MBR60100WT Technical Data Data Sheet N0207, Rev. B MBR60100WT SCHOTTKY RECTIFIER Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb - Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request TO-247AD Circuit Diagram Applications Switching power supply Converters Free-Wheeling diodes Reverse battery protection Center tap configuration Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Condition VRRM VRWM VR - Average Rectified Forward Current IF (AV) Peak One Cycle Non-Repetitive Surge Current(Per Leg) 50% duty cycle @Tc=135C, rectangular wave form IFSM 8.3ms, Half Sine pulse Max. Units 100 V 30(Per Leg) 60(Per Device) A 280 A Electrical Characteristics: Characteristics VF1 Typ. Max. Units @ 30A, Pulse, TJ = 25 0.85 0.90 V VF2 @ 30A, Pulse, TJ = 125 0.76 0.81 V Reverse Current (Per Leg)* IR1 @VR = rated VR ,TJ = 25 0.01 1.0 mA IR2 @VR = rated VR ,TJ = 125 8 20 mA Junction Capacitance(Per Leg) CT @VR = 5V, TC = 25, fSIG = 1MHz - 400 1200 pF - 10,000 V/s Forward Voltage Drop (Per Leg)* Voltage Rate of Change Symbol dv/dt Condition * Pulse width < 300 s, duty cycle < 2% China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com MBR60100WT Technical Data Data Sheet N0207, Rev. B Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units TJ Tstg RJC -55 to +150 -55 to +150 C C DC operation - 2.0 C/W RJA DC operation 50 C/W 0.50 C/W 6.28 g Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case Typical Thermal Resistance Junction to Ambient Typical Thermal Resistance Case to Heat Sink Approximate Weight Case Style RCS wt Mounting surface,smooth and greased TO-247AD Ratings and Characteristics Curves 10000 Junction Capacitance (PF) TJ=125 1000 TJ=25 100 TJ=25 10 0 5 10 15 20 25 30 35 40 Re ve r s e V oltage (V ) Fig.1-Typical Junction Capacitance Fig.2-Typical Reverse Characteristics TJ=125 TJ=25 Fig.3-Typical Instantaneous Forward Voltage Characteristics China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com MBR60100WT Technical Data Data Sheet N0207, Rev. B Mechanical Dimensions TO-247AD Millimeters SYMBOL MIN. 4.80 2.20 1.90 1.10 1.80 2.80 0.50 20.30 A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 P P1 P2 Q S T U 15.45 19.42 3.50 7.1 6.05 TYP. 5.00 2.41 2.00 1.20 2.00 3.00 0.60 21.00 16.55 1.20 15.80 13.30 5.00 2.50 5.44 19.92 4.13 3.60 MAX. 5.20 2.61 2.10 1.40 2.20 3.20 0.75 21.20 16.00 20.70 2.50 5.80 6.15 10.00 6.20 3.70 7.40 6.25 Ordering Information: Device MBR60100WT Package Shipping TO-247AD(Pb-Free) 25pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. Tube Specification Marking Diagram Where XXXXX is YYWWL MBR 60 100 WT SSG YY WW L = Device Type = Forward Current (60A) = Reverse Voltage (100V) = Configuration = SSG = Year = Week = Lot Number CautionsMolding resin Epoxy resin UL:94V-0 China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com MBR60100WT Technical Data Data Sheet N0207, Rev. B DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com