ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View ZXM62P03E6TA 7 8mm embossed 3000 units ZXM62P03E6TC 13 8mm embossed 10000 units DEVICE MARKING 2P03 PROVISIONAL ISSUE A - JULY 1999 113 ZXM62P03E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate- Source Voltage V GS 20 V Continuous Drain Current (V GS=-10V; T A=25C)(b) (V GS=-10V; T A=70C)(b) ID -2.6 -2.0 A Pulsed Drain Current (c) I DM -13 A Continuous Source Current (Body Diode)(b) IS -1.9 A I SM -13 A Power Dissipation at T A=25C (a) Linear Derating Factor Pulsed Source Current (Body Diode)(c) PD 1.1 8.8 W mW/C Power Dissipation at T A=25C (b) Linear Derating Factor PD 1.7 13.6 W mW/C Operating and Storage Temperature Range T j:T stg -55 to +150 C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R JA 113 C/W Junction to Ambient (b) R JA 73 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE A - JULY 1999 114 ZXM62P03E6 Max Power Dissipation (Watts) CHARACTERISTICS 100 10 0.1 Thermal Resistance (C/W) DC 1s 100ms 10ms 1ms 100us 1 1 0.1 10 100 Refer Note (b) Refer Note (a) 1 0.5 0 0 20 40 60 100 80 120 Safe Operating Area Derating Curve 140 160 120 Refer Note (b) 60 20 1.5 T - Temperature (C) 80 40 2 -VDS - Drain-Source Voltage (V) Thermal Resistance (C/W) -ID - Drain Current (A) Refer Note (a) D=0.5 D=0.2 D=0.1 D=0.05 0 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Refer Note (a) 100 80 60 D=0.5 40 D=0.2 20 D=0.1 D=0.05 0 0.0001 0.001 0.01 100 Single Pulse 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - JULY 1999 115 ZXM62P03E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs V I D=-250 A, V GS=0V -1 A V DS=-30V, V GS=0V 100 nA V GS= 20V, V DS=0V V I D =-250 A, V DS= V GS V GS=-10V, I D=-1.6A V GS=-4.5V, I D=-0.8A S V DS=-10V,I D=-0.8A -30 -1.0 0.15 0.23 1.1 DYNAMIC (3) Input Capacitance C iss 330 pF Output Capacitance C oss 120 pF Reverse Transfer Capacitance C rss 45 pF Turn-On Delay Time t d(on) 2.8 ns Rise Time tr 6.4 ns Turn-Off Delay Time t d(off) 13.9 ns Fall Time tf 10.3 ns Total Gate Charge Qg 10.2 nC Gate-Source Charge Q gs 1.5 nC Gate Drain Charge Q gd 3 nC V SD -0.95 V T j=25C, I S=-1.6A, V GS=0V T j=25C, I F=-1.6A, di/dt= 100A/ s V DS=-25 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =-15V, I D=-1.6A R G=6.2 , R D=25 (Refer to test circuit) V DS=-24V,V GS=-10V, I D =-1.6A (Refer to test circuit) SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) t rr 19.9 ns Reverse Recovery Charge(3) Q rr 13 nC (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JULY 1999 116 ZXM62P03E6 TYPICAL CHARACTERISTICS 100 100 +150C 10V 8V 7V 6V -VGS -ID - Drain Current (A) -ID - Drain Current (A) +25C 5V 4.5V 4V 10 3.5V 3V 1 10V 8V 7V 6V -VGS 10 5V 4.5V 4V 3.5V 3V 1 2.5V 2.5V 1 0.1 10 0.1 100 Output Characteristics -ID - Drain Current (A) 10 T=150C T=25C 1 2 3 4 5 7 6 1.8 1.6 RDS(on) 1.4 VGS=-10V ID=-1.6A 1.2 1.0 VGS=VDS ID=-250uA 0.8 VGS(th) 0.6 0.4 -100 -VGS - Gate-Source Voltage (V) -ISD - Reverse Drain Current (A) RDS(on) - Drain-Source On-Resistance ( ) 10 VGS=-3V VGS=-4.5V VGS=-10V 0.1 0.1 1 10 0 50 100 150 200 Normalised RDS(on) and VGS(th) v Temperature 100 1 -50 Tj - Junction Temperature (C) Typical Transfer Characteristics 100 Output Characteristics VDS=-10V 1 10 1 -VDS - Drain-Source Voltage (V) 100 0.1 0.1 -VDS - Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) 0.1 100 100 10 1 T=150C T=25C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -ID - Drain Current (A) -VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JULY 1999 117 ZXM62P03E6 -VGS - Gate-Source Voltage (V) TYPICAL CHARACTERISTICS 600 C - Capacitance (pF) Vgs=0V f=1Mhz 500 Ciss Coss Crss 400 300 200 100 0 0.1 1 10 100 10 ID=-1.6A 9 8 7 VDS=-15V VDS=-24V 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 -VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JULY 1999 118 ZXM62P03E6 PROVISIONAL ISSUE A - JULY 1999 119 ZXM62P03E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 DIM A1 Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF e1 1.90 REF L 0 0.037 REF 0.074 REF 10 0 10 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JULY 1999 120