Switching and General Purpose Transistors 2N248 1 (siticon) 2N2481 USN/JAN 2N2481 HI-REL ing applications. CASE 22 (TO-18) MAXIMUM RATINGS Collector connected to case Vero =I15V fr = 450 MHz Typ NPN silicon annular transistor for high-speed switch- Rating Symbol Value Unit Coliector-Base Voltage Vos 40 Vde Collector-Emitter Voltage Vero 15 Vde Emitter-Base Voltage VEB 5 vde Total Device Dissipation Pp 0.36 Watt @ 25C Ambient Temperature (Derate 2.06 mwW/C above 25C) Total Device Dissipation Ph 1.2 Watts @ 25C Case Temperature (Derate 6.9 mW/C above 25C) Junction Temperature Ty 200 % Storage Temperature Tytg -65 to+ 200 c 8-144