APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 (R) E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. * Low Forward Voltage Drop * High Freq. Switching to 20KHz * RBSOA and SCSOA Rated * Ultra Low Leakage Current C G ISOTOP (R) S OT 22 7 "UL Recognized" file # E145592 C * Ultrafast Soft Recovery Anti-parallel Diode G E MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT40GF120JRDQ2 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage 30 I C1 Continuous Collector Current @ TC = 25C 77 I C2 Continuous Collector Current @ TC = 100C 40 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 150 Switching Safe Operating Area @ TJ = 150C 150A @ 1200V Total Power Dissipation Watts 347 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 5.5 6.5 2.5 3.0 Units 1200 (VCE = VGE, I C = 700A, Tj = 25C) 4.5 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) TYP 3.1 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Volts 0.5 2 Gate-Emitter Leakage Current (VGE = 20V) 5.0 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com mA nA 3-2006 V(BR)CES MIN Rev A Characteristic / Test Conditions 052-6285 Symbol DYNAMIC CHARACTERISTICS Symbol APT40GF120JRDQ2 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf 225 Gate Charge 9.5 VGE = 15V 340 TJ = 150C, R G = 1.0, VGE = 3605 TJ = +25C 2000 24 VCC = 800V 26 Turn-off Delay Time VGE = 15V 300 RG = 1.0 95 3755 I C = 40A Current Fall Time Eoff Turn-off Switching Energy J 3280 Inductive Switching (125C) Current Rise Time Turn-on Switching Energy (Diode) ns 70 RG = 1.0 Turn-on Delay Time Turn-on Switching Energy nC 260 6 Eon2 V A 26 I C = 40A Eon1 pF 150 24 5 UNIT 205 VCC = 800V 4 MAX 30 Inductive Switching (25C) Current Fall Time Turn-off Switching Energy td(off) f = 1 MHz 15V, L = 100H,VCE = 1200V Turn-off Delay Time Eoff tr 385 VGE = 15V Turn-on Switching Energy (Diode) td(on) 3460 VGE = 0V, VCE = 25V I C = 40A Current Rise Time Eon2 TYP Capacitance VCE = 600V Turn-on Delay Time Turn-on Switching Energy MIN 44 55 TJ = +125C ns J 4980 6 2605 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) .36 RJC Junction to Case (DIODE) 1.1 WT VIsolation Package Weight 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6285 Rev A 3-2006 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 TJ = 25C 100 TJ = -55C 80 TJ = 125C 60 40 20 12V 120 11V 100 80 10V 60 9V 40 8V 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25C) 160 120 100 80 60 TJ = 25C 40 TJ = -55C 20 TJ = 125C 0 FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 140 IC, COLLECTOR CURRENT (A) 13V 140 20 0 0 15V 160 J 10 VCE = 960V 8 6 4 2 0 50 IC = 80A 4 3 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 40A IC = 20A 2 1 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature 5 IC = 80A 4 IC = 40A 3 IC = 20A 2 1 0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 120 IC, DC COLLECTOR CURRENT(A) 1.05 (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE 1.15 1.10 100 150 200 250 300 350 400 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 5 VCE = 240V VCE = 600V 12 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 40A C T = 25C 14 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 3-2006 GE 140 Rev A V APT40GF120JRDQ2 180 052-6285 160 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 30 VGE = 15V 25 20 15 10 VCE = 800V 5 TJ = 25C or 125C RG = 1.0 L = 100H 0 VCE = 800V RG = 1.0 L = 100H 100 TJ = 25 or 125C,VGE = 15V 80 60 40 TJ = 125C, VGE = 15V 80 60 TJ = 25C, VGE = 15V 40 20 0 15 25 35 45 55 65 75 85 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current G TJ = 125C 15 10 5 TJ = 25C EOFF, TURN OFF ENERGY LOSS (mJ) 7 = 800V V CE = +15V V GE R = 1.0 20 = 800V V CE = +15V V GE T = 125C J 25 20 15 10 Eoff,80A Eon2,40A Eoff,40A 5 Eoff,20A Eon2,20A 20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 G TJ = 125C 5 4 3 2 TJ = 25C 1 25 Eon2,80A SWITCHING ENERGY LOSSES (mJ) 30 6 65 75 85 15 25 35 45 55 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 15 25 35 45 55 65 75 85 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 35 = 800V V CE = +15V V GE R = 1.0 0 0 0 RG = 1.0, L = 100H, VCE = 800V 100 tf, FALL TIME (ns) tr, RISE TIME (ns) 100 120 RG = 1.0, L = 100H, VCE = 800V 25 EON2, TURN ON ENERGY LOSS (mJ) 200 140 55 56 75 85 25 35 45 5 15 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current SWITCHING ENERGY LOSSES (mJ) VGE =15V,TJ=25C 15 25 35 45 55 65 75 85 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 0 3-2006 VGE =15V,TJ=125C 300 0 20 Rev A 400 15 25 35 45 55 65 75 85 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 120 052-6285 APT40GF120JRDQ2 500 35 = 800V V CE = +15V V GE R = 1.0 Eon2,80A G 20 15 10 Eoff,80A 5 Eon2,40A Eon2,20A Eoff,40A 0 Eoff,20A 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES IC, COLLECTOR CURRENT (A) Cies P C, CAPACITANCE ( F) APT40GF120JRDQ2 160 6,000 1,000 500 Coes 140 120 100 80 60 40 Cres 20 100 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.35 D = 0.9 0.30 0.7 0.25 0.20 0.5 Note: 0.15 0.3 0.10 t1 t2 0.05 0 PDM ZJC, THERMAL IMPEDANCE (C/W) 0.40 t 0.1 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.0158 0.319 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 5 1 T = 125C J T = 75C C D = 50 % V = 800V CE R = 1.0 fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RJC G 10 20 30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 3-2006 0.241 = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max Rev A 0.120 Dissipated Power (Watts) F 10 052-6285 TC (C) ZEXT TJ (C) FMAX, OPERATING FREQUENCY (kHz) 80 APT40GF120JRDQ2 APT30DQ120 Gate Voltage 10% TJ = 125C td(on) tr V CE IC V CC 90% 10% Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage TJ = 125C td(off) Collector Voltage tf 10% 0 Collector Current Switching Energy Rev A 3-2006 Figure 23, Turn-off Switching Waveforms and Definitions 052-6285 5% Collector Voltage A 90% Collector Current TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. APT40GF120JRDQ2 Characteristic / Test Conditions IF(AV) IF(RMS) Maximum Average Forward Current (TC = 89C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 39 Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) IFSM UNIT Amps 210 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Forward Voltage VF MIN TYP IF = 40A 2.85 IF = 80A 3.55 IF = 40A, TJ = 125C 2.05 MAX UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J - 25 trr Reverse Recovery Time - 300 Qrr Reverse Recovery Charge - 360 - 4 - 380 ns - 1700 nC - 8 - 160 ns - 2550 nC - 28 Amps IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A, diF/dt = -200A/s VR = 800V, TC = 125C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 800V, TC = 25C Maximum Reverse Recovery Current trr IRRM IF = 30A, diF/dt = -200A/s IF = 30A, diF/dt = -1000A/s VR = 800V, TC = 125C Maximum Reverse Recovery Current ns nC - - Amps Amps D = 0.9 0.80 0.7 0.60 0.5 0.40 Note: PDM 1.00 0.3 t1 t2 0.20 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TC (C) 0.291 0.468 0.341 Dissipated Power (Watts) 0.00306 0.0463 3-2006 TJ (C) 0.267 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL Rev A 10-5 052-6285 0 0.1 ZEXT ZJC, THERMAL IMPEDANCE (C/W) 1.20 90 400 80 70 TJ = 175C 60 50 TJ = 25C 40 TJ = 125C 30 20 TJ = -55C 10 0 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) T = 125C J V = 800V R 3500 60A 3000 2500 30A 2000 1500 15A 1000 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change Qrr 0 CJ, JUNCTION CAPACITANCE (pF) 3-2006 200 Rev A 150 100 30 T = 125C J V = 800V 60A R 25 20 30A 15 10 15A 5 45 Duty cycle = 0.5 T = 175C 40 J 25 20 15 10 5 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 052-6285 15A 200 30 IRRM 0.2 150 100 50 0 250 35 0.6 0.0 30A 300 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change trr 0.4 350 0 trr 0.8 R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change Qrr 1.0 T = 125C J V = 800V 60A 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 APT40GF120JRDQ2 50 0 4000 trr, REVERSE RECOVERY TIME (ns) 450 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 100 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 Vr diF /dt Adjust +18V APT10078BLL 0V D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 33, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Emitter/Anode 30.1 (1.185) 30.3 (1.193) * Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. 38.0 (1.496) 38.2 (1.504) * Emitter/Anode ISOTOP(R) is a Registered Trademark of SGS Thomson. Collector/Cathode Gate Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3-2006 3.3 (.129) 3.6 (.143) Rev A r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 052-6285 7.8 (.307) 8.2 (.322)