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MOS FIELD EFFECT TRANSISTOR
2SK3482
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15064EJ3V0DS00 (3rd edition)
Date Published June 2006 NS CP(K)
Printed in Japan 2001
DESCRIPTION
The 2SK3482 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
R
DS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A)
R
DS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A)
• Low Ciss: Ciss = 3600 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 100 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) ID(DC) ±36 A
Drain Current (Pulse) Note1 ID(pulse) ±100 A
Total Power Dissipation (TC = 25°C) PT 50 W
Total Power Dissipation (TA = 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS 30 A
Single Avalanche Energy Note2 EAS 90 mJ
Notes 1. PW ≤ 10
μ
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3482 TO-251 (MP-3)
2SK3482-Z TO-252 (MP-3Z)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Data Sheet D15064EJ3V0DS
2
2SK3482
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10
μ
A
Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 18 A 12 23 S
Drain to Source On-state Resistance Note RDS(on)1 VGS = 10 V, ID = 18 A 27 33 mΩ
RDS(on)2 VGS = 4.5 V, ID = 18 A 29 39 mΩ
Input Capacitance Ciss VDS = 10 V 3600 pF
Output Capacitance Coss VGS = 0 V 360 pF
Reverse Transfer Capacitance Crss f = 1 MHz 190 pF
Turn-on Delay Time td(on) VDD = 50 V, ID = 18 A 15 ns
Rise Time tr VGS = 10 V 10 ns
Turn-off Delay Time td(off) RG = 0 Ω 68 ns
Fall Time tf 6 ns
Total Gate Charge QG VDD = 80 V 72 nC
Gate to Source Charge QGS VGS = 10 V 10 nC
Gate to Drain Charge QGD ID = 36 A 19 nC
Body Diode Forward Voltage Note VF(S-D) IF = 36 A, VGS = 0 V 1.0 V
Reverse Recovery Time t rr IF = 36 A, VGS = 0 V 70 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
μ
s 180 nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20 → 0 V
PG.
RG = 25 Ω
50 Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50 Ω
D.U.T.
RL
VDD
ID
VDD
IAS VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle ≤ 1%
τ
VGS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
μ
<R>
Data Sheet D15064EJ3V0DS 3
2SK3482
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
PT - Total Power Dissi
p
ation - W
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
T
C - Case Temperature - °C TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
10
1
0.1
100
0.1
1000
1 10 100
T
C
= 25˚C
Single Pulse
1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
= 100 A
I
D(DC)
= 36 A
Power Dissipation
Limited
DC
PW = 10 μs
100 μs
1 ms
10 ms
V
DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10
μ
100
μ
Channel to Ambient
Channel to Case
R
th(ch-A)
= 125˚C/W
R
th(ch-C)
= 2.5˚C/W
PW - Pulse Width - s
Data Sheet D15064EJ3V0DS
4
2SK3482
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0
10
20
30
40
50
60
70
80
90
012345
Pulsed
VGS = 10 V
4.5 V
ID - Drain Current - A
0.01
0.1
1
10
100
012345
VDS = 10 V
Pulsed
TA= 150°
C
75°
C
-25°
C
-40°
C
V
DS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VGS(off) – Gate Cut-off Voltage - V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 0 25 50 75 100 125 150
VSD = 10 V
ID = 1mA
|
y
fs
|
- Forward Transfer Admittance - S
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS= 10V
Pulsed
TA= 150°C
-40°C
25°C
75°C
T
ch - Channel Temperature - °C ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
50
60
70
0.1 1 10 100
10 V
Pulsed
VGS = 4.5V
0
5
10
15
20
25
30
35
40
45
50
0 2 4 6 8 101214161820
Pulsed
ID = 36 A
18 A
7.2 A
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS - Gate to Source Voltage - V
Data Sheet D15064EJ3V0DS 5
2SK3482
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
Pulsed
VGS = 4.5 V
10 V
10
100
1000
10000
0.01 0.1 1 10 100
V GS = 0 V
f = 1 M H z
Ciss
Coss
Crss
RDS(on) - Drain to Source On-state Resistance - mΩ
Tch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
1
10
100
1000
0.1 1 10 100
VDD = 50 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
tr
tf
VDS - Drain to Source Voltage - V
0
10
20
30
40
50
60
70
80
90
100
0 1020304050607080
0
2
4
6
8
10
ID = 36 A
VDS
VGS
VDD = 80 V
50 V
20 V
VGS - Gate to Drain Volta
g
e - V
ID - Drain Current - A QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT
ISD
-
Diode Forward Current
-
A
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5
Pulsed
0 V
VGS = 10 V
trr - Reverse Recovery Time - ns
1
10
100
1000
0.1 1 10 100
di/dt = 100 A /μs
VGS = 0 V
V
SD - Source to Drain Voltage - V IF - Drain Current - A
Data Sheet D15064EJ3V0DS
6
2SK3482
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD SINGLE AVALANCHE ENERGY
DERATING FACTOR
IAS - Single Avalanche Current - A
1
10
100
1000
0.001 0.01 0.1 1 10
VDD = 50 V
VGS = 20 → 0 V
RG = 25 Ω
I
AS
=
30 A
EAS = 90 m J
Energy Derating Factor - %
0
20
40
60
80
100
120
25 50 75 100 125 150
VDD = 50 V
VGS = 20 → 0 V
RG = 25 Ω
IAS ≤ 30 A
L - Inductive Load - mH Starting Tch - Starting Channel Temperature - °C
Data Sheet D15064EJ3V0DS 7
2SK3482
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
213
6.5 ±0.2
5.0 ±0.2
4
1.5 −0.1
+0.2
5.5 ±0.27.0 MIN.
13.7 MIN.
2.32.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6 ±0.2
1.1 ±0.2
0.5 −0.1
+0.2
0.5 −0.1
+0.2
123
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1 0.5 ±0.1
5.6 ±0.3
9.5 ±0.5
2.5 ±0.5
1.0 ±0.5
1.5
−0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
Note
0.4 MIN.
0.5 TYP.
0.15 ±0.15
2.3 ±0.3 2.3 ±0.3
5.5 ±0.2
Note The depth of notch at the top of the fin is from
0 to 0.2 mm.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
<R>
2SK3482
The information in this document is current as of June, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
•
•
•
•
•
•
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
