MJ10023 Silicon NPN Transistor Power Darlington w/Base-Emitter Speed-up Diode Description: The MJ10023 is a silicon NPN Darlington transistor in a TO3 type package designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line-operated switchmode applications. Applications: D Switching Regulators D AC and DC Motor Controls D Inverters D Solenoid and Relay Drivers Features: D Continuous Collector Current: IC = 40A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 400 - - V - - 0.25 mA TC = +150C - - 5.0 mA OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 100mA, IB = 0 ICEV VCEV = 600V, VBE(off) = 1.5V Collector Cutoff Current ICER VCEV = 600V, RBE = 50, TC = +100C - - 5.0 mA Emitter Cutoff Current IEBO VBE = 2V, IC = 0 - - 175 mA hFE IC = 10A, VCE = 5V 60 - 600 IC = 20A, IB = 1A - - 2.2 V - - 2.5 V IC = 40A, IB = 5A - - 5.0 V IC = 20A, IB = 1.2A - - 2.5 V - - 2.5 V - - 5.0 V 150 - 600 pF - - 0.2 s - - 1.5 s - - 2.5 s - - 1.1 s ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) TC = +100C Base-Emitter Saturation Voltage VBE(sat) TC = +100C Diode Forward Voltage Vf IF = 20A Dynamic Characteristic Output Capacitance Cob VCB = 10V, IE = 0, ftest = 1kHz Switching Characteristics Delay Time td Rise Time tr Storage Time ts Fall Time tf VCC = 250V, IC = 20A, IB1 = 1A, VBE(off) = 5V, tp = 50s, Duty Cycle 2% Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. Circuit Outline C B [ 100 [ 15 E .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case