©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC807/BC808
PNP Epitaxial Silicon Transistor
Absolute Maximu m Rating s Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC807
: BC808 -50
-30 V
V
VCEO Collector-Emitter Voltage
: BC807
: BC808 -45
-25 V
V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -800 mA
PCCollector Power Dissipation -310 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ . Max. Units
BVCEO Collector-Emitter Breakdown Voltage
: BC807
: BC808
IC= -10mA, IB=0 -45
-25 V
V
BVCES Collector-Emitter Breakdown Voltage
: BC807
: BC808
IC= -0.1mA, VBE=0 -50
-30 V
V
BVEBO Emitter-Base Breakdown V oltage IE= -0.1mA, IC=0 -5 V
ICES Collector Cut-off Current VCE= -25V, VBE=0 -100 nA
IEBO Emitter Cut-off Current VEB= -4V, IC=0 -100 nA
hFE1
hFE2
DC Current Gain VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA 100
60 630
VCE (sat) Collector-Emitter Satu ration Voltage IC= -500mA, IB= -50mA -0.7 V
VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA - 1.2 V
fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA
f=50MHz 100
MHz
Cob Output Capacitance VCB= -10V, f=1MHz 12 pF
BC807/BC808
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC817/BC818
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC807/BC808
hFE Classification
Marking Code
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60- 100- 170-
Type 807-16 807-25 807-40 808-16 808-25 808-40
Marking 9FA 9FB 9FC 9GA 9GB 9GC
©2002 Fairchild Semiconductor Corporation
BC807/BC808
Rev. A2, August 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Input Output Capacitance
-0 -1 -2 -3 -4 -5
-0
-100
-200
-300
-400
-500
PT = 600mW
I
B
= - 3.0mA
I
B
= - 2.0mA
I
B
= - 3.5mA
IB = - 1.0mA
I
B
= - 1.5mA
IB = - 0.5mA
I
B
= - 4.0mA
I
B
= - 2.5mA
I
B
= - 4.5mA
I
B
= - 5.0mA
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0 -10 -20 -30 -40 -50
-0
-4
-8
-12
-16
-20
PT = 600mW
IB = - 80
µ
A
IB = - 70
µ
A
IB = - 60
µ
A
IB = - 50
µ
A
IB = - 40
µ
A
I
B
= - 30µA
IB = - 20µA
I
B
= - 10
µ
A
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000 PULSE
- 1.0V
VCE = - 2.0V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
PULSE
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
-0.1
-1
-10
-100
-1000
VCE = -1V
PULSE
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
Cib
f = 1.0MHz
Cob
Cib, Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
©2002 Fairchild Semiconductor Corporation
BC807/BC808
Rev. A2, August 2002
Typical Characteristics (Continued)
Figure 7. Current Gain Bandwidth Product
-1 -10 -100
10
100
1000
VCE = -5.0V
fT[MHz], GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Package Dimensions
BC807/BC808
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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CORPORATION.
As used herein:
1. Life support devices or systems are devic es or syst em s
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
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