TGF2023-01 - TriQuint Semiconductor

TGF2023-01

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Dec 2008 © Rev A

Datasheet subject to change without notice.

Primary Applications

Product Description

Key Features

Measured Performance

6 Watt Discrete Power GaN on SiC HEMT

Bias conditions: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V Typical

•Chip Dimensions: 0.82 x 0.66 x 0.10 mm

•Technology: 0.25 um Power GaN on SiC

•Bias: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V

Typical

•15 dB Nominal Power Gain

•55% Maximum PAE

•> 38 dBm Nominal Psat

•Frequency Range: DC - 18 GHz

•Space

•Military

•Broadband Wireless

The TriQuint TGF2023-01 is a discrete 1.25 mm

GaN on SiC HEMT which operates from DC-18

GHz. The TGF2023-01 is designed using

TriQuint’s proven 0.25um GaN production process.

This process features advanced field plate

techniques to optimize microwave power and

efficiency at high drain bias operating conditions.

The TGF2023-01 typically provides > 38 dBm of

saturated output power with power gain of 15 dB.

The maximum power added efficiency is 55%

which makes the TGF2023-01 appropriate for high

efficiency applications.

Lead-free and RoHS compliant

TGF2023-01

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Dec 2008 © Rev A

Table II

Recommended Operating Conditions

Table I

Absolute Maximum Ratings 1/

2/26 dBmInput Continuous Wave PowerPin

7 mAGate CurrentIg

2/1.25 ADrain CurrentId

-10 to 0 VGate Voltage RangeVg

2/40 VDrain VoltageVd

NotesValueParameterSymbol

-3 VGate VoltageVg

375 mADrain Current under RF DriveId_Drive

125 mADrain CurrentIdq

28 - 40 VDrain VoltageVd

ValueParameterSymbol

1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed

under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect

device lifetime. These are stress ratings only, and functional operation of the device at these

conditions is not implied.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the

maximum power dissipation listed in Table IV.

TGF2023-01

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Dec 2008 © Rev A

Table III

RF Characterization Table 1/

Bias: Vd = 32 V & 40 V, Idq = 125 mA, Vg = - 3V Typical

1/ Values in this table are measured on a 1.25 mm unit GaN on SiC cell at 3.5 GHz

2/ Large signal equivalent GaN on SiC output network

3/ Optimum load impedance for maximum power or maximum PAE at 3.5 GHz. The series resistance

and inductance (Rd and Ld) shown in the Figure on page 6 is excluded

%5755Power Added EfficiencyPAE

0.318 ‚100.40.354 ‚87.3

Load Reflection CoefficientГL 3/

pF/mm0.4610.444Parallel CapacitanceCp 2/

Efficiency Tuned:

dBm35.536Saturated Output PowerPsat

dB19.519.5Power GainGain

Ω·mm158.1190.2Parallel ResistanceRp 2/

pF/mm0.3140.263Parallel CapacitanceCp 2/

0.554 ‚43.6

82.75

38.5

Vd = 40 V

0.509 ‚52.8

Load Reflection CoefficientГL 3/

Ω·mm68.58Parallel ResistanceRp 2/

dB15Power GainGain

%47Power Added EfficiencyPAE

dBm37.5Saturated Output PowerPsat

Power Tuned:

UNITSVd = 32 VPARAMETERSYMBOL

TGF2023-01

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Dec 2008 © Rev A

Table IV

Power Dissipation and Thermal Properties 1/

1/ Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10mil CuMo Carrier Plate

2/ For a median life of 2E+6 hours, Power Dissipation is limited to

Pd(max) = (150 ºC – Tbase ºC)/θjc.

3/ Channel operating temperature will directly affect the device median time to failure (MTTF). For

maximum life, it is recommended that channel temperatures be maintained at the lowest possible

levels.

4/ Channel temperatures at high drain voltages can be excessive, leading to reduced MTTF. Operation

at reduced baseplate temperatures and/or pulsed RF modulation is recommended.

-65 to 150 ºCStorage Temperature

320 ºC30 SecondsMounting Temperature

4/θjc = 16.0 (ºC/W)

Tchannel = 150 ºC

Tm = 2.0E+6 Hrs

Vd = 40 V

Id = 375 mA

Pout = 38.5 dBm

Pd = 7.9 W

Tbaseplate = 24 ºC

Thermal Resistance, θjc

Under RF Drive

θjc = 16.0 (ºC/W)

Tchannel = 150 ºC

Tm = 2.0E+6 Hrs

Vd = 40 V

Id = 125 mA

Pd = 5 W

Tbaseplate = 70 ºC

Thermal Resistance, θjc

2/ 3/Pd = 5 W

Tchannel = 150 ºC

Tm = 2.0E+6 Hrs

Tbaseplate = 70 ºCMaximum Power Dissipation

NotesValueTest ConditionsParameter

Power De-rating Curve

-60 -40 -20 0 20 40 60 80 100 120 140 160

Baseplate Temp (C)

Power Dissipated (W)

Tm= 2.0E+6 Hrs

TGF2023-01

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Dec 2008 © Rev A

Measured Data

Bias conditions: Vd = 32 V & 40 V, Idq = 125 mA, Vg = -3 V Typical

Power tuned data at 3.5GHz

For power tuned devices at 3.5GHz:

1.25mm device input matched for maximum gain & output load is:

Vd=40V: Rp = 66.23Ω, Cp = 0.555 pF, Γ= 0.354, θ= 87.3°

Vd=32V: Rp = 54.86Ω, Cp = 0.576 pF, Γ= 0.318, θ= 100.4°

Efficiency tuned data at 3.5GHz

For efficiency tuned devices at 3.5GHz:

1.25mm device input matched for maximum gain & output load is:

Vd=40V: Rp = 152.2Ω, Cp = 0.329 pF, Γ= 0.554, θ= 43.6°

Vd=32V: Rp = 126.5Ω, Cp = 0.393 pF, Γ= 0.509, θ= 52.8°

TGF2023-01

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Dec 2008 © Rev A

Unit GaN cell

Reference Plane

Drain

Lg Rg Cdg Rd Ld

Rdg

Gate

Rgs

Cgs

gm vi

Rds Cds

Source

Rp, Cp

Linear Model for 1.25 mm Unit GaN Cell

Ω4780070500Rgd

Ω19501550Rgs

nH0.04850.048Ld

nH-0.013-0.0135Lg

nH0.01470.0148Ls

pS3.574.11Tau

pF0.06460.053Cgd

Ω319.2373.7Rds

pF0.2630.239Cds

Ω0.230.24Ri

pF1.501.52Cgs

S0.1380.134gm

Ω0.330.31Rd

Ω0.070.08Rs

Ω0.560.56Rg

UNITS

Vd = 32V

Idq = 19mA

Vd = 40V

Idq = 19mA

MODEL

PARAMETER

TGF2023-01

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

Mechanical Drawing

Ground is backside of die

Chip edge to bond pad dimensions are shown to center of pad

Die x,y size tolerance: +/- 0.050

Thickness: 0.100

Units: millimeters

0.154 x 0.230VdBond Pad #2

0.154 x 0.115VgBond Pad #1

TGF2023-01

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

Assembly Notes

Ordering Information

GaN on SiC DieTGF2023-01

Package StylePart

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Organic attachment (i.e. epoxy) can be used in low-power applications.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

Reflow process assembly notes:

• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.

• An alloy station or conveyor furnace with reducing atmosphere should be used.

• Do not use any kind of flux.

• Coefficient of thermal expansion matching is critical for long-term reliability.

• Devices must be stored in a dry nitrogen atmosphere.

Interconnect process assembly notes:

• Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.

• Force, time, and ultrasonics are critical bonding parameters.

• Aluminum wire should not be used.

• Devices with small pad sizes should be bonded with 0.0007-inch wire.