©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC807/BC808
PNP Epitaxial Silicon Transistor
Absolute Maximu m Rating s Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC807
: BC808 -50
-30 V
V
VCEO Collector-Emitter Voltage
: BC807
: BC808 -45
-25 V
V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -800 mA
PCCollector Power Dissipation -310 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ . Max. Units
BVCEO Collector-Emitter Breakdown Voltage
: BC807
: BC808
IC= -10mA, IB=0 -45
-25 V
V
BVCES Collector-Emitter Breakdown Voltage
: BC807
: BC808
IC= -0.1mA, VBE=0 -50
-30 V
V
BVEBO Emitter-Base Breakdown V oltage IE= -0.1mA, IC=0 -5 V
ICES Collector Cut-off Current VCE= -25V, VBE=0 -100 nA
IEBO Emitter Cut-off Current VEB= -4V, IC=0 -100 nA
hFE1
hFE2
DC Current Gain VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA 100
60 630
VCE (sat) Collector-Emitter Satu ration Voltage IC= -500mA, IB= -50mA -0.7 V
VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA - 1.2 V
fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA
f=50MHz 100
MHz
Cob Output Capacitance VCB= -10V, f=1MHz 12 pF
BC807/BC808
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC807/BC808
hFE Classification
Marking Code
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60- 100- 170-
Type 807-16 807-25 807-40 808-16 808-25 808-40
Marking 9FA 9FB 9FC 9GA 9GB 9GC
©2002 Fairchild Semiconductor Corporation
BC807/BC808
Rev. A2, August 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Input Output Capacitance
-0 -1 -2 -3 -4 -5
-0
-100
-200
-300
-400
-500
PT = 600mW
I
B
= - 3.0mA
I
B
= - 2.0mA
I
B
= - 3.5mA
IB = - 1.0mA
I
B
= - 1.5mA
IB = - 0.5mA
I
B
= - 4.0mA
I
B
= - 2.5mA
I
B
= - 4.5mA
I
B
= - 5.0mA
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0 -10 -20 -30 -40 -50
-0
-4
-8
-12
-16
-20
PT = 600mW
IB = - 80
µ
A
IB = - 70
µ
A
IB = - 60
µ
A
IB = - 50
µ
A
IB = - 40
µ
A
I
B
= - 30µA
IB = - 20µA
I
B
= - 10
µ
A
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000 PULSE
- 1.0V
VCE = - 2.0V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
PULSE
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
-0.1
-1
-10
-100
-1000
VCE = -1V
PULSE
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
Cib
f = 1.0MHz
Cob
Cib, Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
©2002 Fairchild Semiconductor Corporation
BC807/BC808
Rev. A2, August 2002
Typical Characteristics (Continued)
Figure 7. Current Gain Bandwidth Product
-1 -10 -100
10
100
1000
VCE = -5.0V
fT[MHz], GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Package Dimensions
BC807/BC808
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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when properly used in accordance with instructions for use
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device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Advance Information Formative or In
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