MRT100KP40A - MRT100KP400CA(e3) Available Unidirectional and Bidirectional Transient Voltage Suppressor (TVS) Device Screening in reference to MIL-PRF-19500 available DESCRIPTION These MRT100KP40A - MRT100KP400CA high reliability devices protect against dangerous high-voltage, short term transients such as those caused the the secondary effects of lightning per IEC61000-4-5 (see protection classes below) and RTCA/DO-160. They also protect against voltage spikes caused by inductive load switching, induced RFI, and ESD or EFT per IEC61000-4-2 and IEC61000-4-4. Clamping time is nearly instantaneous at < 5ns. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * * * * * * * * * * Available in both unidirectional and bidirectional configurations Suppresses transients up to 100 kW @ 6.4/69 s Fast response with less than 5 ns turn-on time Preferred 100 kW TVS for aircraft power bus protection 3 lot norm screening performed on standby current I D 100% surge tested devices Multiple screening levels in reference to MIL-PRF-19500 are available. Refer to Hirel NonHermetic Product Portfolio for more details on the screening options. (See part nomenclature for all options.) High reliability controlled devices have wafer fabrication and assembly lot traceability Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B RoHS compliant versions are available Case 5A (DO-204AR) Package APPLICATIONS / BENEFITS * * * Economical TVS series for thru-hole mounting Protection from high power switching transients, induced RF, and lightning threats with comparatively small package size (0.25 inch diameter) Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4 * * Pin injection protection per RTCA/DO-160 up to Level 4 for Waveform 4 (6.4/69 s) on all devices Pin injection protection per RTCA/DO-160 up to Level 5 for Waveform 4 (6.4/69 s) on device types MRT100KP33A or CA up to MRT100KP260A or CA * * Pin injection protection per RTCA/DO-160 up to Level 3 for Waveform 5A (40/120 s) on all devices Pin injection protection per RTCA/DO-160 up to Level 4 for Waveform 5A (40/120 s) on device types MRT100KP33A or CA up to MRT100KP64A or CA * Consult Factory for other voltages with similar Peak Pulse Power (P PP ) capabilities MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com RF01012, Rev. B (9/20/13) (c)2013 Microsemi Corporation Page 1 of 7 MRT100KP40A - MRT100KP400CA(e3) MAXIMUM RATINGS @ 25 C unless otherwise noted Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance, Junction to Lead @ 3/8 inch (10 mm) lead length from body (1) Thermal Resistance, Junction to Ambient (2) Peak Pulse Power Dissipation 6.4/69 s Steady-State Power Dissipation @ TA = 25 C Tclamping (0 volts to V (BR) min, theoretical) Surge Peak Forward Current Solder Temperature @ 10 s (2) Symbol Value TJ and TSTG R JL -65 to +150 17.5 o R JA P PP PD 77.5 100 7 (1) 1.61 < 100 <5 250 260 o Unidirectional Bidirectional I FSM Unit o C C/W C/W kW W ps ns A o C Notes: 1. When mounted on FR4 PC board with 4 mm2 copper pads (1 oz) and track width 1 mm, length 25 mm. 2. At 8.3 ms half-sine wave (unidirectional only). MECHANICAL and PACKAGING * * * * * * * CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable per MIL-STD-750, method 2026. MARKING: Part number POLARITY: Cathode indicated by band. No cathode band on bidirectional devices. TAPE & REEL option: Standard per EIA-296 (add "TR" suffix to part number). Consult factory for quantities. WEIGHT: Approximately 1.7 grams See Package Dimensions on last page. PART NOMENCLATURE M RT 100 K P 40 C A Reliability Level M MA MX MXL (*See Hirel Non-Hermetic Product Portfolio) RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Voltage Tolerance A = 5% tolerance level Blank = 10% tolerance RTCA/DO-160 Rated Polarity C = Bi-directional Blank = Unidirectional Peak Pulse Power Kilowatt Rating Stand-off Voltage Rating (see Electrical Characteristics table) Encapsulated Plastic Package RF01012, Rev. B (9/20/13) (e3) (c)2013 Microsemi Corporation Page 2 of 7 MRT100KP40A - MRT100KP400CA(e3) SYMBOLS & DEFINITIONS Definition Symbol V(BR) VW M PPP V (BR) ID IPP VC I (BR) Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in temperature that caused it expressed in %/C or mV/C. Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of I PP and V C . Breakdown Voltage: The voltage across the device at a specified current I (BR) in the breakdown region. Standby Current: The current through the device at rated stand-off voltage. Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (I PP ) for a specified waveform. Breakdown Current: The current used for measuring Breakdown Voltage V (BR) RF01012, Rev. B (9/20/13) (c)2013 Microsemi Corporation Page 3 of 7 MRT100KP40A - MRT100KP400CA(e3) ELECTRICAL CHARACTERISTICS @ 25 C Part Number Rated Stand-off Voltage Breakdown Voltage V (BR) Volts @ I (BR) VC Maximum Reverse Leakage @ V WM ID Maximum Peak Pulse (2) Current @ 6.4/69 s I PP Maximum V (BR) Temperature Coefficient V(BR) Maximum Clamping (1) @ I PP V WM V (BR) MRT100KP250A MRT100KP260A Volts 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 180 200 220 250 260 Volts 44.4-49.1 47.8-52.8 50.0-55.3 53.3-58.9 56.7-62.7 60.0-66.3 64.4-71.2 66.7-73.7 71.1-78.6 77.8-86.0 83.3-92.1 86.7-95.8 94.4-104 100-111 111-123 122-135 133-147 144-159 167-185 178-197 189-209 200-221 222-245 245-271 278-308 289-320 mA 20 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Volts 78.6 84.5 88.5 94.3 101 106 114 118 126 138 147 153 166 178 197 216 235 254 296 315 334 354 392 434 493 512 Amps 1500 500 150 150 50 25 15 15 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Amps 1273 * 1184 * 1130 * 1061 * 990 * 943 * 878 848 795 725 680 655 602 563 508 463 426 394 338 318 300 283 256 231 203 196 mV/C 46 50 52 56 60 63 68 71 76 83 89 93 102 109 121 133 145 157 183 195 207 219 243 269 306 318 MRT100KP280A MRT100KP300A MRT100KP350A MRT100KP400A 280 300 350 400 311-345 333-369 389-431 444-492 5 5 5 5 552 590 690 787 10 10 10 10 181 170 145 127 344 368 430 490 MRT100KP40A MRT100KP43A MRT100KP45A MRT100KP48A MRT100KP51A MRT100KP54A MRT100KP58A MRT100KP60A MRT100KP64A MRT100KP70A MRT100KP75A MRT100KP78A MRT100KP85A MRT100KP90A MRT100KP100A MRT100KP110A MRT100KP120A MRT100KP130A MRT100KP150A MRT100KP160A MRT100KP170A MRT100KP180A MRT100KP200A MRT100KP220A I (BR) NOTES: 1. Clamping voltage does not include any variable parasitic lead inductance effects observed during the 6.4 s rise time due to lead length. 2. The maximum peak pulse current (I PP ) shown represents the performance capabilities by design. *Surge test screening is only performed up to 900 Amps (test equipment limitations). RF01012, Rev. B (9/20/13) (c)2013 Microsemi Corporation Page 4 of 7 MRT100KP40A - MRT100KP400CA(e3) Peak Pulse Power (PPP) or Continuous Power in % of 25C rating PPP Peak Pulse Power vs. Pulse Time - kW Non-Repetitive Pulse GRAPHS tp - Pulse Time - sec. T L Lead Temperature C FIGURE 1 Peak Pulse Power vs. Pulse Time To 50% of Exponentially Decaying Pulse FIGURE 2 Power Derating NOTE: This P PP versus time graph allows the designer to use these parts over a broad power spectrum using the guidelines illustrated in MicroNote 104 on www.microsemi.com. Aircraft transients are described with exponential decaying waveforms. For suppression of square-wave impulses, derate power and current to 66% of that for the exponential decay shown in Figure 1. CORRECT FIGURE 3 INSTALLATION TVS devices used across power lines are subject to relatively high magnitude surge currents and are more prone to adverse parasitic inductance effects in the mounting leads. Minimizing the shunt path of the lead inductance and their V = -Ldi/dt effects will optimize the TVS effectiveness. Examples of optimum installation and poor installation are illustrated in Figures 3 to 6. Figure 3 illustrates minimal parasitic inductance with attachment at end of device. Inductive voltage drop is across the input leads. Virtually no "overshoot" voltage results as illustrated with Figure 4. The loss of effectiveness in protection caused by excessive parasitic inductance is illustrated in Figures 5 and 6. Also see MicroNote 111 for further information on "Parasitic Lead Inductance in TVS". FIGURE 4 RF01012, Rev. B (9/20/13) INCORRECT FIGURE 5 FIGURE 6 (c)2013 Microsemi Corporation Page 5 of 7 MRT100KP40A - MRT100KP400CA(e3) GRAPHS (continued) FIGURE 7 - Waveform 3 FIGURES 8 - Waveform 4 FIGURE 9 - Waveform 5A NOTE: The 1 MHz damped oscillatory waveform (3) has an effective pulse width of 4 s. Equivalent peak pulse power at each of the pulse widths represented in RTCA/DO-160 for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1 herein as well as MicroNotes 104 and 120 (found on www.microsemi.com) and are listed below. WAVEFORM NUMBER PULSE WIDTH PEAK PULSE POWER Peak Pulse Current Conversion Factor * from Rated IPP at 6.4/69 s 3 4 5A s 4 6.4/69 40/120 kW 340 100 70 3.40x 1.00x 0.70x * Multiply by the conversion factor shown with reference to the maximum rated I PP in the Electrical Characteristics Table on page 2. NOTE 1: High current fast rise-time transients of 250 ns or less can more than triple the V C from parasitic inductance effects (V= -Ldi/dt) compared to the clamping voltage shown in the initial Electrical Characteristics table as also described in Figures 5 and 6 herein. NOTE 2: Also see MicroNotes 127, 130, and 132 on www.microsemi.com for further information on transient voltage suppressors with reference to aircraft industry specification RTCA/DO-160. RF01012, Rev. B (9/20/13) (c)2013 Microsemi Corporation Page 6 of 7 MRT100KP40A - MRT100KP400CA(e3) PACKAGE DIMENSIONS Dim LL BL BD LD RF01012, Rev. B (9/20/13) (c)2013 Microsemi Corporation Dimensions Inch Millimeters Min Max Min Max 0.750 19.05 0.365 0.385 9.27 9.78 0.235 0.255 5.97 6.48 0.047 0.053 1.194 1.346 Page 7 of 7