Discrete POWER & Signal ee FAIRCFILD Technologies SEMICONDUCTOR im NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absol ute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 25 Vv Vcso Collector- Base Voltage 25 Vv VeBo Emitter-Base Voltage 12 Vv Io Collector Current - Continuous 1.2 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. Thermal Characteristics TA = 25C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Characteristic Max Units 2N5306 Pp Total Device Dissipation 625 mW Derate above 25C 5.0 mw/C Rac Thermal Resistance, Junction to Case 83.3 C/W Roa Thermal Resistance, Junction to Ambient 200 C/W 90ESNZ 1997 Fairchild Semiconductor Corporation Electrical Characteristics NPN Darlington Transistor TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vier)cEo Collector-Emitter Breakdown Voltage* | Ic =10 mA, Ip=0 25 Vv Visrycso Collector-Base Breakdown Voltage lo =0.1 pA, Ie = 0 25 Vv Visr)eB0 Emitter-Base Breakdown Voltage le =0.1A, Ip = 0 12 Vv loBo Collector Cutoff Current Vop = 25 V,lE=0 0.1 HA Vos = 25 V, le = 0, Ta= 100 C 20 LA leBo Emitter Cutoff Current Vep=12V, lo =0 0.1 HA ON CHARACTERISTICS* hee DC Current Gain Voe = 5.0 V, lp =2.0mMA 7,000 70,000 Vee = 5.0 V, Ip = 100 mA 20,000 VoEsaty Collector-Emitter Saturation Voltage lg = 200 mA, |p = 0.2 mA 1.4 Vv Vee(saty Base-Emitter Saturation Voltage lp = 200 mA, |p = 0.2 mA 16 Vv Vee(on) Base-Emitter On Voltage lo = 200 MA, Voce = 5.0 V 15 Vv SMALL SIGNAL CHARACTERISTICS Co Collector-Base Capacitance Vop = 10 V, f = 1.0 MHz 10 pF he Small-Signal Current Gain Ilo =2.0 mA, Vce = 5.0 V, f= 1.0 kHz 7,000 le =2.0 mA, Vce = 5.0 V, f= 10 MHz 6.0 *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% 90ESNZ