MICROSEMI CORP/ WATERTOWN SCRs 1.6 Amp, Planar FEATURES Maximum Gate Trigger Current: 20nA Closely Controlled Gate Trigger Voltage: 44 to .6V Operating Current Range: 2mA to L6A e Voltage Ratings: to 400V Low On-State Voltage Specified for dv/dt and Switching Time ABSOLUTE MAXIMUM RATINGS 50E D MM 9347963 0012532 128 MUNIT 2N5724-2N5728 Ta 5-1 l DESCRIPTION These devices are intended for general purpose usage in Military/aerospace or severe industrial environments. Major design parameters are specified at the temperature extremes, thus permitting worst case design on the basis of guaranteed values. These devices undergo 100% preconditioning, which includes high temperature storage and temperature cycling followed by a fine leak test as a regular part of the manufacturing procedure. The high voltage types of the 2N5724 series are especially useful as pulse modutator switches in low to medium power pulse modulator applications. Specific parameters such as rise time, delay time, holding current, and recovery time can be selected for optimum performance in a pulse modulator circuit. 2N5724 2N5725 2N5726 2N5727 2N5728 Repetitive Peak Off-State Voltage, Voew ~ GOV ow... LV... . 200V... 300V... . .. 400V Repetitive Peak Reverse Voltage, Varu 60V. .. ... . 100V 200v.. 2. 300V... - 400V Non-Repetitive Peak Off-State Voltage, Vosu BOOV oe ceeeeee D.C. On-State Current, |, 75C Ambient 450MA 85C Case ... . we wees 16A.... Repetitive Peak On-State Current, ly 0 ee - . up to 30A . Peak One Cycle Surge (Non-Rep.) On-State Current, bw ce eee . . 1A Peak Gate Current, ley ce eee 250mA . Average Gate Current, Ieavy 2mA . Reverse Gate Current, len 3mA .. 6V Reverse Gate Voltage, Veg Operating and Storage Temperature Range MECHANICAL SPECIFICATIONS 65C to +-150C 2N5724-2N5728 TO-205AD (TO-39) SEMICONDUCTOR PRODUCTS ae UNITRODE 9-18 MICROSEMI CORP/ WATERTOWN SOE b (Mm 9347763 G0%e533 Ob4 MMUNIT 2N5724-2N5728 ELECTRICAL SPECIFICATIONS Test Symbot Min. Typical Max. Units Test Conditions | SUBGROUP 1 = Visual and Mechanical _ _ _ T-25-T1 SUBGROUP 2 (25C TESTS) 7 a Off-State Current low 05 0.1 uA Rex = 1K, Vpay = Rating Reverse Current lean _ 05 01 BA Rex = 1K, Very == Rating Reverse Gate Voltage Vor 5 & _ Vv leg = 0.1mA Gate Trigger Current ler 2 20 uA Res = 10K, Vp = 5V Gate Trigger Voltage Vor 0.44 0.5 0.6 Vv Res = 1002, Vp = 5V On-State Voltage Vy; 23 25 Vv 1, = 5A (pulse test) Holding Current la 0.3 0.8 2.0 mA Rex = 1K, Vp = 5V SUBGROUP 3 (25C TESTS) Off-State Voltage Critical Rate of Rise dv/dt 100 150 Vins Rex = 1K, Vp = 30V Gate Trigger on Pulse Width tag (on) - 0.1 0.5 BS Ig = 10mA, I; = 1A, Vp = 30V Delay Time ty _ 0.1 = BS Ig = 10mA, I; = 1A, Vp = 30V Rise Time t, _ 0.3 _ BS Ig = 10mA, |; = 1A, Vp = 30V Circuit Commutated Turn-off Time 2N5724, 2N5725, 2N5726, 15 30 BS aa _ 2NS727, 2N5728 ty | 3 | 50 | as | = Migs 1A Rex = 1K SUBGROUP 4 (150C TESTS) High Temp. Off-State Current lora _ 50 200 BA Rex = 1K, Vopy = Rating High Temp. Reverse Current term 80 200 BA Rex = 1K; Veeu = Rating. High Temp. Gate Trigger Voltage Ver 0.10 0.15 - v Res = 1002, Vp = 5V High Temp. Holding Current ly 0.10 0.15 mA Rex = 1K, Vp = 5V SUBGROUP 5 (65C TESTS) Low Temp, Gate Trigger Voltage Vor _ 07 0.9 V Res = 1008, Vp = 5V Low Temp. Gate Trigger Current ler 50 125 BA Res = 10K, Vp = 5V Low Temp. Holding Current la - 12 3.0 mA Rex = 1K, Vp = 5V Note 1 See rating curves for full rating information. Note 2 Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a resistor, 1K or smaller, or other adequate gate bias is used. Gate Trigger Current Gate Trigger Voltage 800 14 | g 600 _ 1.2 + L ALL UNITS FIRE 2 ALL UNITS FIRE 2 w a 2 10 & 400 5 o ow 2 8 law lt w . Qo & f 6 Pat May AAT] $ TT t 1 4 + ys a / IT | 7 MN, LL] 2 & . ' 200 > | NO UNITS FIRE 2 . 1 - NO UNITS FIRE 400 0 | 65 25 0 25 50 75 100 125 150 65 25 0 25 50 75 100 125 150 T, JUNCTION TEMPERATURE (C) T, JUNCTION TEMPERATURE (C) UNITRODE SEMICONDUCTOR PRODUCTS 580 PLEASANT STREET WATERTOWN, MA 02172 TEL, (617) 926-0404 FAX (617) 924-1235 9-19 PRINTED INU SA. MICROSENL CORP/ WATERTOUN SOE D i Off-State Current 1000 ray <= yp ----- Il . 100 + - 3 | | x = | B10 uw a fe uw 1.0 1 bE : | ir a : | wo anne f i | I a } _ i : pre i 01 q { 1 1 i i 001 | 25 50 75 100 125 150 T, JUNCTION TEMPERATURE (C) Min, Holding Current 50 20 MIN. I, MIN. HOLDING CURRENT (mA) N 05 65 25 0 25 450 75 100 125)=150 T, JUNCTION TEMPERATURE (C) UNITRODE SEMICONDUCTOR PRODUCTS 580 PLEASANT STREET WATERTOWN, MA 02172 TEL. (617) 926-0404 + FAX (617) 924-1235 9-20 MAX, I, MAX. HOLDING CURRENT (mA) 1, ON-STATE CURRENT (A) 9347963 00b2534 TTO MMUNIT. 2N5724-2N5728 Max. Holding Current 65 25 0 2 50 75 100 125 4150 T, JUNCTION TEMPERATURE (C) On-State Current vs. Voltage mT | || i MIN. wo | 1 | min / ry vA MAX. Wort : i /, / 1 : 5 / i { ' i t , | Qe | / - ob ' ' L 1 4 itt iy 5 ~ : ' | | T,= 25C | 2 +f L | : \ 1 bf a- -| --+. io ! | i op -L 3 1 tt | 05 01 02 05 10 20 5.0 10 20 50 V, ON-STATE VOLTAGE (V) PRINTED INUSA MICROSEMI CORP/ WATERTOWN SOE D Ml F34?4bs 0012535 937 MUNIT Avg. Current vs. Case Temperature P, POWER DISSIPATION 2.0 15 Lo Man 77 AVG. ON-STATE CURRENT (A) 70 80 Ei) T, 100s: 180 120 lisq PEAK SURGE (NON-REP.) ON-STATE CURRENT (A) 10-5 UNITRODE SEMICONDUCTOR PRODUCTS 580 PLEASANT STREET WATERTOWN, MA 02172 TEL, (617) 926-0404 FAX (617) 924-1235 (w) 5 Q Injen AVG. ON-STATE CURRENT (A) 130 Mo (150 nae MAX. CASE TEMPERATURE (C) Surge Current 10* 10% 107 lot 1 SURGE DURATION (s) 9-21 Avg, Current vs, Ambient Temperature P, POWER DISSIPATION (W) 1, 3B 6 4 | 0 25 50 75 T, 100 10 102 103 7-25-11 2N5724-2N5728 2 o 125 150 4 nae ~ MAX. AMBIENT TEMPERATURE (C) PRINTED INUSA