Vishay Siliconix
2N7000KL/BS170KL
Document Number: 72705
S-72202-Rev. B, 22-Oct-07
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
• ESD Protected: 2000 V
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
• Battery Operated Systems
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)V
GS(th) (V) ID (A)
60
2 at VGS = 10 V
1.0 to 2.5
0.47
4 at VGS = 4.5 V 0.33
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
Ordering Information: 2N7000KL-TR1
2N7000KL-TR1-E3 (Lead (Pb)-free)
Device Marking
Front View
“S” 2N
7000KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
Ordering Information: BS170KL-TR1
BS170KL-TR1-E3 (Lead (Pb)-free)
Device Marking
Front View
“S” BS
170KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
D
S
G
100
Notes:
a. Pulse width limited by maximum junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)bTA = 25 °C ID
0.47
A
TA = 70 °C 0.37
Pulsed Drain CurrentaIDM 1.0
Power Dissipation
TA = 25 °C PD
0.8 W
TA = 70 °C 0.51
Maximum Junction-to-Ambient RthJA 158 °C/W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Available
Pb-free
RoHS*
COMPLIANT
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Document Number: 72705
S-72202-Rev. B, 22-Oct-07
Vishay Siliconix
2N7000KL/BS170KL
Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min Typ Max
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 µA 60 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 12.02.5
Gate-Body Leakage IGSS V
DS = 0 V, VGS = ± 10 V ± 1
µA
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V 1
VDS = 60 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentbID(on)
VGS = 10 V, VDS = 7.5 V 0.8 A
VGS = 4.5 V, VDS = 10 V 0.5
Drain-Source On-ResistancebrDS(on)
VGS = 10 V, ID = 0.5 A 1.1 2 Ω
VGS = 4.5 V, ID = 0.2 A 1.6 4
Forward Transconductancebgfs VDS = 10 V, ID = 0.5 A 550 ms
Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.87 1.3 V
Dynamicb
Total Gate Charge QgVDS = 10 V, VGS = 4.5 V
ID ≅ 0.25 A
0.4 0.6 nC
Gate-Source Charge Qgs 0.11
pFGate-Drain Charge Qgd 0.15
Gate Resistance Rg173
Tur n - On T im e td(on)
VDD = 30 V, RL = 150 Ω
ID ≅ 0.2 A, VGEN = 10 V, RG = 10 Ω
3.8 10
ns
tr4.8 15
Turn-Off Time td(off) 12.8 20
tf9.6 15
Output Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
012345
VDS - Drain-to-Source Voltage (V)
-
Drain Current (A)
ID
VGS = 10, 7 V
3 V
5 V
4 V
6 V
Transfer Characteristics
0123456
VGS - Gate-to-Source Voltage (V)
-
Drain Current (A)
ID
TJ = - 55 °C
125 °C
25 °C
1.2
0.9
0.6
0.3
0
Document Number: 72705
S-72202-Rev. B, 22-Oct-07
www.vishay.com
3
Vishay Siliconix
2N7000KL/BS170KL
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.2 0.4 0.6 0.81.0
ID- Drain Current (mA)
VGS = 4.5 V
VGS = 10 V
- On-Resistance (Ω)rDS(on)
0
1
2
3
4
5
6
7
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VDS = 10 V
ID = 250 mA
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
V
GS
1.2 1.5
1
100
1000
0.00 0.3 0.6 0.9
TJ = 25 °C
TJ = 125 °C
VSD - Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
10
TJ = - 55 °C
VGS = 0 V
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
0
8
16
24
32
40
0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Crss
Coss
Ciss
VGS = 0 V
0.0
0.4
0.8
1.2
1.6
2.0
- 50 - 25 0 25 50 75 100 125 150
- Junction Temperature (°C)
VGS = 10 V at 500 mA
VGS = 4.5 V
at 200 mA
rDS(on) - On-Resistance
(Normalized)
TJ
0
1
2
3
4
5
0246810
VGS - Gate-to-Source Voltage (V)
ID = 500 mA
ID = 200 mA
- On-Resistance (Ω)
rDS(on)
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Document Number: 72705
S-72202-Rev. B, 22-Oct-07
Vishay Siliconix
2N7000KL/BS170KL
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72705.
Threshold Voltage Variance Over Temperature
Variance (V)VGS(th)
-0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
TJ- J unction Temperature (°C)
Single Pulse Power, Junction-to-Ambient
0.01
0
1
16
20
100 6000.1
Power (W)
Time (s)
8
12
4
10
TA = 25 °C
Safe Operating Area
10
0.1
0.1 1 10 100
0.001
1
1 ms
- Drain Current (A)ID
0.01 TA = 25 °C
Single Pulse
10 ms
100 ms
DC
IDM Limited
ID(on)
Limited
BVDSS Limited
10 s
1 s
Limited by rDS(on)*
VDS - Drain-to-Source Voltage (V)
* VGS > minimumVGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 00601110-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 350 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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