PD - 93930F IRF6100 HEXFET(R) Power MOSFET l l l l l l Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065@VGS = -4.5V 0.095@VGS = -2.5V -5.1A -4.1A Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an ex- D G S tremely efficient and reliable device. FlipFET ISOMETRIC The FlipFETTM package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFETTM the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards. Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -20 5.1 3.5 35 2.2 1.4 17 12 -55 to + 150 V A W mW/C V C Thermal Resistance Symbol RJA RJ-PCB www.irf.com Parameter Junction-to-Ambient Junction-to-PCB mounted Typ. Max. Units C/W 35 56.5 --- 1 07/13/06 IRF6100 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- -0.45 9.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.010 --- V/C Reference to 25C, ID = -1mA --- 0.065 VGS = -4.5V, ID = -5.1A --- 0.095 VGS = -2.5V, ID = -4.1A --- -1.2 V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -5.1A --- -1.0 VDS = -20V, VGS = 0V A --- -25 VDS = -16V, VGS = 0V, TJ = 125C --- 100 VGS = 12V nA --- -100 VGS = -12V 14 21 ID = -5.1A 1.9 2.9 nC VDS = -16V 5.0 7.5 VGS = -5.0V 12 --- VDD = -10V 12 --- ID = -1.0A ns 50 --- RG = 5.8 50 --- VGS = -4.5V 1230 --- VGS = 0V 250 --- pF VDS = -15V 180 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -2.2 -33 --- --- --- --- 48 34 -1.2 72 51 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.2A, VGS = 0V TJ = 25C, IF = -2.2A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square 2oz copper on FR-4. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF6100 100 100 VGS -7.00V -5.00V -4.50V -2.50V -1.80V -1.50V -1.20V BOTTOM -1.00V 10 1 -1.00V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 1 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 TJ = 25 C TJ = 150 C 10 V DS = -15V 20s PULSE WIDTH 2.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 1 10 100 Fig 2. Typical Output Characteristics 100 2.0 20s PULSE WIDTH TJ = 150 C -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.5 -1.00V 0.1 0.1 100 -VDS , Drain-to-Source Voltage (V) 1 1.0 VGS -7.00V -5.00V -4.50V -2.50V -1.80V -1.50V -1.20V BOTTOM -1.00V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 3.0 ID = -5.1A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF6100 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1600 Ciss 1200 800 400 0 Coss Crss 1 10 10 -VGS , Gate-to-Source Voltage (V) 2000 VDS =-16V 8 6 4 2 0 100 ID = -5.1A 0 8 12 16 20 24 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 4 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) TJ = 150 C TJ = 25 C 1 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2.4 10us 10 100us 1ms 1 10ms TA = 25 C TJ = 150 C Single Pulse 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF6100 6.0 RD VDS -ID , Drain Current (A) 5.0 VGS D.U.T. RG 4.0 - + VDD VGS 3.0 Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit 1.0 td(on) 0.0 tr t d(off) tf VGS 25 50 75 100 125 10% 150 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.08 RDS (on) , Drain-to-Source On Resistance ( ) RDS(on) , Drain-to -Source On Resistance ( ) IRF6100 0.07 0.06 0.05 ID = -5.1A 0.04 0.03 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.16 0.12 0.08 VGS = -2.5V VGS = -4.5V 0.04 0 10 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 20 30 40 -I D , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com IRF6100 20 1.0 16 Power Dissipation (W) -V GS(th) Gate threshold Voltage (V) 1.1 0.9 ID = -250A 0.8 0.7 0.6 12 8 4 0.5 0 0.4 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 15. Threshold Voltage Vs. Temperature 0.001 0.010 0.100 1.000 10.000 Pulsewidth (sec) Fig 16. Maximum Power Dissipation Vs. Time FlipFET Part Marking Information www.irf.com 7 IRF6100 FlipFET Outline Dimension and Tape and Reel 127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ >@ & ; % >@ >@ >@ $ & ; >@ & ; >@ %$//$66,*10(176 >@ ; *DWH %DOO 'UDLQ %DOO 6Q $J &X >@ >@ >@ & >@ 'UDLQ %DOO /($')5((62/'(5 %$//&20326,7,21 >@ >@ >@ 6RXUFH %DOO 6285&( '5$,1 '5$,1 *$7( >@ PP %$// /2&$7,21 ;>@ PP 5(&200(1'(')22735,17 PP )(('',5(&7,21 127(6 7$3($1'5((/287/,1(&21)250672(,$(,$ Tape and Reel Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/06 8 www.irf.com