SIDC24D60SIC3
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
Silicon Carbide Schottky Diode
Applications:
• SMPS, PFC, snubber
FEATURES:
• Revolutionary semiconductor material -
Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching
behavior
• No forward recovery
A
C
Chip Type VBR IF Die Size Package Ordering Code
SIDC24D60SIC3 600V 8A 1.706 x 1.38 mm2 sawn on foil
Q67050-A4281-
A101
MECHANICAL PARAMETER:
Raster size 1.706x 1.38
Anode pad size 1.405 x 1.08 mm
Area total / active 2.354 / 1.548 mm2
Thickness 355 µm
Wafer size 75 mm
Flat position 0 deg
Max. possible chips per wafer 1649 pcs
Passivation frontside Photoimide
Anode metalization 3200 nm Al
Cathode metalization 1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond Electrically conductive glue or solder
Wire bond Al, ≤ 350µm
Reject Ink Dot Size ∅ ≥ 0.3 mm
Recommended Storage Environment store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
SIDC24D60SIC3
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
Maximum Ratings
Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage VRRM 600
Surge peak reverse voltage VRSM 600 V
Continuous forward current limited by
Tjmax IF
8
Single pulse forward current
(depending on wire bond configuration) IFSM TC =25°C, tP =10 ms sinusoidal
26
Maximum repetitive forward current
limited by Tjmax IFRM TC = 100°C, Tj=150°C,
D=0.1 32
Non repetitive peak forward current IFMAX TC =25°C, tp=10µs 80
A
Operating junction and storage
temperature Tj , Tstg -55...+175 °C
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Value
Parameter Symbol Conditions min. Typ. max. Unit
Reverse leakage current IR VR=600V Tj=25°C 28 300 µA
Forward voltage drop VF IF=8A Tj=25°C
1.5 1.7 V
Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component
Value
Parameter Symbol Conditions min. Typ. max. Unit
Total capacitive charge QC IF=8A
di/dt=400A/µs
VR=200V Tj = 150 °C
24
nC
Switching time trr IF=8A
di/dt=400A/µs
VR= 200V Tj = 150 °C n.a. ns
VR=1V 280
VR=150V 26
Total capacitance
C IF=8A
di/dt=400A/µs
Tj=25°C
f=1MHz
VR=300V 18
pF
SIDC24D60SIC3
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
CHIP DRAWING:
1705
1380
1080
1405
R140
SIDC24D60SIC3
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet INFINEON TECHNOLOGIES
SDT08S60
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
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All Rights Reserved.
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