ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL VALUE UNIT CONDITIONS.
MIN. TYP. MAX.
Collector-Base
Breakdown Voltage V(BR)CBO -15 -35 V IC=-100µA
Collector-Emitter
Breakdown Voltage VCES -12 -25 V IC=-100µA
Collector-Emitter
Breakdown Voltage VCEO -12 -25 V IC=-10mA *
Collector-Emitter
Breakdown Voltage VCEV -12 -25 V IC=-100µA, VEB=+1V
Emitter-Base Breakdown
Voltage V(BR)EBO -5 -8.5 V IE=-100µA
Collector Cut-Off Current ICBO -0.3 -100 nA VCB=-12V
Emitter Cut-Off Current IEBO -0.3 -100 nA VEB=-4V
Collector Emitter Cut-Off
Current ICES -0.3 -100 nA VCE=-10V
Collector-Emitter
Saturation Voltage VCE(sat) -25
-70
-90
-115
-250
-50
-110
-130
-170
-400
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
IC=-0.5A, IB=-2.5mA*
IC=-1A, IB=-6mA*
IC=-2A, IB=-20mA*
IC=-5A, IB=-50mA*
Base-Emitter
Saturation Voltage VBE(sat) -950 -1050 mV IC=-5A, IB=-50mA*
Base-Emitter Turn-On
Voltage VBE(on) -905 -1000 mV IC=-5A, VCE
=-2V*
Static Forward Current
Transfer Ratio hFE 270
250
200
150
90
450
400
340
245
145
50
850 IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-5A, VCE=-2V*
IC=-10A, VCE=-2V*
IC=-20A, VCE=-2V*
Transition Frequency fT115 MHz IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance Ccb 80 pF VCB=-10V, f=1MHz
Switching Times ton 150 ns IC=-4A, IB=-40mA,
VCC=-10V
toff 220 ns IC=-4A, IB=±40mA,
VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
FZT1147A