MICROSEMI CORP S9E D M@ 61158645 00019494 SLL mnsc 1N4896 thru 1N4915A FEATURES o ZENER VOLTAGE 12.8V e TEMPERATURE COEFFICIENT RANGE: 0.01%/C to 0.001%/C e Np YIELDS MAXIMUM-RMS NOISE FOR ANY BANDWIDTH MAXIMUM RATINGS Junction and Storage Temperatures: 65C to +175C DC Power Dissipation: 400 mW Power Derating: 3.20 mW/C above 50C * ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified S| See ae | Se | EMPE! tepeC | CURRENT TEMPERATURE TEMPERATURE | COEFFICIENT | IMPEDANCE) NOISE, Al NUMBER (Noto 1&5!) (ot 28 6) (Note 31 (Now 4) No mA VOLTS *C + %/C OHMS | uV/v cps 1N4896 0. 0.096 +25 to +100 [O01 400 08 in4g96a | 05 0.198 =55 to +100 | 0.01 400 08 inago7a | 05 | 0009 | ssto aloo | o.n08 io | 08 1N4897A 0.5 . 55 to + . E 1N4898 05 0.019 +25 to-+100 | 0.002 400 08 in4gssa | 05 0.040 55 to +100 | 0.002 400 08 1N4899 05 0.010 #25t0 +10 | 0.001 400 08 1N4899A_| 05 0.020 55 to + 1N4900 1.0 0.096 +25 to +100 0.01 200 04 IN4900A | 1.0 0.198 ~55 to +100 | 0.01 200 Od Wael |b | tas | Seer |e | | in4g01a_| 1.0 0.0 55 to + 1N4902 10 0.019 +25 to +100 | 0.002 200 Od 1N4902A | 1.0 0.040 55 to +100 | 0.002 200 04 1N4903 1.0 0.010 +25 to +100 0.001 200 04 1N4903A 1.0 0.020 55 to +100 0.001 200 0.4 1N4904 2.0 0.096 +25 t0 4100 | 0.01 100 0.25 inago4a | 2.0 0.198 55 to 4100 | 0.01 100 0.25 1N4905 2.0 0.048 +25to +100 | 0.005 100 0.25 IN4905A_| 2.0 0.099 ~55 to +100 | 0.005 100 0.25 1N4906 2.0 0.019 +25 to +100 | 0.002 100 0.25 1N4906A | 70 0.040 =55 to 4100 | 0.002 100 0.25 1N4907 20 0.010 +25 t0 +100 | 0.001 100 0.25 1N4907A_ | 2.0 0.020 55 to +100 | 0.001 100 0.25 1N4908 40 0.096 +25 to +100 | 0.01 50 0.22 1N4908A | 4.0 0.198 55 to +100 | 0.01 50 0.22 1N4909 4.9 0.048 +25 to +100 0.005 50 0.22 1N4909A_ | 4.0 0,099 =55 to +100 | 0.005 50 0.22 1N4910 4.0 0.019 +25 to +100 0.002 50 0.22 IN4910A | 4.0 0.040 55 to +100 | 0.002 50 0.22 1N4911 4.0 0.010 +25 to +100 | 0.001 50 0.22 IN4911A_| 40 0.020 =55 to +100 | 0.001 50 0.22 1N4912 75 0.096 +25 to-+100 [0.01 25 0.20 1N4912A | 75 0.198 =55 to +100 | 0.01 25 0.20 1N4913 75 0.048 +25 to+100 | 0.005 25 0.20 1N4913A_| 75 0.099 =55 to +100 | 0.005 25 0.20 1N4914 75 0.019 +25 to +100 | 0.002 25 0.20 inagi4a | 75 0.040 55 to +100 | 0.002 25 0.20 1N4915 75 0.010 +25 to+100 | 0.001 25 0.20 1N4915A_ | 75 0.020 55 to4100 | 0.001 25 0.20 *JEDEC Registered Data. MICROSEMI CORP SIE D MM 6115865 0001945 4Tte me MsC 1N4896 thru 1N4915A NOTE 1. Nominal voltage for al} types is 12.8 Volts 5%. NOTE 2 Referred to as the box measurement method, the AVz7 is the maximum voltage variance that will occur as the voltage is scanned thru all temperatures between the temperature range limits. NOTE 3 The effective temperature coefficients are tabulated in %/C pri- marily for information only since temperature compensated diodes inherently have a non-linear voltage-temperature characteristic. NOTE 4 The dynamic Zener impedance Zz7 is derived from the resulting a.c. voltage developed when a 60 cps, rms a.c. current equal to 10% of the D.C. Zener current I,y is superimposed on Iz- NOTE & Voltage measurements to be performed 15 seconds after application of DC current. NOTE 6 To specify radiation hardened devices, use RH prefix instead of IN, i.e. RH4896A instead of IN4896A. NOTE 7 Consult factory for TX, TXV or JANS equivalent SCDs. Noise Density (Np) is specified in Microvolts-rms per square root cycle. Actual measurement is performed using a | to 3 KH; frequency bandpass at the Zener test current(Iz+) @ 25C ambient temperature. SHIELDED {) POWER (+) TEST SUPPLY CIRCUIT { | (LOW NOISE I} SOURCE) Le BLOCKING CAPACITOR FILTER fo= 2 KHz BP = 1 103KHz FIGURE 2 NOISE DENSITY MEASUREMENT CIRCUIT 400 300 \ 200 \ 100 N N RATED POWER DISSIPATION - mW 0 2% 0 % 100 12s 150 5 20 T_, Lead temperature (C) 3/8 from body FIGURE 3 POWER DERATING CURVE