PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
*V
CEO = -12V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -15 V
Collector-Emitter Voltage VCEO -12 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -20 A
Continuous Collector Current IC-5 A
Base Current IB-500 mA
Power Dissipation at Tamb
=25°C Ptot 2.5 W
Operating and Storage Temperature
Range Tj:Tstg -55 to +150 °C
†The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches by 2 inches
FZT1147A
C
C
E
B
SOT223
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL VALUE UNIT CONDITIONS.
MIN. TYP. MAX.
Collector-Base
Breakdown Voltage V(BR)CBO -15 -35 V IC=-100µA
Collector-Emitter
Breakdown Voltage VCES -12 -25 V IC=-100µA
Collector-Emitter
Breakdown Voltage VCEO -12 -25 V IC=-10mA *
Collector-Emitter
Breakdown Voltage VCEV -12 -25 V IC=-100µA, VEB=+1V
Emitter-Base Breakdown
Voltage V(BR)EBO -5 -8.5 V IE=-100µA
Collector Cut-Off Current ICBO -0.3 -100 nA VCB=-12V
Emitter Cut-Off Current IEBO -0.3 -100 nA VEB=-4V
Collector Emitter Cut-Off
Current ICES -0.3 -100 nA VCE=-10V
Collector-Emitter
Saturation Voltage VCE(sat) -25
-70
-90
-115
-250
-50
-110
-130
-170
-400
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
IC=-0.5A, IB=-2.5mA*
IC=-1A, IB=-6mA*
IC=-2A, IB=-20mA*
IC=-5A, IB=-50mA*
Base-Emitter
Saturation Voltage VBE(sat) -950 -1050 mV IC=-5A, IB=-50mA*
Base-Emitter Turn-On
Voltage VBE(on) -905 -1000 mV IC=-5A, VCE
=-2V*
Static Forward Current
Transfer Ratio hFE 270
250
200
150
90
450
400
340
245
145
50
850 IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-5A, VCE=-2V*
IC=-10A, VCE=-2V*
IC=-20A, VCE=-2V*
Transition Frequency fT115 MHz IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance Ccb 80 pF VCB=-10V, f=1MHz
Switching Times ton 150 ns IC=-4A, IB=-40mA,
VCC=-10V
toff 220 ns IC=-4A, IB=±40mA,
VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%.
FZT1147A
FZT1147A
1m 100
1m 100
1m 100 100m 100
1001m
1m 100
IC- Collector Current (A)
VCE(sat) v IC
0
1.0
VCE(sat) - (V)
IC/IB=10
IC/IB=50
IC/IB=100
+25°C
-55°C
hFE - Typical Gain
800
+100°C
0
IC- Collector Current (A)
hFE v IC
+25°C
+100°C
VBE(on) - (V)
1.5
-55°C
0
IC- Collector Current (A)
VBE(on) v IC
+100°C
VCE(sat) - (V)
1.0
+25°C
0
IC- Collector Current (A)
VCE(sat) v IC
+100°C
VBE(sat) - (V)
1.8
0.9
+25°C
0
IC- Collector Current (A)
VBE(sat) v IC
1s
100ms
IC- Collector Current (A)
100
DC
100m
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
VCE=2V
+25°C
-55°C
IC/IB=100
VCE=2V
-55°C
IC/IB=100
0.2
0.4
0.6
0.8
10m 100m 1 10 10m 100m 1 10
0.2
0.4
0.6
0.8
10m 100m 1 10
200
400
600
10m 100m 1 10
0.3
0.6
1.2
1.5
10m 100m 1 10
0.5
1.0
110
1
10
IC/IB=200
TYPICAL CHARACTERISTICS
FZT1147A
SPICE PARAMETERS
* ZETEX FZT1147A Spice model Last revision 10/12/96
*
.MODEL FZT1147A PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65
+ BF=500 VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6
+ BR=90 VAR=3.1 IKR=1.2 RE=15e-3 RB=145e-3
+ RC=13e-3 CJE=560e-12
+ CJC=255e-12 VJC=0.6288
+ MJC=0.4048 TF=1.2e-9 TR=13e-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
100µs
Pulse Width
Transient Thermal Resistance
0
Thermal Resistance (°C/W)
D=0.2
D=0.1
D=0.05
D=0.5
Single Pulse
D=t1
tP
t1
tP
1ms 10ms 100ms 1s 10s 100s
Derating curve
Max Power Dissipation - (Watts)
0
0
T - Ambient Temperature (°C)
D = 1
10
20
30
40
50
20 40 60 80 100 120 140 160
1
2
3
4
THERMAL CHARACTERISTICS