BSV52TR - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 May 07 1999 Apr 15

DISCRETE SEMICONDUCTORS

BSV52

NPN switching transistor

ook, halfpage

M3D088

1999 Apr 15 2

Philips Semiconductors Product speciﬁcation

NPN switching transistor BSV52

FEATURES

•Low current (max. 100 mA)

•Low voltage (max. 12 V).

APPLICATIONS

•High speed saturated switching applications, especially

in portable equipment.

DESCRIPTION

NPN switching transistor in a SOT23 plastic package.

MARKING

Note

1. ∗= p : Made in Hong Kong.

∗= t : Made in Malaysia.

TYPE NUMBER MARKING CODE(1)

BSV52 B2∗

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

MAM255

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCEO collector-emitter voltage open base −12 V

VEBO emitter-base voltage open collector −5V

Ccollector current (DC) −100 mA

ICM peak collector current −200 mA

IBM peak base current −100 mA

Ptot total power dissipation Tamb ≤25 °C−250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

1999 Apr 15 3

Philips Semiconductors Product speciﬁcation

NPN switching transistor BSV52

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =20V −−400 nA

IE= 0; VCB =20V; T

j= 125 °C−−30 µA

IEBO emitter cut-off current IC= 0; VEB =4V −−100 nA

hFE DC current gain VCE =1V

C= 1 mA 25 −−

=10mA 40 −120

IC=50mA 25 −−

CEsat collector-emitter saturation

voltage IC= 10 mA; IB= 300 µA−−300 mV

IC= 10 mA; IB=1mA −−250 mV

IC= 50 mA; IB=5mA −−400 mV

VBEsat base-emitter saturation voltage IC= 10 mA; IB= 1 mA 700 −850 mV

IC= 50 mA; IB=5mA −−1.2 V

Cccollector capacitance IE=i

e= 0; VCB =5V; f=1MHz −−4pF

eemitter capacitance IC=i

c= 0; VEB = 1 V; f = 1 MHz −−4.5 pF

fTtransition frequency IC= 10 mA; VCE = 10 V; f = 100 MHz 400 500 −MHz

Switching times (between 10% and 90% levels); (see Fig.2)

ton turn-on time ICon = 10 mA; IBon = 3 mA;

IBoff =−1.5 mA −−10 ns

tddelay time −−4ns

rrise time −−6ns

off turn-off time −−20 ns

tsstorage time −−10 ns

tffall time −−10 ns

1999 Apr 15 4

Philips Semiconductors Product speciﬁcation

NPN switching transistor BSV52

handbook, full pagewidth

DUT

MLB826

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Fig.2 Test circuit for switching times.

Vi= 0.5 V to 4.2 V; T = 500 µs; tp=10 µs; tr=t

s≤3 ns.

R1 = 56 Ω; R2 = 1 kΩ; RB=1kΩ; RC= 270 Ω.

VBB = 0.2 V; VCC = 2.7 V.

Oscilloscope: input impedance Zi=50Ω.

1999 Apr 15 5

Philips Semiconductors Product speciﬁcation

NPN switching transistor BSV52

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

1999 Apr 15 6

Philips Semiconductors Product speciﬁcation

NPN switching transistor BSV52

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Apr 15 7

Philips Semiconductors Product speciﬁcation

NPN switching transistor BSV52

NOTES

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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 15 Document order number: 9397 750 05645