9 u ui17b R110 TOS c X20e B TO5 @ TO1OS | A R119 uS6a u uS6a u56a TO51 u18 u TO46 TO46 TO18 TOS X55 A TO122 |P TO106 IA TO46 TOS1 TO52 u u44 u47a R124c ub6a TO92 u TO46 TOS TO18 X73 MMt1 118