
Io = 200 mA
VR = 30 Volts
RB520S-30
Page 1
QW-BB023
REV:B
A
mA
V
1
200
30
IO
VR
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
OC
OC
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
Mean rectkfying current
DCReverse voltage
Peak forward surge current
Parameter Conditions Symbol Min Typ
Max
Unit
µA
V
1
0.6
IR
VF
Reverse current
Forward voltage
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 10 V
IF = 200 mA
Maximum Ratings (at TA=25°C unless otherwise noted)
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Comchip Technology CO., LTD.
Dimensions in inches and (millimeter)
SOD-523
0.014(0.35)
0.010(0.25)
0.051(1.30)
0.043(1.10)
0.033(0.85)
0.030(0.75)
0.067(1.70)
0.059(1.50)
0.008(0.20)
REF
0.006(0.15)
0.003(0.08)
0.031(0.77)
0.020(0.51)
0.003(0.07)
0.001(0.01)
+
-
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin package.
Majority carrier conduction.
Mechanical data
Case: SOD-523 standard package,
molded plastic.
Terminals: solderable per MIL-STD-750
,method 2026.
Marking code: cathode band & B
Mounting position: Any
Weight: 0.0012 gram(approx.).
Circuit Diagram
RoHS Device
SMD Schottky Barrier Diodes