RF01012, Rev. B (9/20/13) ©2013 Microsemi Corporation Page 1 of 7
MRT100KP40A – MRT100KP400CA(e3)
Available
Unidirectional and Bidirec ti onal Transient
Voltage Suppressor (TVS) Device
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
These MRT100KP40A – MRT100KP400CA high reliability devices protect against dangerous
high-voltage, short term transien ts such as thos e cau sed the th e secondary effects of lightn ing
per I EC61000-4-5 (see protection cl asses b el ow) an d RTCA/ DO-160 . They also pr otec t
against voltage s p
ikes caused by inductive load switching, induced RFI, and ESD or EFT per
IEC61000-4-2 and IEC61000-4-4. Clamping time is nearly instantaneous at < 5ns.
Case 5A
(DO-204AR)
Package
Important: F or the latest information, visit our website http://www.microsemi.com.
FEATURES
• Available in both unidirectional and bidirectional configurations
• Suppresses transients up to 100 kW @ 6.4/69 µs
• F ast respon se with less than 5 ns turn-on time
• Preferred 100 kW TVS for aircraft power bus protection
• 3σ lot norm screening performed on standby current ID
• 100% surge tested devices
• Multiple screening levels in referenc e to MIL-PRF-19500 are available. Refer to Hirel Non-
Hermetic Product Portfolio for more details on the screening options.
(See part nomenclature for all options.)
• High reliability controlled devices have wafer fabrication and assembly lot traceability
• Moisture classifi catio n is level 1 with no dry pack required per IPC/J EDEC J -STD-020B
• RoHS compliant versions are available
APPLICATIONS / BENEF ITS
• Economical TVS series for thru-hole mount ing
• Protection from high power switching transients, induced RF, and lightning threats with
comparatively small package size (0.25 inch diameter)
• Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4
• Pin injection protection per RTCA/DO-160 up to Level 4 for Waveform 4 (6.4/69 μs) on all devices
• Pin injection protection per RTCA/DO-160 up to Level 5 for Waveform 4 (6.4/69 μs) on device types
MRT100KP33A or CA up to MRT100KP260A or CA
• Pin injection protection per RTCA/DO-160 up to Level 3 for Waveform 5A (40/120 μs) on all devices
• Pin injection protection per RTCA/DO-160 up to Level 4 for Waveform 5A (40/120 μs) on device
types MRT100KP33A or CA up to MRT100KP64A or CA
• Consult Factory for other voltages with similar Peak Pulse Power (PPP) capabilities
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01012, Rev. B (9/20/13) ©2013 Microsemi Corporation Page 2 of 7
MRT100KP40A – MRT100KP400CA(e3)
MAXIMUM RATINGS @ 25 ºC unles s otherwise noted
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
T
J
and
TSTG
-65 to +150
oC
Thermal Resistance, Junction to Lead @ 3/8 inch (10 mm)
lead l ength from body
R
ӨJL
17.5
oC/W
Thermal Resistance, Junction to Ambient (1)
RӨJA
77.5
oC/W
Peak Pulse Power Dissipation (2)
6.4/69 µs
PPP
100
kW
Steady-State Power Dissipation @ T
A
= 25 ºC
P
D
7
1.61 (1)
W
Tclamping (0 volts to V(BR)
min, theoretical)
Unidirectional
Bidirectional
< 100
< 5
ps
ns
Surge Peak Forward Current (2)
IFSM
250
A
Solder Temperature @ 10 s
260
oC
Notes: 1. When mounted on FR4 PC board with 4 mm2 copper pads (1 oz) and track width 1 mm, length 25 mm.
2. At 8.3 ms half-sine wave (unidirectional only).
M ECHANICAL and PACK AGING
• CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
• TERMINALS: Tin-lead or RoHS compliant ann ealed matte-tin plating. Solderable per MIL-STD-750, method 2026.
• MARKING: Part number
• POLARITY: Cathode indicated by band. No cathode band on bidirectional devices.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part num ber). Consult factory for quantities.
• WEIGHT: Approximately 1.7 grams
• See Package Dimensions on last page.
PART NOMENCLATURE
M RT 100 K P 40 C A (e3)
Reliability Level
M
MA
MX
MXL
(*See Hirel Non-Hermetic
Product Portfolio)
RTCA/DO-160 Rated
Peak Pulse Power
Kilowatt Rating
Encapsulated Plastic
Package
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Voltage Tolera nce
A = 5% tolerance level
Blank = 10% tolerance
Polarity
C = Bi-directional
Blank = Unidirectional
Stand-off Voltage Rating
(see Electrical Characteristics
table)
RF01012, Rev. B (9/20/13) ©2013 Microsemi Corporation Page 3 of 7
MRT100KP40A – MRT100KP400CA(e3)
SYMBOL S & DEFI NITIONS
Symbol
Definition
αV(BR)
Temperature Coefficient of Break down Voltage: The change in breakdown voltage divided by the change in
temperature that cau sed it expressed in %/°C or mV/°C.
VWM Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
PPP Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse pow er is the m aximum-rated value of the product of IPP and VC.
V(
BR)
Breakdown Voltage: The voltage ac ross the device at a specified current I(BR) in the breakdown region.
I
D
Standby Current: The current through the device at rated stand-off voltage.
IPP Peak Impulse Current: The maximum rated random recurring peak impulse c urrent or nonrepetitive peak im pulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is us ually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
VC
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
I(BR)
Breakdown Current: The current used for measuring Breakdown Voltage V(BR)
RF01012, Rev. B (9/20/13) ©2013 Microsemi Corporation Page 4 of 7
MRT100KP40A – MRT100KP400CA(e3)
ELECT RICAL CHARACT ERISTICS @ 25 ºC
Part
Number
Rated
Stand-off
Voltage
VWM
Breakdown Voltage
V(BR) Volts
@ I(BR)
V(BR) I(BR)
Maximum
Clamping
@ IPP (1)
VC
Maximum
Reverse
Leakage
@ VWM
ID
Maximum
Peak Pulse
Current (2)
@ 6.4/69 µs
IPP
Maximum
V(BR)
Temperature
Coefficient
α
V(BR)
Volts
Volts
mA
Volts
µAmps
Amps
mV/°C
MRT100KP40A
MRT100KP43A
40
43
44.4-49.1
47.8-52.8
20
10
78.6
84.5
1500
500
1273 *
1184 *
46
50
MRT100KP45A
MRT100KP48A
45
48
50.0-55.3
53.3-58.9
5
5
88.5
94.3
150
150
1130 *
1061 *
52
56
MRT100KP51A
MRT100KP54A
51
54
56.7-62.7
60.0-66.3
5
5
101
106
50
25
990 *
943 *
60
63
MRT100KP58A
MRT100KP60A
58
60
64.4-71.2
66.7-73.7
5
5
114
118
15
15
878
848
68
71
MRT100KP64A
MRT100KP70A
64
70
71.1-78.6
77.8-86.0
5
5
126
138
10
10
795
725
76
83
MRT100KP75A
MRT100KP78A
75
78
83.3-92.1
86.7-95.8
5
5
147
153
10
10
680
655
89
93
MRT100KP85A
MRT100KP90A
85
90
94.4-104
100-111
5
5
166
178
10
10
602
563
102
109
MRT100KP100A
MRT100KP110A
100
110
111-123
122-135
5
5
197
216
10
10
508
463
121
133
MRT100KP120A
MRT100KP130A
120
130
133-147
144-159
5
5
235
254
10
10
426
394
145
157
MRT100KP150A
MRT100KP160A
150
160
167-185
178-197
5
5
296
315
10
10
338
318
183
195
MRT100KP170A
MRT100KP180A
170
180
189-209
200-221
5
5
334
354
10
10
300
283
207
219
MRT100KP200A
MRT100KP220A
200
220
222-245
245-271
5
5
392
434
10
10
256
231
243
269
MRT100KP250A
MRT100KP260A
250
260
278-308
289-320
5
5
493
512
10
10
203
196
306
318
MRT100KP280A
MRT100KP300A 280
300 311-345
333-369 5
5 552
590 10
10 181
170 344
368
MRT100KP350A
MRT100KP400A
350
400
389-431
444-492
5
5
690
787
10
10
145
127
430
490
NOTES:
1. Clamping voltage does not include any variable parasitic lead inductance effects observed during the 6.4 µs rise time due
to lead length.
2. The maximum peak pulse current (IPP) show n represents the performance capabilities by design.
*Surge test screening is only perform ed up to 900 Amps (test equipment limitations).
RF01012, Rev. B (9/20/13) ©2013 Microsemi Corporation Page 5 of 7
MRT100KP40A – MRT100KP400CA(e3)
GRAPHS
tp – Pulse Tim e – sec. TL L ead Temper ature °C
FIGURE 1 FIGURE 2
P eak P ulse P ower vs. Puls e Time Power Derating
To 50% of Exponentially Decaying Pulse
NOTE: This PPP versus time graph all ows th e des i gner to use these
parts over a broad power spectrum using the guid elin es illustrated in
MicroNote 1 04 on www.microsemi.com. A ircraft t r ans i ents are descri bed
with exponential d eca ying wa vef or ms. For suppression of square-wave
impuls es, der ate power and current to 6 6% of that for the exponential
decay shown in Figure 1.
CORRECT INSTALLATION INCORRECT
FIGURE 3 FIGURE 5
FIGURE 4 FIGURE 6
Peak Pulse Power (P
PP
) o r
Continuous Power in % of 25°C rating
P
PP
Peak Pulse Power vs. Pulse Time – kW
Non-Repetitiv e Pulse
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effec ts in the
mounting l eads. Minimi zing the shunt path
of the lead inductance and their V =
-
Ldi/dt effects will optimize the TVS
effectiveness. Examples of optimum
installati on and poor installation are
il lustrated in Figures 3 to 6. Figure 3
illu strates mini mal parasit ic indu ctance
with attachm ent at end of device.
Inductive voltage drop is ac
ross the input
leads. Virtually no “overshoot” voltage
results as illustrated with F igure 4. The
loss of effectiveness in protection caused
by excessive parasitic inductance is
il lustrated in Figures 5 and 6. Also see
MicroNote 111
for further informati on on
“Parasitic Lead Inductance in TVS”.
RF01012, Rev. B (9/20/13) ©2013 Microsemi Corporation Page 6 of 7
MRT100KP40A – MRT100KP400CA(e3)
GRAPHS (continued)
FIGURE 7 – Waveform 3 FIG URES 8 – Waveform 4 FIGURE 9 – Waveform 5A
NOTE: The 1 MHz damped oscillatory waveform (3) has an effective pulse width of 4 µs. Eq uivalent p eak pu l se p ower at
each of the pulse widths represented in RTCA/DO-160 for waveforms 3 , 4 and 5A (above) have been d etermined
referencing Figure 1 herein as well as Mic roN otes 104 and 120 ( found on www.microsemi.com) an d are l i sted bel ow.
WAVEFORM
NUMBER
PULSE
WIDTH
µ
s
PEAK
PULSE
POWER
kW
Peak Pulse Current Conversion
Factor
* from Rated IPP at 6.4/69
µs
3
4
340
3.40x
4
6.4/69
100
1.00x
5A
40/120
70
0.70x
* Multipl y by the conversion factor shown with reference to the maximum rated IPP in the Electrical Characteristics Table on page 2.
NOTE 1: High current fas t rise-time transients of 250 ns or less can more than tripl e the VC from parasitic inductance effects
(V= -Ldi/dt) compared to the clamping voltage shown in the init ial Electrical Characteristics table as also des cribed in
Figures 5 and 6 herein.
NOTE 2: Also see MicroNote s 127, 130, and 132 on www.microsemi.com for further information on transient voltage suppressors
with reference to aircraft industry specification RTCA/DO-160.
RF01012, Rev. B (9/20/13) ©2013 Microsemi Corporation Page 7 of 7
MRT100KP40A – MRT100KP400CA(e3)
PACKAGE DIM ENSIONS
Dimensions
Dim
Inch
Millimeters
Min
Max
Min
Max
LL
0.750
-
19.05
-
BL
0.365
0.385
9.27
9.78
BD
0.235
0.255
5.97
6.48
LD
0.047
0.053
1.194
1.346
