30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P03E6
SUMMARY
V(BR)DSS
DSSDSS
DSS=-30V; RDS(ON)=0.15⍀
ID
DD
D=-2.6A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM62P03E6TA 7 8mm embossed 3000 units
ZXM62P03E6TC 13 8mm embossed 10000 units
DEVICE MARKING
2P03
Top View
113
SOT23-6
PROVISIONAL ISSUE A - JULY 1999
ZXM62P03E6
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
JA 113 °C/W
Junction to Ambient (b) R
JA 73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
114
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -30 V
Gate- Source Voltage VGS
20 V
Continuous Drain Current (VGS=-10V; TA=25°C)(b)
(V
GS=-10V; TA=70°C)(b) ID-2.6
-2.0 A
Pulsed Drain Current (c) IDM -13 A
Continuous Source Current (Body Diode)(b) IS-1.9 A
Pulsed Source Current (Body Diode)(c) ISM -13 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD1.1
8.8 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD1.7
13.6 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
PROVISIONAL ISSUE A - JULY 1999
ZXM62P03E6
0.1 10 100
0.0001 0.1 100
0 80 160
-VDS - Drain-Source Voltage (V)
Safe Operating Area
0.1
10
100
-I
D
- Drain Current (A)
D=0.1
D=0.2
Thermal Resistance (°C/W)
60
D=0.05
0
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (Watts)
2
1.5
0
T - Temperature (°C)
Derating Curve
Refer Note (b)
Single Pulse
D=0.5
Pulse Width (s)
40
80
20
0.01 100.001 1
80
0
0.0001 10000.001 0.01 0.1 1 10
Transient Thermal Impedance
Thermal Resistance (°C/W)
D=0.5
D=0.2
D=0.1
D=0.05 Single Pulse
100
60
120
100
40
20
Refer Note (a)
1
0.5
60 14020 40 100 120
1
1
Refer Note (b) Refer Note (a)
CHARACTERISTICS
DC
1s
100ms
10ms
1ms
100us
Refer Note (a)
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PROVISIONAL ISSUE A - JULY 1999
116
ZXM62P03E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250
A, VGS=0V
Zero Gate Voltage Drain Current IDSS -1
AVDS=-30V, VGS=0V
Gate-Body Leakage IGSS
100 nA VGS=
20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250
A, VDS= VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.15
0.23
VGS=-10V, ID=-1.6A
VGS=-4.5V, ID=-0.8A
Forward Transconductance (3) gfs 1.1 S VDS=-10V,ID=-0.8A
DYNAMIC (3)
Input Capacitance Ciss 330 pF VDS=-25 V, VGS=0V,
f=1MHz
Output Capacitance Coss 120 pF
Reverse Transfer Capacitance Crss 45 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.8 ns
VDD
=-15V, ID=-1.6A
RG=6.2
, RD=25
(Refer to test circuit)
Rise Time tr6.4 ns
Turn-Off Delay Time td(off) 13.9 ns
Fall Time tf10.3 ns
Total Gate Charge Qg10.2 nC VDS=-24V,VGS=-10V,
ID=-1.6A
(Refer to test circuit)
Gate-Source Charge Qgs 1.5 nC
Gate Drain Charge Qgd 3nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.95 V Tj=25°C, IS=-1.6A,
VGS=0V
Reverse Recovery Time (3) trr 19.9 ns Tj=25°C, IF=-1.6A,
di/dt= 100A/
s
Reverse Recovery Charge(3) Qrr 13 nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
ZXM62P03E6
117
0.1 100
147
0.1 10 100 0.2 0.8 1.4
20050-100
0.1 10 100
-VDS - Drain-Source Voltage (V)
Output Characteristics
0.1
100
-I
D
- Drain Current (A)
VDS=-10V
-I
D
- Drain Current (A)
100
10
0.1
-VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
R
DS(on)
- Drain-Source On-Resistance (
)
100
1
0.1
-ID- Drain Current (A)
On-Resistance v Drain Current
-I
D
- Drain Current (A)
100
10
0.1
-VDS - Drain-Source Voltage (V)
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
1.8
1.0
0.4
Tj- Junction Temperature (°C)
Normalised RDS(on) and VGS(th)
v Temperature
-I
SD
- Reverse Drain Current (A)
100
10
0.1
-VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=150°C
T=25°C
+150°C
T=150°C
VGS=-10V
T=25°C
RDS(on)
ID=-1.6A
VGS=VDS
ID=-250uA
VGS(th)
2536
1
0.4 1.00.6 1.2
1
1
1
-VGS
3.5V
3V
2.5V
6V7V8V10V
+25°C
1
110
10
1.2
0.6
0.8
1.4
1.6
1500-50 100
1
VGS=-3V
VGS=-4.5V
5V
4.5V
4V
10V 8V 7V 6V -VGS
5V
4.5V
4V
3.5V
3V
2.5V
VGS=-10V
10
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE A - JULY 1999
TYPICAL CHARACTERISTICS
Basic Gate Charge Waveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
0.1 10 100 0 4 10
-VDS - Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
0
500
C - Capacitance (pF)
ID=-1.6A
-V
GS
- Gate-Source Voltage (V)
10
0
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
VDS=-24V
Ciss
Coss
Crss
Vgs=0V
f=1Mhz
600
200
400
100
300
1
9
8
76
VDS=-15V
7
6
5
4
3
2
1
123 5 89
ZXM62P03E6
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PROVISIONAL ISSUE A - JULY 1999
ZXM62P03E6
119
PROVISIONAL ISSUE A - JULY 1999
ZXM62P03E6
120
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 44 20
Zet ex GmbH Zetex In c. Zet ex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 Münch en Com mack NY 11725 Hing Fong Road, major countries world-wide
German y USA Kwai Fo ng , Hon g K on g
Zet ex plc 1999
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611
Fax: (49) 8 9 45 49 49 49 Fax: (516) 86 4- 76 30 Fax: (852) 24250 494 Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reprod uced for any
purpose or fo rm par t of any or de r or cont ract or be regard ed as a rep re sen ta tio n re l at ing to th e pr od ucts or servic es con cer ne d. The Company reserves the
right to alter without noti ce the spec ification, design, price or conditio ns of supply of any product or service.
PACKAGE DIMENSIONS
A1
2
L
DATUM A
a
C
E
AA2
E1
D
be
e1
PAD LAYOUT DETAILS
DIM Millimetres Inches
Min Max Min Max
A 0.90 1.45 0.35 0.057
A1 0.00 0.15 0 0.006
A2 0.90 1.30 0.035 0.051
b 0.35 0.50 0.014 0.019
C 0.09 0.20 0.0035 0.008
D 2.80 3.00 0.110 0.118
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.10 0.60 0.004 0.002
e 0.95 REF 0.037 REF
e1 1.90 REF 0.074 REF
L 0° 10° 0° 10°
PROVISIONAL ISSUE A - JULY 1999
