LORAL/FREQUENCY/SENICOND bh D SO VOLI Tm 7-O7-F SILICON TUNING VARACTORS DESCRIPTION 100 The GC1500 series tuning varactors are silicon abrupt junc- - . tion devices. They offer the highest Q and lowest resistance 40 a y= AB. available in 30 volt tuning diodes. - coe . gra. . 30 F a 30 VOLTS A unique silicon dioxide passivation process assures greater zo BS - | stability, reliability, and low leakage currents at higher temperatures. a6 Ry oo APPLICATIONS 2 soho kexts 5 s0t ~ ecisi2 The GC1500 series of tuning varactors are used for both & - ES tise . narrow and wide band tuning through X-Band. & 20PN . Se ccists These devices are used in circuits requiring a high Q voltage 5 oS . ~~ ~ 601606 variable capacitance such as: tunable filters and amplifiers, 2 10 ~ SGCiEDS voltage controlled oscillators, frequency synthesizers and con a " GCIBO4 tinuous phase shifters, They are also useful as frequency and C ~ > s0ts0a phase modulators in communications applications. ao + . Lo acisoe woe PS act Standard capacitance tolerance is +10%. Diodes can be opti- nh * GC1800 mized for custom electrical or mechanical specifications upon 20 - : . request REVERSE BIAS SCALE INCLUDES WORK ~~ GCIS00A q , FUNCTION FOR SILIGON Were7 VOLTS) . All specifications shown on the following page are based on 105 i 30 t a0 o i iO i 0 70 SO 0 the style 30 package. Other ceramic or glass packages are , , available. Chips mounted on carriers with gold wire/ribbon Vp (VOLTS) leads are also available. Typical Junction Capacitance vs Reverse Bias x #0 ead a) a. 4 col a 3 : z Zz poe) te FREQUENCY SOURCES SEMEC PRVIBION 5 LORAL/FREQUENCY/SEMICOND ME SS79b2) OO00794 1 7 o7-7? "30-VOLT. SILICON TUNING VARACTORS ELECTRICAL SPECIFICATIONS Ta = 25C TOTAL CAPACITANCE! | QUALITY FACTOR? | CAPACITANCE RATIO! MODEL (AT -4V,1MHz) | (AT -4V, 50 MHz) (Cig/Ci39) NUMBER A Q_4 (MIN) ~ | (MIN) GC1500A (CHIP) - 0.4 (CHIP) 5000 (CHIP) 4.2 (CHIP) GC1500B 0.6 4000 3.0 GC1500 0.8 3900 3.3 GC1501 1.0 3800 3.4 GC1502 1.2 3800 3.4 GC1503 1.5 3600 3.5 GC 1504 1.8 3500 3.5 GC1505 2.2 3500 3.7 GC1506 2.7 3300 3.7 GC1507 3.3 3100 3.8 GC1508 3.9 2700 3.9 GC1509 4.7 2600 3.9 GC1510 5.6 2600 4.0 GC1511 6.8 2400 4.0 GC1512 8.2 2200 4.0 GC1513 10.0 2200 4.2 NOTES: 1. THESE VALUES INCLUDE A PACKAGE CAPACITANCE OF .18 pF. 2. QISCALCULATED FROM: Q= 1__. WHERE f= 50 MHz AND 27fR,Cs R, = SERIES RESISTANCE MEASURED AT 1 GHz USING TRANSMISSION LOSS TECHNIQUES. CAPACITANCE IS MEASURED AT 1 MHz. 3. STANDARD CASE STYLES INCLUDE: 00, 15, 30, 35, 36, 80, 85, 88 AND 89. WHEN ORDERING, SPECIFY THE DESIRED CASE STYLE BY ADDING ITS NUMBER AS A SUFFIX TO THE BASIC PART NUMBER. OTHER CASE STYLES ARE AVAILABLE ON REQUEST. - RATINGS Minimum Voltage Breakdown: 30 volts at 10 ZA max Capacitance- Temperature Maximum Leakage Current: 0.02 MA at 25 volts at 25C Coefficient: 300 ppm/C at Vaz-4Vv 2.0 PA at 25 volts at 125C oat -c rs 2 ra) 24 os pe] > a = re} D (17) FREQUENCY SOURCES SEMICONDUCTOR FIVIBION 6 96D 00795 OD Fa7-7F 30-VOLT % > mm 5579621 0000795 3 mm SILICON TUNING VARACTORS LORAL/FREQUENCY/SEMLCOND ZCOND PACKAGE STYLES of tit wow - pi | - - 7.89. MIN et 1 oO sow f] ey | 7 *. . GOLD CONTACT ae 4 et Lf i pom og O 3 GOLD BACKING = BOT Loy bene SE nel po o Trae MESA AnEA cH i > Cpe tSpe Lpsamnit CONTACTS COLO ConOTeF SpA Sekt Style 00 Style 15 Style 35 es | a ie fig pe O77 | LEADS d 7m ty TV e803 G03 THK . $3. aa { of . a . t Fo. bez ohe oo] 31 $e] crac : Tl] f {+ ~ * eo O27 MAK on |. a i me - a7 BE a . Cpe ite Ape stot | CptSoF Lp= 424i _ tpetipF ips Ata fpethpf tp i50H Dee.269F tpxtint . Style 36 Style 80 Style 85 Styies8 | Style 88 (e) Heat sink end. Dimensions are in inches. Other Package Styles Are Available Upon Request The cathode is the heat sink end of each package. Reverse polarity is available at slightly higher cost. 0 9 met) a4 5 ri) a a FREQUENCY SOURCES SEMICONDUCTOR MmvVIston 7