APTML102UM09R004T3AG
APTML102UM09R004T3AG – Rev 0 November, 2009
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3
16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4
Pins 13/14 ; 29/30 ; 31/32 must be shorted together
Absolute maximum ratings (per leg)
* Output current per leg must be limited to 67A @ TC=25°C and 47A @ TC=80°C to not exceed the shunt specification. In addition
the current capability must be limited to 75A on pins 13/14 to not exceed current capability of the pins.
n In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 100 V
Tc = 25°C 154*
ID Continuous Drain Current Tc = 80°C 115*
IDM Pulsed Drain current 430 A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 10 mΩ
PD Maximum Power Di ssi pation n T
c = 25°C 480 W
IAR Avalanch e current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000 mJ
Application
Electronic load dedicated to power supplies and
battery discharge testing
Features
Linear MOSFET
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
Direct mounting to heatsink (isolated package)
easy series and parallels combinations for power and
voltage improvements
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Linear MOSFET
Power Module
VDSS = 100V
RDSon = 09mΩ typ @ Tj = 25°C
ID = 154A* @ Tc = 25°C
APTML102UM09R004T3AG
APTML102UM09R004T3AG – Rev 0 November, 2009
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics (per leg)
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 100V Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 69.5A 9 10
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 2 4 V
IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA
Dynamic Characteristics (per leg)
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 9875
Coss Output Capacitance 3940
Crss Reverse Transfer Capacitan ce
VGS = 0V
VDS = 25V
f = 1MHz 1470 pF
Shunt Electrical Characteristics (per leg)
Symbol Characteristic Min Typ Max Unit
Rsh Resistance value 4.4 mΩ
Tsh Tolerance 2 %
TC=25°C 20
Psh Load capacity TC=80°C 10
W
TC=25°C 67
Ish Current capacity TC=80°C 47 A
Temperature sensor PTC
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 1980 2020 Ω
R100/R25 Resistance ratio Tamb=100°C & 25°C 1.676 1.696 1.716
R-55/R25 Resistance ratio Tamb=-55°C & 25°C 0.48 0.49 0.50
B Temperature coefficient 7900 ppm/K
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal Resistance MOSFET (per leg) 0.26 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100 °C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 110 g
APTML102UM09R004T3AG
APTML102UM09R004T3AG – Rev 0 November, 2009
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SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Typical Performance Curve (linear mode) (per leg)
Drain Current vs Drain source voltage
1
10
100
0 20406080100
Drain Source Voltage (V)
Drain Cur r e n t (A)
T
J
=125°C
Power vs Drain source voltage
200
250
300
350
400
0 25 50 75 100
Drain Source Voltage (V)
Dissipated Power (W)
T
J
=125°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covered by one o r more of U.S patents 4,8 95,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,7 86 5,256,583 4,748,103
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