BZT52B22-D3 - Vishay Presicion Group

VISHAY

BZT52 Series

Document Number 85760

Rev. 2, 01-Jul-03

Vishay Semiconductors

www.vishay.com

17431

Zener Diodes

Features

• Silicon Planar Power Zener Diodes

• These diodes are also available in other case

styles and other configurations including: the

SOT-23 case with type designation BZX84 series,

the dual zener diode common anode configuration

in the SOT-23 case with type designation AZ23

series and the dual zener diode common cathode

configuration in the SOT-23 case with type desig-

nation DZ23 series.

• The Zener voltages are graded according to the

international E 24 standard. Standard Zener volt-

age tolerance is ± 5 %. Replace suffix "C" with "B"

for ± 2 % tolerance. Other tolerances and other

Zener voltages are available upon request.

Mechanical Data

Case: SOD-123 Plastic Case

Weight: approx. 10 mg

Packaging Codes/Options:

D3 / 10 K per 13 " reel (8 mm tape)

D4 / 3 K per 7 " reel (8 mm tape)

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 area

Maximum Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid provided that electrodes are kept at ambient temperature

Parameter Test condition Symbol Value Unit

Zener current see table " Characteristics "

Power dissipation Ptot 4101) mW

Parameter Test condition Symbol Value Unit

Thermal resistance junction to

ambient air

RθJA 3001) °C/W

Junction temperature TJ150 °C

Storage temperature range TS- 65 to + 150 °C

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Document Number 85760

Rev. 2, 01-Jul-03

VISHAY

BZT52 Series

Vishay Semiconductors

Electrical Characteristics

IZT1 = 5 mA, IZT2 = 1 mA

(1) Measured with pulses Tp = 5 ms

(2) = IZT1 = 2.5 mA

(3) = IZT2 = 0.5 mA

(4) Valid provided that electrodes are kept at ambient temperature.

Partnumber Marking

Code

Zener Voltage

Range1)

Dynamic Resistance Tes t

Current

Tem p.

Coefficient

Reverse

Voltage

Admissible Zener

Current4)

VZ @ IZT1 rzj @ IZT1 rzj @ IZT2 IZT1 @ IZT1 VR @ IR

100 nA,

IZ @

Tamb =

45 °C,

IZ @

Tamb =

25 °C,

VΩmA αVZ

(10-4/°C)

VmA

min max

BZT52C2V4 W1 2.2 2.6 85 600 5- 9 to - 4 - - -

BZT52C2V7 W2 2.5 2.9 75 (< 83) < 500 5- 9 to - 4 -113 134

BZT52C3 W3 2.8 3.2 80 (< 95) < 500 5- 9 to - 3 -98 118

BZT52C3V3 W4 3.1 3.5 80 (< 95) < 500 5- 8 to - 3 -92 109

BZT52C3V6 W5 3.4 3.8 80 (< 95) < 500 5- 8 to - 3 -85 100

BZT52C3V9 W6 3.7 4.1 80 (< 95) < 500 5- 7 to - 3 -77 92

BZT52C4V3 W7 44.6 80 (< 95) < 500 5- 6 to - 1 -71 84

BZT52C4V7 W8 4.4 570 (< 78) < 500 5- 5 to +2 -64 76

BZT52C5V1 W9 4.8 5.4 30 (< 60) < 480 5- 3 to +4 > 0.8 56 67

BZT52C5V6 WA 5.2 610 (< 40) < 400 5- 2 to +6 > 1 50 59

BZT52C6V2 WB 5.8 6.6 4.8 (< 10) < 200 5- 1 to +7 > 2 45 54

BZT52C6V8 WC 6.4 7.2 4.5 (< 8) < 150 5+2 to +7 > 3 41 49

BZT52C7V5 WD 77.9 4 (< 7) < 50 5+3 to +7 > 5 37 44

BZT52C8V2 WE 7.7 8.7 4.5 (< 7) < 50 5+4 to +7 > 6 34 40

BZT52C9V1 WF 8.5 9.6 4.8 (< 10) < 50 5+5 to +8 > 7 30 36

BZT52C10 WG 9.4 10.6 5.2 (< 15) < 70 5+5 to +8 > 7.5 28 33

BZT52C11 WH 10.4 11.6 6 (< 20) < 70 5+5 to +9 > 8.5 25 30

BZT52C12 WI 11.4 12.7 7 (< 20) < 90 5+6 to +9 > 9 23 28

BZT52C13 WK 12.4 14.1 9 (< 25) < 110 5+7 to +9 > 10 21 25

BZT52C15 WL 13.8 15.6 11 (< 30) < 110 5+7 to +9 > 11 19 23

BZT52C16 WM 15.3 17.1 13 (< 40) < 170 5+8 to +9.5 > 12 17 20

BZT52C18 WN 16.8 19.1 18 (< 50) < 170 5+8 to +9.5 > 14 15 18

BZT52C20 WO 18.8 21.2 20 (< 50) < 220 5+8 to +10 > 15 14 17

BZT52C22 WP 20.8 23.3 25 (< 55) < 220 5+8 to +10 > 17 13 16

BZT52C24 WR 22.8 25.6 28 (< 80) < 220 5+8 to +10 > 18 11 13

BZT52C27 WS 25.1 28.9 30 (< 80) < 250 5+8 to +10 > 20 10 12

BZT52C30 WT 28 32 35 (< 80) < 250 5+8 to +10 > 22.5 910

BZT52C33 WU 31 35 40 (< 80) < 250 5+8 to +10 > 25 8 9

BZT52C36 WW 34 38 40 (< 90) < 250 5+8 to +10 > 27 8 9

BZT52C39 WX 37 41 50 (< 90) < 300 5+10 to +12 > 29 7 8

BZT52C43 WY 40 46 60 (< 100) < 700 5+10 to +12 > 32 6 7

BZT52C47 WZ 44 50 70 (< 100) < 750 5+10 to +12 > 35 5 6

BZT52C51 X1 48 54 70 (< 100) < 750 5+10 to +12 > 38 5 6

BZT52C56 X2 52 60 < 135(2) < 1000(3) 2.5 typ. +10(2) - - -

BZT52C62 X3 58 66 < 150(2) < 1000(3) 2.5 typ. +10(2) - - -

BZT52C68 X4 64 72 < 200(2) < 1000(3) 2.5 typ. +10(2) - - -

BZT52C75 X5 70 79 < 250(2) < 1500(3) 2.5 typ. +10(2) - - -

VISHAY

BZT52 Series

Document Number 85760

Rev. 2, 01-Jul-03

Vishay Semiconductors

www.vishay.com

Electrical Characteristics

IZT1 = 5 mA, IZT2 = 1 mA

1) Measured with pulses Tp = 5 ms

2) = IZT1 = 2.5 mA

3) = IZT2 = 0.5 mA

4) Valid provided that electrodes are kept at ambient temperature.

Partnumber Marking

Code

Zener Voltage

Range1)

Dynamic Resistance Te s t

Current

Tem p.

Coefficient

Reverse

Voltage

Admissible Zener

Current4)

VZ @ IZT1 rzj @ IZT1 rzj @ IZT2 IZT1 @ IZT1 VR @ IR

100 nA,

IZ @

Tamb =

45 °C,

IZ @

Tamb =

25 °C,

VΩmA αVZ

(10-4/°C)

VmA

min max

BZT52B2V4 W1 2.35 2.45 85 600 5- 9 to - 4 - - -

BZT52B2V7 W2 2.65 2.75 75 (< 83) < 500 5- 9 to - 4 -113 134

BZT52B3 W3 2.94 3.06 80 (< 95) < 500 5- 9 to - 3 -98 118

BZT52B3V3 W4 3.23 3.37 80 (< 95) < 500 5- 8 to - 3 -92 109W5

BZT52B3V6 W5 3.53 3.67 80 (< 95) < 500 5- 8 to - 3 -85 100

BZT52B3V9 W6 3.82 3.98 80 (< 95) < 500 5- 7 to - 3 -77 92

BZT52B4V3 W7 4.21 4.39 80 (< 95) < 500 5- 6 to - 1 -71 84

BZT52B4V7 W8 4.61 4.79 70 (< 78) < 500 5- 5 to + 2 -64 76

BZT52B5V1 W9 55.2 30 (< 60) < 480 5- 3 to + 4 > 0.8 56 67

BZT52B5V6 WA 5.49 5.71 10 (< 40) < 400 5- 2 to + 6 > 1 50 59

BZT52B6V2 WB 6.08 6.32 4.8 (< 10) < 200 5- 1 to + 7 > 2 45 54

BZT52B6V8 WC 6.66 6.94 4.5 (< 8) < 150 5+ 2 to + 7 > 3 41 49

BZT52B7V5 WD 7.35 7.65 4 (< 7) < 50 5+ 3 to + 7 > 5 37 44

BZT52B8V2 WE 8.04 8.36 4.5 (< 7) < 50 5+ 4 to + 7 > 6 34 40

BZT52B9V1 WF 8.92 9.28 4.8 (< 10) < 50 5+ 5 to + 8 > 7 30 36

BZT52B10 WG 9.8 10.2 5.2 (< 15) < 70 5+ 5 to + 8 > 7.5 28 33

BZT52B11 WH 10.8 11.2 6 (< 20) < 70 5+ 5 to + 9 > 8.5 25 30

BZT52B12 WI 11.8 12.2 7 (< 20) < 90 5+ 6 to + 9 > 9 23 28

BZT52B13 WK 12.7 13.3 9 (< 25) < 110 5+ 7 to + 9 > 10 21 25

BZT52B15 WL 14.7 15.3 11 (< 30) < 110 5+ 7 to + 9 > 11 19 23

BZT52B16 WM 15.7 16.3 13 (< 40) < 170 5+ 8 to + 9.5 > 12 17 20

BZT52B18 WN 17.6 18.4 18 (< 50) < 170 5+ 8 to + 9.5 > 14 15 18

BZT52B20 WO 19.6 20.4 20 (< 50) < 220 5+ 8 to + 10 > 15 14 17

BZT52B22 WP 21.6 22.4 25 (< 55) < 220 5+ 8 to + 10 > 17 13 16

BZT52B24 WR 23.5 24.5 28 (< 80) < 220 5+ 8 to + 10 > 18 11 13

BZT52B27 WS 26.5 27.5 30 (< 80) < 250 5+ 8 to + 10 > 20 10 12

BZT52B30 WT 29.4 30.6 35 (< 80) < 250 5+ 8 to + 10 > 22.5 910

BZT52B33 WU 32.3 33.7 40 (< 80) < 250 5+ 8 to + 10 > 25 8 9

BZT52B36 WW 35.3 36.7 40 (< 90) < 250 5+ 8 to + 10 > 27 8 9

BZT52B39 WX 38.2 39.8 50 (< 90) < 300 5+ 10 to + 12 > 29 7 8

BZT52B43 WY 42.1 43.9 60 (< 100) < 700 5+ 10 to + 12 > 32 6 7

BZT52B47 WZ 46.1 47.9 70 (< 100) < 750 5+ 10 to + 12 > 35 5 6

BZT52B51 X1 50 52 70 (< 100) < 750 5+ 10 to + 12 > 38 5 6

BZT52B56 X2 54.9 57.1 < 135(2) < 1000(3) 2.5 typ. + 10(2) - - -

BZT52B62 X3 60.8 63.2 < 150(2) < 1000(3) 2.5 typ. + 10(2) - - -

BZT52B68 X4 66.6 69.4 < 200(2) < 1000(3) 2.5 typ. + 10(2) - - -

BZT52B75 X5 73.5 76.5 < 250(2) < 1500(3) 2.5 typ. + 10(2) - - -

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Document Number 85760

Rev. 2, 01-Jul-03

VISHAY

BZT52 Series

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Figure 1. Forward characteristics

Figure 2. Admissible Power Dissipation vs. Ambient Temperature

Figure 3. Pulse Thermal Resistance vs. Pulse Duration

18114

18115

°C

18116

Figure 4. Dynamic Resistance vs. Zener Current

Figure 5. Capacitance vs. Zener Voltage

Figure 6. Dynamic Resistance vs. Zener Current

18117

18118

18119

VISHAY

BZT52 Series

Document Number 85760

Rev. 2, 01-Jul-03

Vishay Semiconductors

www.vishay.com

Figure 7. Dynamic Resistance vs. Zener Current

Figure 8. Thermal differential resistance versus Zener voltage

Figure 9. Dynamic resistance versus Zener voltage

18120

°C/W

18121

18122

Figure 10. Temperature dependence of Zener voltage versus

Zener voltage

Figure 11. Change of Zener voltage versus junction temperature

Figure 12. Temperature dependence of Zener voltage versus

Zener voltage

°C

18135

18124

°C

18136

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Document Number 85760

Rev. 2, 01-Jul-03

VISHAY

BZT52 Series

Vishay Semiconductors

Figure 13. Change of Zener voltage versus junction temperature

Figure 14. Change of Zener voltage from turn-on up to the point of

thermal equilibrium versus Zener voltage

Figure 15. Change of Zener voltage from turn-on up to the point of

thermal equilibrium versus Zener voltage

18158

18159

18160

VISHAY

BZT52 Series

Document Number 85760

Rev. 2, 01-Jul-03

Vishay Semiconductors

www.vishay.com

18111

Figure 16. Breakdown Characteristics

18112

Figure 17. Breakdown Characteristics

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Document Number 85760

Rev. 2, 01-Jul-03

VISHAY

BZT52 Series

Vishay Semiconductors

18157

Figure 18. Breakdown Characteristics

VISHAY

BZT52 Series

Document Number 85760

Rev. 2, 01-Jul-03

Vishay Semiconductors

www.vishay.com

Package Dimensions in Inches (mm)

Mounting Pad Layout

.022 (0.55)

.112 (2.85)

.152 (3.85)

.067 (1.70)

.053 (1.35)

max.

.010 (0.25)

min.

Cathode Band

.006 (0.15)

max.

.140 (3.55)

.100 (2.55)

.055 (1.40)

.004 (0.1)

max.

17432

0.94(2.40)

17430

0.055(1.40)

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Document Number 85760

Rev. 2, 01-Jul-03

VISHAY

BZT52 Series

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the

use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423