FIELD-EFFECT TRANSISTOR, SILICON. N CHANNEL TRANSISTOR A EFFET DE CHAMP, SILICIUM. CANAL N *2N 4220,A *2N 4221,A *2N 4222,A - LF amplification Amplification BF Maximum power dissipation 2k Preferred device Dispositif recommand 05- 3mA 2N 4220, A lpss 2 - 6mA 2N 4221,A 5 -15mA 2N 4222,A 1 - 4mS 2N 4220, A Y215 2 - S5mS 2N 4221, A 2,5- 6mS 2N 4222, A 2N 4220 A F (100 Hz) 5dB max. 2N 4221 A 2N 4222 A Case TO-72 See outlinedrawing CB-4 on last pages Dissipation de puissance maximale Boftier Voir dessin cot CB-4 dernires pages Prot (mw) Bottom view 300 Vue de dessous I \ NM M 200 1 1 N G Js | | NN B 100 t " | i NN 1 Weight : 0,7 g. Connection M is connected to case o 5O 100 150 Tamb!e? Masse La connexion M est relie au boitier ABSOLUTE RATINGS (LIMITING VALUES) T =+25C (Unless otherwise stated) VALEURS LIMITES ABSOLUES DUTILISATION amb (Sauf indications contraires) Drain-source voltage Tension drain-source Vps 30 v Gate-source voltage Tension grille-source Ves 30 Vv Gate-drain voltage Tension grille-drain Vep 30 v Drain current l 15 A Courant de drain D m Gate current Courant de grille lg 10 mA Power dissipation Dissipation de puissance Prot 300 mW Storage temperature min. To 65 C Temprature de stackage max. a +200 THOMSON-CSF 76-47 1/4 DMSION SEMICONDUCTEURS, BE verso 799 2N 4220,A - 2N 4221, A - 2N 4222, A STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tamb = 25C (Unless otherwise stated) (Sauf indications contraires} Test conditions Min. Typ. Max. Conditions de mesure Ving = 0 DS ! Ves =-15V GSS -0,1 nA Total gate leakage current = Courant de fuite total de grille Vos 0 Ves = -15V less -0,1 BA Tamb = 150C Gate-source breakdown voltage Vps = 9 Tension de claquage grille-source lg = 10 pA VipRiGss 30 Vv ; Vie = 15V 2N4220,A! 0,5 3 mA Qrsin caer yes = Inss* [2nazzial 26 | oma 6s 2N4222,A| 5 15 mA _ 2N4220,A -4 v Gate-source cut-off voltage Vos = 15V Tension grille-source de blocage Ip = 0,1nA VGs off oNagaaA 3 y Vie = 18 V DS ip = SOKA Ves 2N4220,A| 0,5 2,5 Vv Gate-source voltage Vos = 15V Vv _ _ Tension grille-source Ip = 200 pA Gs 2N4221,A! 1 5 Vv Vos = 15V Vv | Ip = 500A GS 2N4222,A| 2 6 Vv DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES DYNAMIQUES (pour petits signaux) Vos = 15V Input capacitance = c Capacit dentre Ves = 9 liss 6 pF f = 1MHz R F . Vps = 15 V everse transfer capacitance - Cc Capacit de transfert inverse Ves = 0 12ss 2 pF f = 1MHz F 4 sfer admi Vos = 15V 2N4220,A; 1 4 mS orward transfer admittance = Y Admittance de transfert direct Ves 9 | 21s | 2N4221,A| 2 5 ms f = tkHz 2N4222A| 2,5 6 ms Vps = 15V 2N4220,A 10 us Output admittance = Y Admittance de sortie Ves 0 | 22s | 2N4221,A 20 as f = 1kHz 2N4222,A 40 us Vos = 15V Veg = 0 2N4220 A Noise figure Rg =1 MQ F 2N4221 A 25 dB acteur de bruit f = 100 Hz 2N4222 A Af = 10Hz * Pulsed tps 300 us. 6 < 2% impulsions 2/4 800 2N 4220, A - 2N 4221, A- 2N 4222, A STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES 2N 4220, A Vps=15V t< 300 ps 8 & 2% 0,2 0,4 0,6 08 - Ves lV) (mA) 10 2N 4221, A Vps = 15V tp 30048 js 2% 1 2 -V@gs (V) 2N 4222, A Vps= 15V 3 Vgs (V) 3/4 801 2N 4220, A - 2N 4221, A- 2N 4222, A DYNAMIC CHARACTERISTICS CARACTERISTIQUES DYNAMIQUES |Y1 s| (mS) 6 4 19 3 6 4 2 1071 0 1 2 3 Vesiv) F (a6) Vps = 15 V Veg =0 8 TTI 2N 4220 A 5 2N 4221 AL 2N 4222 A 4 \ \ Y Rg (kQ) 4/4 802