2N4401
2N4401
NPN General Purp o se Si-Epi ta xial Plan ar Tra nsist ors
Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN
Version 2006-09-12
Dimensions - Maße [mm]
Power dissipation
Verlustleistung
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
2N4401
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 40 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 60 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) IC600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.1 mA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 150 mA, VCE = 1 V
IC = 500 mA, VCE = 2 V
hFE
hFE
hFE
hFE
hFE
20
40
80
100
40
–
–
–
–
–
–
–
–
300
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
VCEsat
–
–
–
–
0.40 V
0.75 V
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
VBEsat
0.75 V
–
–
–
0.95 V
1.2 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
16
18
9
2 x 2.54
CBE
2N4401
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCE = 35 V, VEB = 0,4 V ICBV – – 100 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VCE = 35 V, VEB = 0,4 V IEBV – –- 100 nA
Gain-Bandwidth Product – Transitfrequenz
IC = 20 mA, VCE = 10 V, f = 100 MHz fT250 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 5 V, IE = ie = 0, f = 1 MHz CCBO – – 6.5 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 30 pf
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
VCC = 30 V, VEB = 2 V
IC = 150 mA, IB1 = 15 mA
td– – 15 ns
tr– – 20 ns
storage time
fall time
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
ts– – 225 ns
tf– – 30 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren 2N4403
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
