400V 27A APT4016BVFR 0.16 APT4016SVFR APT4016BVFRG* APT4016SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V (R) BVFR FREDFET TO -2 47 V(R) Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Faster Switching * Avalanche Energy Rated * Lower Leakage * TO-247 or Surface Mount D3Pak D3PAK SVFR D G * Fast Recovery Body Diode S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT4016B_SVFR(G) UNIT 400 Volts Drain-Source Voltage 27 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 280 Watts Linear Derating Factor 2.24 W/C VGSM PD TJ,TSTG 108 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 27 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 400 Volts 27 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 14A) TYP MAX 0.16 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) 250 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 2-2006 BVDSS Characteristic / Test Conditions 050-5634 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT4016B_SVFR(G) Test Conditions Characteristic MIN TYP Ciss Input Capacitance VGS = 0V 3350 Coss Output Capacitance VDS = 25V 510 Crss Reverse Transfer Capacitance f = 1 MHz 200 VGS = 10V 135 VDD = 200V ID = 27A @ 25C 24 60 Turn-on Delay Time VGS = 15V 11 Rise Time VDD = 200V 10 ID = 27A @ 25C 48 RG = 1.6 6 3 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge t d(on) tr t d(off) Turn-off Delay Time tf Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP Continuous Source Current (Body Diode) IS 1 Pulsed Source Current VSD Diode Forward Voltage dv/ Peak Diode Recovery dv/dt dt 27 (Body Diode) ISM 2 MAX 108 (VGS = 0V, IS = -27A) 5 UNIT Amps 1.3 Volts 15 V/ns t rr Reverse Recovery Time (IS = -27A, di/dt = 100A/s) Tj = 25C 250 Tj = 125C 450 Q rr Reverse Recovery Charge (IS = -27A, di/dt = 100A/s) Tj = 25C 1.8 Tj = 125C 6.0 IRRM Peak Recovery Current (IS = -27A, di/dt = 100A/s) Tj = 25C 14 Tj = 125C 24 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.45 RJC Junction to Case RJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 40 D=0.5 0.2 0.1 0.05 Note: 0.02 0.01 0.005 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5634 Rev A 2-2006 0.5 0.05 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.32mH, R = 25, Peak I = 27A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves APT4016B_SVFR(G) 50 50 40 VGS=15V 5.5V 30 5V 20 4.5V 10 ID, DRAIN CURRENT (AMPERES) VGS=10V 40 VGS=7V 5V 20 4.5V 10 4V 0 TJ = +125C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 30 20 10 TJ = +125C TJ = -55C TJ = +25C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 30 24 18 12 6 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.8 1.6 1.4 VGS=10V VGS=20V 1.2 1.0 0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 2.0 1.1 1.0 0.9 10-2005 ID, DRAIN CURRENT (AMPERES) TJ = +25C 40 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS TJ = -55C 5.5V 30 4V 0 50 6V 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5634 Rev A ID, DRAIN CURRENT (AMPERES) VGS=6V, 7V, 10V & 15V APT4016B_SVFR(G) 10,000 10S OPERATION HERE LIMITED BY RDS (ON) 50 100S 5,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 150 100 1mS 10 5 10mS 100mS DC 1 TC =+25C TJ =+150C SINGLE PULSE .5 .1 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I = I [Cont.] D VDS=80V VDS=200V 12 VDS=320V 8 4 0 Coss 500 Crss .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 16 1,000 100 1 5 10 50 100 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D Ciss 0 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 TJ =+150C 50 TJ =+25C 10 5 1 .5 .1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 3 D PAK (SVFR) Package Outline e1 SAC: Tin, Silver, Copper e3 100% Sn 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Drain 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) TO-247 (BVFR) Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 050-5634 Rev A 10-2005 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.