FZT857 Green 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 300V IC = 3.5A High Continuous Collector Current ICM = 5A Peak Pulse Current Very Low Saturation Voltage VCE(SAT) < 155mV @ 1A RCE(SAT) = 87m for a Low Equivalent On-Resistance hFE Specified Up to 3A for a High Gain Hold-Up Complementary PNP Type: FZT957 Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT223 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 e3 Weight: 0.112 grams (Approximate) C SOT223 B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Product FZT857TA FZT857QTA Notes: Compliance AEC-Q101 Automotive Marking FZT857 FZT857 Reel Size (inches) 7 7 Tape Width (mm) 12 12 Quantity per Reel 1,000 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information FZT 857 FZT857 Document Number DS33177 Rev. 9 - 2 YWW SOT223 FZT 857 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 7 = 2017) WW or WW = Week Code (01-53) 1 of 7 www.diodes.com March 2017 (c) Diodes Incorporated FZT857 Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value 350 300 7 3.5 5 Unit V V V A A Value 3.0 24 1.6 12.8 42 78 8.8 -55 to +150 Unit Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance Junction to Lead Operating and Storage Temperature Range Symbol (Note 6) PD (Note 7) (Note 6) (Note 7) (Note 8) RJA RJA RJL TJ, TSTG W mW/C C/W C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 8,000 400 Unit V V JEDEC Class 3B C 6. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT857 Document Number DS33177 Rev. 9 - 2 2 of 7 www.diodes.com March 2017 (c) Diodes Incorporated FZT857 VCE(sat) 10 Limit DC 1 1s 100ms 10ms 100m Single Pulse Tamb=25C 10m 100m 1ms 52mmX52mm Single sided 2oz Cu 100s 1 10 100 VCE Collector-Emitter Voltage (V) 3.0 Max Power Dissipation (W) IC Collector Current (A) Thermal Characteristics and Derating Information 2.5 52mmX52mm Single sided 2oz Cu 2.0 1.5 1.0 25mmX25mm Single sided 1oz Cu 0.5 0.0 0 20 D=0.5 20 Single Pulse 0 100 D=0.05 D=0.1 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Thermal Resistance (C/W) 30 D=0.2 Document Number DS33177 Rev. 9 - 2 100 120 140 160 Single Pulse T amb=25C 100 Transient Thermal Impedance FZT857 80 Derating Curve 52mmX52mm Single sided 2oz Cu 10 60 Temperature (C) Safe Operating Area 40 40 52mmX52mm Single sided 2oz Cu 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 3 of 7 www.diodes.com March 2017 (c) Diodes Incorporated FZT857 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Symbol BVCBO BVCER BVCEO BVEBO Min 350 350 300 7 Collector Cut-Off Current ICBO -- Collector Cut-Off Current ICER -- Emitter Cut-Off Current IEBO DC Current Gain (Note 10) hFE Typ 475 475 350 8 <1 -- Max -- -- -- -- <1 -- <1 200 200 25 15 59 95 180 300 1,020 940 50 1 10 -- 300 -- -- 100 155 230 345 1,250 1,120 50 1 Unit V V V V nA A nA A nA Collector-Emitter Saturation Voltage (Note 10) VCE(SAT) Base-Emitter Saturation Voltage (Note 10) Base-Emitter Turn-On Voltage (Note 10) VBE(SAT) VBE(ON) -- 100 100 15 -- -- -- -- -- -- -- Current Gain-Bandwidth Product (Note 10) fT -- 80 -- MHz COBO tON tOFF -- -- -- 21 100 5,300 -- -- -- pF Output Capacitance Switching Times Note: -- mV mV mV ns Test Condition IC = 100A IC = 1A, RB 1k IC = 1mA IE = 100A VCB = 300V VCB = 300V, TA = +100C VCE = 300V, RB 1k VCE = 300V, TA = +100C VEB = 6V IC = 10mA, VCE = 5V IC = 500mA, VCE = 10V IC = 2A, VCE = 10V IC = 3A, VCE = 10V IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 2A, IB = 200mA IC = 3.5A, IB = 600mA IC = 3.5A, IB = 600mA IC = 3.5A, VCE = 10V IC = 100mA, VCE = 10V, f = 50MHz VCB = 20V, f = 1MHz IC = 250mA, VCC = 50V, IB1 = -IB2 = 25mA 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. FZT857 Document Number DS33177 Rev. 9 - 2 4 of 7 www.diodes.com March 2017 (c) Diodes Incorporated FZT857 Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1 VCE=10V IC/IB=10 150C 150C 200 VCE(sat) (V) Current Gain 250 100C 150 25C 100 100C 0.1 25C -55C -55C 50 0 1m 10m 100m 0.01 1m 1 10m 1 VCE(sat) v IC hFE v IC 1.0 1.0 -55C 0.8 25C 0.6 -55C 0.8 VBE(on) (V) VBE(sat) (V) 100m IC Collector Current (A) IC Collector Current (A) 100C 0.4 25C 0.6 100C 0.4 IC/IB=10 150C 0.2 1m 10m 100m VCE=10V 150C 0.2 1m 1 IC Collector Current (A) 10m 100m 1 IC Collector Current (A) VBE(sat) v IC VBE(on) v IC 1.5 IC/IB=10 f = 1MHz 1000 Capacitance (pF) VCE(sat) (V) IC/IB=20 1.0 IC/IB=50 IC/IB=5 0.5 Cibo 100 Cobo T = 25C 0.0 0 1 2 3 4 5 10 10m VCE(sat) v Gain FZT857 Document Number DS33177 Rev. 9 - 2 100m 1 10 100 Voltage(V) IC Collector Current (A) Capacitance v Voltage 5 of 7 www.diodes.com March 2017 (c) Diodes Incorporated FZT857 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0 -1 0 e A1 7 7 A SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X Note: C For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. FZT857 Document Number DS33177 Rev. 9 - 2 6 of 7 www.diodes.com March 2017 (c) Diodes Incorporated FZT857 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2017, Diodes Incorporated www.diodes.com FZT857 Document Number DS33177 Rev. 9 - 2 7 of 7 www.diodes.com March 2017 (c) Diodes Incorporated