LS4148/LS4448/LS914B
Taiwan Semiconductor
1 Version:F1610
450mA, 75V Switching Diode
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Compliance to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: QUADRO Mini-MELF(LS34)
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 0.06 (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
450
mA
VRRM
75
V
IFSM
2
A
VF at IF=100mA
1.00
V
TJ MAX
175
°C
Package
LS34
Configuration
Single dice
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
SYMBOL
PART NUMBER
UNIT
VRRM
75
V
IF(AV)
450
mA
IFSM
2
A
TJ
-65 ~ 175
°C
TSTG
-65 ~ 175
°C
THERMAL PERFORMANCE
SYMBOL
LIMIT
UNIT
RӨJA
300
°C/W
LS4148/LS4448/LS914B
Taiwan Semiconductor
2 Version:F1610
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage per diode (1)
LS4448, LS914B
IF = 5.0mA, TJ = 25°C
VF
--
0.72
V
LS4148
IF = 10.0mA, TJ = 25°C
--
1.0
LS4448, LS914B
IF = 100mA, TJ = 25°C
--
1.0
Reverse current @ rated VR per
diode (2)
VR=20V TJ = 25°C
IR
--
25
nA
VR=75V TJ = 25°C
--
5
µA
Junction capacitance
1 MHz, VR=0V
CJ
--
4
ρF
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
LS4148
(Note 1)
L0
G
QUADRO
Mini-MELF
10K / 13" Reel
L1
2.5K / 7" Reel
Notes:
1. Whole series with green compound
EXAMPLE
EXAMPLE P/N
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
LS4148 L0G
LS4148
L0
G
Green compound
LS4148/LS4448/LS914B
Taiwan Semiconductor
3 Version:F1610
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Typical Forward Characteristics
Reverse Current VS. Reverse Voltage
Admissible Power Dissipation Curve
Typical Junction Capacitance
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
T
A
=25oC
0.01
0.1
1
10
100
020 40 60 80 100 120
TA=25oC
0
100
200
300
400
500
600
025 50 75 100 125 150 175 200
0.0
0.3
0.6
0.9
1.2
1.5
0 5 10 15 20 25 30
Reverse Current (uA)
Instantaneous Forward Voltage (V)
Power Dissipation (mW)
Ambient Temperature (oC)
Junction Capacitance (pF)
Reverse Voltage (V)
Reverse Voltage (V)
Instantaneous Forward Current (mA)
LS4148/LS4448/LS914B
Taiwan Semiconductor
4 Version:F1610
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Forward Resistance VS. Forward Current
1
10
100
1000
10000
0.01 0.1 1 10 100
Forward Current (mA)
Dynamic Forward Resistance (Ohm)
LS4148/LS4448/LS914B
Taiwan Semiconductor
5 Version:F1610
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
LS34
DIM.
Unit(mm)
Unit(inch)
Min
Max
Min
Max
A
3.30
3.70
0.130
0.146
B
1.40
1.60
0.055
0.063
C
0.20
0.45
0.008
0.018
D
Typ. 1.80
Typ. 0.071
DIM.
Unit(mm)
Unit(inch)
Typ.
Typ.
A
1.25
0.049
B
2.00
0.079
C
2.50
0.098
D
5.00
0.197
LS4148/LS4448/LS914B
Taiwan Semiconductor
6 Version:F1610
Notice
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