July 2009 Doc ID 15816 Rev 2 1/13
13
SD2933-05
RF power transistor HF/VHF/UHF N-channel MOSFETs
Features
Gold metallization
Excellent thermal stability
Common source configuration
POUT = 300 W min. with 20 dB gain @ 30 MHz
Thermally enhanced packaging for lower
junction temperatures
Description
The SD2933-05 is a gold metallized N-channel
MOS field-effect RF power transistor. It is
intended for use in 50 V dc large signal
applications up to 150 MHz. It’s special low
thermal resistance package, makes it ideal for
ISM applications where reliability and ruggedness
are critical factors.
Figure 1. Pin connection
M174
Epoxy sealed
1. Drain
2. Source
3. Gate
4. Source
5. Source
41
5
2
3
Table 1. Device summary
Order code Marking Package Packaging
SD2933-05 SD2933 M177 Plastic tray
www.st.com
Contents SD2933-05
2/13 Doc ID 15816 Rev 2
Contents
11 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
SD2933-05 Electrical data
Doc ID 15816 Rev 2 3/13
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (TCASE = 25 °C)
Symbol Parameter Value Unit
V(BR)DSS Drain source voltage 130 V
VDGR Drain-gate voltage (RGS = 1 MΩ) 125 V
VGS Gate-source voltage ± 20 V
IDDrain current 40 A
PDISS Power dissipation 648 W
TJMax. operating junction temperature 200 °C
EAS Avalanche energy, single pulse (ID = 60 A) 1500 mJ
EAR(1)
1. Repetitive rating: Pulse width limited by maximum junction temperature
Repetitive avalanche causes additional power losses that can be calculated as: PAV = EAR * f
Avalanche energy, repetitive 50 mJ
TSTG Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Junction - case thermal resistance 0.27 °C/W
Electrical characteristics SD2933-05
4/13 Doc ID 15816 Rev 2
2 Electrical characteristics
TCASE = +25 oC
2.1 Static
2.2 Dynamic
Table 4. Static
Symbol Test conditions Min Typ Max Unit
V(BR)DSS(1)
1. TJ = +150 °C
VGS = 0 V IDS = 200 mA 130 V
IDSS VGS = 0 V VDS = 50 V 100 µA
IGSS VGS = 20 V VDS = 0 V 500 nA
VGS(Q) VDS = 10 V ID = 250 mA 2.5 3.0 V
VDS(ON) VGS = 10 V ID = 20 A 3 V
gFS VDS = 10 V ID = 10 A 10 mho
CISS VGS = 0 V VDS = 50 V f = 1 MHz 1000 pF
COSS VGS = 0 V VDS = 50 V f = 1 MHz 372 pF
CRSS VGS = 0 V VDS = 50 0 V f = 1 MHz 29 pF
Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit
POUT VDD = 50 V IDQ = 250 mA f = 30 MHz 300 400
-
W
GPS VDD = 50 V IDQ = 250 mA POUT = 300 W f = 30 MHz 20 23.5 dB
hDVDD = 50 V IDQ = 250 mA POUT = 300 W f = 30 MHz 50 65 %
Load
mismatch
VDD = 50 V IDQ = 250 mA POUT = 300 W f = 30 MHz
All phase angles 3:1 VSWR
Table 6. Gfs sorts
Marking Min. Max.
C 12 12.99
D 13 13.99
E 14 14.99
SD2933-05 Impedance data
Doc ID 15816 Rev 2 5/13
3 Impedance data
Figure 2. Impedance data
Table 7. Impedance data
Freq ZIN (Ω)Z
DL (Ω)
30 MHz 1.8 - j 0.2 2.8 + j 2.3
108 MHz 1.9 - j 0.2 1.6 + j 1.4
175 MHz 1.9 - j 0.3 1.5 + j 1.6
Typical Drain
Load Impedance
Typical Input
Impedance
G
Zin
ZDL
D
S
Typical performance SD2933-05
6/13 Doc ID 15816 Rev 2
4 Typical performance
Figure 3. Capacitance vs drain-source
voltage
Figure 4. Drain current vs gate voltage
0 1020304050
Vds, Drain Source Voltage (V)
10
100
1000
10000
Capacitance (pF)
Ciss
Coss
Crss
f= 1 MHz
1 1.5 2 2.5 3 3.5 4
Vgs, Gate-Source Voltage (V)
0
5
10
15
Id, Drain Current (A)
Vdd=10V Tc = + 80oC
Tc = + 25oC
Tc = - 20 oC
Figure 5. Gate-source voltage vs case
temperature
Figure 6. Maximum thermal resistance s case
temperature
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (ºC)
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
Vgs, GATE-SOURCE VOLTAGE (NORMALIZED)
Vdd= 10 V
Id=.1 A
Id=.25 A
Id= 1 A
Id= 2 A
Id= 3 A
Id= 5 A
Id= 4 A
Id= 7 A
Id= 10 A
Id= 12 A
Id= 15 A
25 30 35 40 45 50 55 60 65 70 75 80 85
Tc, CASE TEMPERATURE (°C)
0.26
0.27
0.28
0.29
0.3
0.31
0.32
0.33
RTH(j-c) (°C/W)
Figure 7. Output power vs input power Figure 8. Output power vs input power
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Pin, Input Power ( W )
0
100
200
300
400
500
Pout, Output Power (W)
Vdd= 50 V
Vdd= 40 V
f= 30 MHz
Idq=250mA
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Pin, Input Power (W)
0
100
200
300
400
500
Pout, Output Power (W)
f= 30 MHz
Idq= 250 mA
Vdd= 50 V
Tc= -20°CTc= 25°C
Tc= 80°C
SD2933-05 Typical performance
Doc ID 15816 Rev 2 7/13
Figure 9. Power gain vs output power Figure 10. Efficiency vs output power
0 100 200 300 400
Pout, Output Power (W)
18
19
20
21
22
23
24
25
26
Power Gain (dB)
f= 30 MHz
Idq= 250 mA
Vdd= 50 V
0 100 200 300 400
Pout, Output Power (W)
20
30
40
50
60
70
80
Effi
c
i
ency
(%)
f=30MHz
Vdd=50V
Idq=250mA
Figure 11. Output power vs supply voltage Figure 12. Efficiency vs gate voltage
24 26 28 30 32 34 36 38 40 42 44 46 48 50
Vdd, Supply Voltage (V)
100
150
200
250
300
350
400
450
Pout, Output Power (W)
f = 30 MHz
Idq = 250 mA Pin = 2.6 W
Pin = 0.65 W
Pin = 1.3 W
-3 -2 -1 0 1 2 3
Vgs, GATE-SOURCE VOLTAGE (V)
0
100
200
300
400
500
Pout, OUTPUT POWER (W)
Tc= -20°C
Tc= +80°C
Tc= +25°C
F= 30 MHz
Vdd= 50 V
Idq= 250 mA
Pin= constant
Test circuit SD2933-05
8/13 Doc ID 15816 Rev 2
5 Test circuit
Figure 13. Test circuit
Table 8. Components part list
Item Description
C1,C9 0.01 µF / 500 V surface mount ceramic chip capacitor
C2, C3 750 pF ATC 700B surface mount ceramic chip capacitor
C4 300 pF ATC 700B surface mount ceramic chip capacitor
C5,C10,C11,C14,C1 10000 pF ATC 200B surface mount ceramic chip capacitor
C6 510 pF ATC 700B surface mount ceramic chip capacitor
C7 300 pF ATC 700B surface mount ceramic chip capacitor
C8 175-680 pF type 46 standard trimmer capacitor
C12 47 µF / 63 V aluminum electrolytic radial lead capacitor
C13 1200 pF ATC 700B surface mount ceramic chip capacitor
C15 100 µF / 63 V aluminum electrolytic radial lead capacitor
R1,R3 1 K Ohm 1 W surface mount chip resistor
R2 560 Ohm 2 W wire-wound axils lead resistor
T1 HF 2-30 MHz surface mount 9:1 transformer
T2 RG - 142B/U 50 Ohm coaxial cable OD = 0.165[4.18] L 15”[381.00] covered
L1 1 3/4 turn air-wound 16 AWG ID = 0.219 [5.56] poly-coated magnet wire
L2 1 3/4 turn air-wound 12 AWG ID = 0.250 [6.34] bus bar wire
RFC1, RFC2 3 turns 14 AWG wire through fair rite toroid
FB1 Surface mount EMI shield bead
FB2 Toroid
PCB Ultralam 2000. 0.030” thk, εr = 2.55, 2 Oz ED Cu both sides
50V
-
BIAS
+
-
+
REF. 1008706A
2. Gap between ground & transmission lines are 0.056[1.42] typ
3. Transmission line are not 1:1 scale
4. Input and output transmission line are 50 Ohms
1. Dimension at component symbol are reference for component placement.
Notes:
SD2933-05 Circuit layout
Doc ID 15816 Rev 2 9/13
6 Circuit layout
Figure 14. 30 MHz test circuit photometer
Figure 15. 30 MHz test circuit
Package mechanical data SD2933-05
10/13 Doc ID 15816 Rev 2
7 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
SD2933-05 Package mechanical data
Doc ID 15816 Rev 2 11/13
Figure 16. Package dimensions
Table 9. M177 (.550 DIA 4/L N/HERM W/FLG) mechanical data
Dim.
mm. Inch
Min Typ Max Min Typ Max
A 5.72 5.97 0.225 0.235
B 6.73 6.96 0.265 0.275
C 21.84 22.10 0.860 0.870
D 28.70 28.96 1.130 1.140
E 13.84 14.10 0.545 0.555
F 0.08 0.18 0.003 0.007
G 2.49 2.74 0.098 0.108
H 3.81 4.32 0.150 0.170
I 7.11 0.280
J 27.43 28.45 1.080 1.120
K 15.88 16.13 0.625 0.635
1011012D
Controlling dimensions: inches
1011012D
Controlling Dimension: Inches
Revision history SD2933-05
12/13 Doc ID 15816 Rev 2
8 Revision history
Table 10. Document revision history
Date Revision Changes
04-Jun-2009 1 First release
08-Jul-2009 2 Updated V(BR)DSS voltage value from 125 V to 130 V on Table 2 on
page 3 and Table 4 on page 4
SD2933-05
Doc ID 15816 Rev 2 13/13
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