SD2933-05 RF power transistor HF/VHF/UHF N-channel MOSFETs Features Gold metallization Excellent thermal stability Common source configuration POUT = 300 W min. with 20 dB gain @ 30 MHz Thermally enhanced packaging for lower junction temperatures M174 Epoxy sealed Description The SD2933-05 is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up to 150 MHz. It's special low thermal resistance package, makes it ideal for ISM applications where reliability and ruggedness are critical factors. Figure 1. Pin connection 4 1 5 1. Drain Table 1. 3 2 2. Source 4. Source 3. Gate 5. Source Device summary Order code Marking Package Packaging SD2933-05 SD2933 M177 Plastic tray July 2009 Doc ID 15816 Rev 2 1/13 www.st.com 13 Contents SD2933-05 Contents 11 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/13 Doc ID 15816 Rev 2 SD2933-05 Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 C) Symbol V(BR)DSS VDGR VGS ID PDISS TJ EAS EAR (1) TSTG 1. 1.2 Parameter Value Unit Drain source voltage 130 V Drain-gate voltage (RGS = 1 M) 125 V Gate-source voltage 20 V Drain current 40 A Power dissipation 648 W Max. operating junction temperature 200 C Avalanche energy, single pulse (ID = 60 A) 1500 mJ 50 mJ -65 to +150 C Avalanche energy, repetitive Storage temperature Repetitive rating: Pulse width limited by maximum junction temperature Repetitive avalanche causes additional power losses that can be calculated as: PAV = EAR * f Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Doc ID 15816 Rev 2 Value Unit 0.27 C/W 3/13 Electrical characteristics 2 SD2933-05 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static Symbol V(BR)DSS(1) VGS = 0 V Test conditions Min IDS = 200 mA 130 Typ Max Unit V IDSS VGS = 0 V VDS = 50 V 100 A IGSS VGS = 20 V VDS = 0 V 500 nA VGS(Q) VDS = 10 V ID = 250 mA 3.0 V VDS(ON) VGS = 10 V ID = 20 A 3 V gFS VDS = 10 V ID = 10 A CISS VGS = 0 V VDS = 50 V f = 1 MHz 1000 pF C OSS VGS = 0 V VDS = 50 V f = 1 MHz 372 pF CRSS VGS = 0 V VDS = 50 0 V f = 1 MHz 29 pF 2.5 10 mho 1. TJ = +150 C 2.2 Dynamic Table 5. Dynamic Symbol POUT VDD = 50 V IDQ = 250 mA GPS VDD = 50 V IDQ = 250 mA POUT = 300 W f = 30 MHz hD VDD = 50 V f = 30 MHz Min Typ 300 400 20 23.5 IDQ = 250 mA POUT = 300 W f = 30 MHz 50 VDD = 50 V IDQ = 250 mA POUT = 300 W f = 30 MHz Load mismatch All phase angles 3:1 Table 6. 4/13 Test conditions Max 65 W dB - % VSWR Gfs sorts Marking Min. Max. C 12 12.99 D 13 13.99 E 14 14.99 Doc ID 15816 Rev 2 Unit SD2933-05 3 Impedance data Impedance data Figure 2. Impedance data D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S Table 7. Impedance data Freq ZIN () ZDL () 30 MHz 1.8 - j 0.2 2.8 + j 2.3 108 MHz 1.9 - j 0.2 1.6 + j 1.4 175 MHz 1.9 - j 0.3 1.5 + j 1.6 Doc ID 15816 Rev 2 5/13 Typical performance SD2933-05 4 Typical performance Figure 3. Capacitance vs drain-source voltage Figure 4. 10000 Drain current vs gate voltage 15 Id, Drain Current (A) Capacitance (pF) f= 1 MHz Ciss 1000 Coss 100 Crss Vdd=10V Tc = + 80oC 10 Tc = + 25oC 5 Tc = - 20oC 0 10 0 10 20 30 40 1 50 1.5 2 Gate-source voltage vs case temperature Figure 6. 3 3.5 4 Maximum thermal resistance s case temperature 1.15 1.1 0.33 Id= 12 A Id= 10 A 1.05 0.32 Id= 7 A Id= 5 A Id= 15 A 1 0.95 Id=.1 A Id= 4 A 0.9 RTH(j-c) (C/W) Vgs, GATE-SOURCE VOLTAGE (NORMALIZED) Figure 5. 2.5 Vgs, Gate-Source Voltage (V) Vds, Drain Source Voltage (V) 0.31 0.3 0.29 0.28 Id= 3 A Vdd= 10 V 0.27 Id= 2 A 0.85 Id= 1 A 0.26 Id=.25 A 25 30 0.8 -25 0 25 50 75 35 40 45 50 55 60 65 70 75 80 85 Tc, CASE TEMPERATURE (C) 100 Tc, CASE TEMPERATURE (C) Figure 7. Output power vs input power Figure 8. Output power vs input power 500 500 Pout, Output Power (W) Pout, Output Power (W) Tc= 25C Vdd= 50 V 400 300 Vdd= 40 V 200 f= 30 MHz Idq=250mA 100 Tc= 80C 300 200 f= 30 M Hz Idq= 250 mA Vdd= 50 V 100 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 0.3 0.6 0.9 1.2 1.5 Pin, Input Power (W) Pin, Input Power ( W ) 6/13 Tc= -20C 400 Doc ID 15816 Rev 2 1.8 2.1 2.4 2.7 SD2933-05 Figure 9. Typical performance Power gain vs output power Figure 10. Efficiency vs output power 26 80 25 70 Efficiency (%) Power Gain (dB) 24 23 22 21 f= 30 MHz Idq= 250 mA Vdd= 50 V 20 19 60 50 f=30MHz Vdd=50V Idq=250mA 40 30 20 0 18 0 100 200 300 100 400 200 300 400 Pout, Output Power (W) Pout, Output Power (W) Figure 11. Output power vs supply voltage Figure 12. Efficiency vs gate voltage 500 450 f = 30 MHz Idq = 250 mA 350 Pout, OUTPUT POWER (W) Pout, Output Power (W) 400 Pin = 2.6 W Pin = 1.3 W 300 250 200 Pin = 0.65 W 150 100 24 26 28 30 32 34 36 38 40 42 Vdd, Supply Voltage (V) 44 46 48 50 F= 30 MHz Vdd= 50 V Idq= 250 mA Pin= constant 400 Tc= -20C Tc= +25C 300 Tc= +80C 200 100 0 -3 -2 -1 0 1 2 3 Vgs, GATE-SOURCE VOLTAGE (V) Doc ID 15816 Rev 2 7/13 Test circuit 5 SD2933-05 Test circuit Figure 13. Test circuit + 50V - BIAS + - Notes: 1. Dimension at component symbol are reference for component placement. REF. 1008706A 2. Gap between ground & transmission lines are 0.056[1.42] typ 3. Transmission line are not 1:1 scale 4. Input and output transmission line are 50 Ohms Table 8. Components part list Item 8/13 Description C1,C9 0.01 F / 500 V surface mount ceramic chip capacitor C2, C3 750 pF ATC 700B surface mount ceramic chip capacitor C4 300 pF ATC 700B surface mount ceramic chip capacitor C5,C10,C11,C14,C1 10000 pF ATC 200B surface mount ceramic chip capacitor C6 510 pF ATC 700B surface mount ceramic chip capacitor C7 300 pF ATC 700B surface mount ceramic chip capacitor C8 175-680 pF type 46 standard trimmer capacitor C12 47 F / 63 V aluminum electrolytic radial lead capacitor C13 1200 pF ATC 700B surface mount ceramic chip capacitor C15 100 F / 63 V aluminum electrolytic radial lead capacitor R1,R3 1 K Ohm 1 W surface mount chip resistor R2 560 Ohm 2 W wire-wound axils lead resistor T1 HF 2-30 MHz surface mount 9:1 transformer T2 RG - 142B/U 50 Ohm coaxial cable OD = 0.165[4.18] L 15"[381.00] covered L1 1 3/4 turn air-wound 16 AWG ID = 0.219 [5.56] poly-coated magnet wire L2 1 3/4 turn air-wound 12 AWG ID = 0.250 [6.34] bus bar wire RFC1, RFC2 3 turns 14 AWG wire through fair rite toroid FB1 Surface mount EMI shield bead FB2 Toroid PCB Ultralam 2000. 0.030" thk, r = 2.55, 2 Oz ED Cu both sides Doc ID 15816 Rev 2 SD2933-05 6 Circuit layout Circuit layout Figure 14. 30 MHz test circuit photometer Figure 15. 30 MHz test circuit Doc ID 15816 Rev 2 9/13 Package mechanical data 7 SD2933-05 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 10/13 Doc ID 15816 Rev 2 SD2933-05 Package mechanical data Table 9. M177 (.550 DIA 4/L N/HERM W/FLG) mechanical data mm. Inch Dim. Min Typ Max Min Typ Max A 5.72 5.97 0.225 0.235 B 6.73 6.96 0.265 0.275 C 21.84 22.10 0.860 0.870 D 28.70 28.96 1.130 1.140 E 13.84 14.10 0.545 0.555 F 0.08 0.18 0.003 0.007 G 2.49 2.74 0.098 0.108 H 3.81 4.32 0.150 0.170 I 7.11 0.280 J 27.43 28.45 1.080 1.120 K 15.88 16.13 0.625 0.635 Controllingension: Dim Inches 1011012D Figure 16. Package dimensions Controlling dimensions: inches Doc ID 15816 Rev 2 1011012D 11/13 Revision history 8 SD2933-05 Revision history Table 10. 12/13 Document revision history Date Revision Changes 04-Jun-2009 1 First release 08-Jul-2009 2 Updated V(BR)DSS voltage value from 125 V to 130 V on Table 2 on page 3 and Table 4 on page 4 Doc ID 15816 Rev 2 SD2933-05 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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