Switching and General Purpose Transistors 2n1131 (siticon) Veco = 20-35V 2N1131 USN/JAN lc = 600 mA 2N1991 f= 120 MHz Typ PNP silicon annular transistors for medium-current switching applications. Collector connected to case CASE 31 (TO-5) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Vos Vde 2N1131 50 2N1991 30 Collector-Emitter Voltage VcEKo Vdc 2N1131 35 2N1991 20 Emitter-Base Voltage Veep Vdc 2N1131, 2N1991 5 Collector-Emitter Voltage VCER Vde (Rhe = 10 Q) 2N1131 50 Collector Current Ic mAdc 2N1131 600 Total Device Dissipation Pp @ 25C Case Temperature Both Types 2 Watts Derating Factor Above 25C 2N1131 13.3 mw/C 2N1991 16.0 mWw/C Total Device Dissipation Pp @ 25C Ambient Temperature Both Types 0.6 Watt Derating Factor Above 25C 2N1131 4.0 mW/C 2N1991 4.8 mWw/C Junction Temperature Ty 9 2N1131 +175 2N1991 +150 Storage Temperature Range T stg C 2N1131 -65 to +300 2Ni991 -65 to +150 8-90