Chip Silicon Rectifier
FFM101-L THRU FFM107-L
Fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gr am
(V) (V) (V) (V) (nS) (oC)
FFM101 F11 50 35 50
FFM102 F12 100 70 100
FFM103 F13 200 140 200
FFM104 F14 400 280 400
FFM105 F15 600 420 600 250
FFM106 F16 800 560 800
FFM107 F17 1000 700 1000
-55 to +150
Operating
temperature
VRRM
*1 VRMS
*2 VR
*3 VF
*4 TRR
*5
500
150
SYMBOLS MARKING
CODE
1.3
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT
Forward rectified current Ambient temperature = 55oCIO1.0 A
Forward surge current 8.3ms single half sine-wave superimposed on
rate load (JEDEC methode) IFSM 30 A
VR = VRRM TA = 25oC5.0 uA
VR = VRRM TA = 100oC100 uA
Thermal resistance Junction to ambient RqJA 32 oC / w
Diode junction capacitance f=1MHz and applied 4vDC reverse voltage CJ15 pF
Storage temperature TSTG -55 +150 oC
Reverse current IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
Formosa MS
0.205(5.2)
0.189(4.8) 0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-L
0.1
1.0
.01
10
50
RATING AND CHARACTERISTIC CURVES (FFM101-L THRU FFM107-L)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0.2
0.4
0.6
0.8
1.0
1.2
35
30
25
20
15
10
5
0
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
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1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
.01 .05 .1 .5 1 5 10 50 100
D.U.T.
.6 .8 1.0 1.2 1.4 1.6 1.8 2.0
3.0
AMBIENT TEMPERATURE ( C)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
10
NONINDUCTIVE
50
NONINDUCTIVE
WW
Tj=25 C
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
10
0
20
30
40
50
NUMBER OF CYCLES AT 60Hz
1 10 5 50 100
Tj=25 C 8.3ms Single Half
Sine Wave
JEDEC method
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0 20 40 60 80 100 120 140 160 180 200
0
