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DATA SH EET
Product data sheet
Supersedes data of 2001 Feb 20 2004 Dec 09
DISCRETE SEMICONDUCTORS
BST50; BST51; BST52
NPN Darlington transistors
db
ook, halfpage
M3D109
2004 Dec 09 2
NXP Semiconductors Product data sheet
NPN Darlington transistors BST50; BST51; BST52
FEATURES
•High current (max. 0.5 A)
•Low voltage (max. 80 V)
•Integrated diode and resis tor .
APPLICATIONS
•Industrial switching applications such as:
– Print hammer
– Solenoid
– Relay and lamp d riving.
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complements: BST60, BST61 and BST62 .
MARKING
PINNING
TYPE NUMBER MARKING CODE
BST50 AS1
BST51 AS2
BST52 AS3
PIN DESCRIPTION
1emitter
2collector
3base
321
1
2
3
sym080
Fig.1 Simplified outline (SOT89 ) and symbo l .
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BST50 SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads SOT89
BST51
BST52
2004 Dec 09 3
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BST50; BST51; BST52
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BST50 −60 V
BST51 −80 V
BST52 −90 V
VCES collector-emitter voltage VBE = 0 V
BST50 −45 V
BST51 −60 V
BST52 −80 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −1 A
ICM peak collector current −2 A
IBbase current (DC) −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.3 W
Tjjunction temperature −150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 96 K/W
Rth(j-s) thermal resistance from junction to soldering point 16 K/W
2004 Dec 09 4
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BST50; BST51; BST52
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES collector-emitter cut-off current
BST50 VBE = 0 V; VCE = 45 V −−50 nA
BST51 VBE = 0 V; VCE = 60 V −−50 nA
BST52 VBE = 0 V; VCE = 80 V −−50 nA
IEBO emitter-base cu t-off current IC = 0 A; VEB = 4 V −−50 nA
hFE DC current gain VCE = 10 V; note 1; (see Fig.2)
IC = 150 mA 1 000 − −
IC = 500 mA 2 000 − −
VCEsat collector-emitter saturation
voltage IC = 500 mA; IB = 0.5 mA −−1.3 V
IC = 500 mA; IB = 0.5 mA;
Tj = 150 °C−−1.3 V
VBEsat base-emitt er saturation voltage IC = 500 mA; IB = 0.5 mA −−1.9 V
fTtransition freque ncy IC = 500 mA; VCE = 5 V;
f = 100 MHz −200 −MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton turn-on time ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA −400 −ns
toff turn-off time −1 500 −ns
2004 Dec 09 5
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BST50; BST51; BST52
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
5000
1000
2000
3000
4000
MGD838
10−11IC (mA)
hFE
10 102103
VCE = 10 V.
Fig.3 Test circuit for switching times.
an
dbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = −1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
2004 Dec 09 6
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BST50; BST51; BST52
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 04-08-03
06-03-16
wM
e1
e
EHE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
9
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
2004 Dec 09 7
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BST50; BST51; BST52
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/05/pp8 D ate of release: 2004 Dec 09 Document orde r number: 9397 750 13877
