PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C * Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. * Industry standard TO-252AA package * Combines very low VCE(on) with low switching losses VCES = 600V VCE(on) typ. = 1.82V G @VGE = 15V, IC = 12A E N-channel Benefits * Generation 4 IGBTs offer highest efficiency * Optimized for specific application conditions * High power density and current rating D-Pak TO-252AA Absolute Maximum Ratings VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 600 22 12 44 44 20 5.0 66 26 -55 to + 150 V A V mJ W C 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)* Weight Typ. Max. --- --- 0.3 (0.01) 1.9 50 --- Units C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2/22/01 IRG4RC20F Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage 18 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.72 -- 1.82 VCE(ON) Collector-to-Emitter Saturation Voltage -- 2.42 -- 2.04 VGE(th) Gate Threshold Voltage 3.0 -- VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -11 gfe Forward Transconductance 5.2 7.75 -- -- ICES Zero Gate Voltage Collector Current -- -- -- -- IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES V(BR)ECS Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA 2.1 IC = 12A VGE = 15V -- IC = 22A See Fig.2, 5 V -- IC = 12A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 12A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 27 40 IC = 12A 4.8 6.8 nC VCC = 400V See Fig. 8 11.4 17 VGE = 15V 26 -- 24 -- TJ = 25C ns 194 290 IC = 12A, VCC = 480V 226 340 VGE = 15V, RG = 50 0.19 -- Energy losses include "tail" 0.92 -- mJ See Fig. 9, 10, 14 1.11 1.4 25 -- TJ = 150C, 26 -- IC = 12A, VCC = 480V ns 263 -- VGE = 15V, RG = 50 443 -- Energy losses include "tail" 1.89 -- mJ See Fig. 11, 14 7.5 -- nH Measured 5mm from package 540 -- VGE = 0V 37 -- pF VCC = 30V See Fig. 7 7.0 -- = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 50, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4RC20F 30 Load C urren t (A ) For both: Triangular wave: Duty cycle: 50% T J = 125C T sink = 90C Gate drive as specified Power Dissipation = 15W Clamp voltage: 80% of rated 20 Square wave: 60% of rated voltage 10 Ideal diodes A 0 0.1 1 10 100 f, F requency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) TJ = 25C TJ = 150C 10 VGE = 15V 20s PULSE WIDTH A I 1 1 2 V CE 3 4 , Collector-to-Em itter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 5 I C , Collector-to-Emitter Current (A) 100 C, Collector-to-Emitter Current (A) 100 TJ = 150 C 10 TJ = 25 C V CC = 50V 5s PULSE WIDTH 1 6 8 10 12 14 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4RC20F 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 25 20 15 10 5 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 18 A 2.0 IC = 9A IC = 4.5 A 1.0 -60 -40 -20 TC , Case Temperature ( C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC20F 1000 600 VGE , Gate-to-Emitter Voltage (V) 800 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies 400 200 Coes VCC = 400V I C = 12A 15 10 5 Cres 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) 10 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 0.71 I C = 9.0A 0.70 0.68 0.67 0.66 20 30 40 RG , Gate Resistance (Ohm) () Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 15 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.72 10 10 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 5 50 50 RG = 50Ohm VGE = 15V VCC = 480V IC = 24 A IC = 12 A IC = 1 0.1 -60 -40 -20 0 20 40 60 6A 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4RC20F RG TJ VCC 4.0 VGE 100 = 50 50Ohm = 150 C = 480V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 5.0 3.0 2.0 VGE = 20V T J = 125 o C 10 1.0 1 0.0 5 10 15 20 25 SAFE OPERATING AREA 1 10 Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current L 1000 Fig. 12 - Turn-Off SOA D .U .T. VC * 50V 100 VCE , Collector-to-Emitter Voltage (V) I C , Collector Current (A) RL = 0 - 480V 1 00 0V 480V 4 X IC@25C 480F 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V * Driver same type as D.U.T., VC = 480V 6 www.irf.com IRG4RC20F 90 % 10 % VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5 s Eon E o ff E ts = (E o n +E o ff ) D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.09 4) 2 .1 9 (.08 6) 6.73 (.2 65) 6.35 (.2 50) -A1.2 7 (.050 ) 0.8 8 (.035 ) 5.46 (.2 15 ) 5.21 (.2 05 ) 1.14 (.0 45) 0.89 (.0 35) 0.5 8 (.02 3) 0.4 6 (.01 8) 4 6.45 (.2 45 ) 5.68 (.2 24 ) 6.2 2 (.245 ) 5.9 7 (.235 ) 1.02 (.0 40) 1.64 (.0 25) 1 2 1 0.42 (.4 10 ) 9 .4 0 (.37 0) 0.51 (.0 20 ) M IN. -B1.5 2 (.0 60 ) 1.1 5 (.0 45 ) 3X 1 .1 4 (.04 5) 2 X 0 .7 6 (.03 0) 0.8 9 (.035 ) 0.6 4 (.025 ) 0 .25 (.01 0) 2 .28 (.09 0) 4.5 7 (.1 80 ) www.irf.com LEAD ASSIGNMENTS 3 M A M B LE AD A1SS IG N M E NTS - GATE 1 -2 G ATE - COLLECTOR 2 - D RA IN 3 - EMITTER 3 - SO U R C E 4 - COLLECTOR 4 - D RA IN 0 .58 (.0 23) 0 .46 (.0 18) N O TE S: 1 D IM EN S IO N IN G & TO LE R AN C IN G PE R A N SI Y 14 .5M , 1 982 . 2 C O N TR O LLING D IM EN S IO N : INC H . 3 C O N FO R M S TO JED E C O U TLIN E TO -25 2A A. 4 D IM EN S IO N S S H O W N AR E B EF O RE SO L D ER D IP, SO L D ER D IP M AX. +0 .16 (.00 6). 7 IRG4RC20F D-Pak (TO-252AA) Tape & Reel Information TR TRR 1 6.3 ( .641 ) 1 5.7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N TR L 16.3 ( .64 1 ) 15.7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 2/01 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/